化学气相沉积法制备吸波型SiCN陶瓷的研究进展
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摘要
化学气相沉积法(chemical vapor deposition,CVD)是近几十年发展起来的制备无机材料的新技术,具有制备温度低、所得材料均匀致密、可实现近尺寸成型等优点,是制备功能材料的常用方法之一。本文综述了几种常见的CVD方法,如常压化学气相沉积(atmospheric pressure chemical vapor deposition,APCVD)、低压化学气相沉积(low pressurechemicalvapordeposition, LPCVD)、等离子体增强化学气相沉积(plasmaenhancedchemicalvapor deposition,PECVD)以及激光辅助化学气相沉积(laser assisted chemical vapor deposition,LACVD);重点阐述了采用LPCVD在较低温度下制备SiCN陶瓷吸波剂的工艺参数,提出了LPCVD是制备新型吸波陶瓷的主要方法。
Chemical vapor deposition(CVD) is a new technology for preparing inorganic materials which possess some advantages,such as lower preparation temperature,uniform and compact microstructure,and near-size molding,so it is one of the common methods to prepare functional ceramics.In the paper,several common chemical vapor deposition methods like atmospheric chemical vapor deposition,low-pressure chemical vapor deposition,plasma-enhanced chemical vapor deposition and laser-assisted chemical vapor deposition are reviewed,because the microstructure and performance of functional ceramics are greatly influenced by their fabrication methods.In addition,the deposition parameters of Si-C-N absorbing ceramics which are deposited at lower temperature by low-pressure chemical vapor deposition are optimized.It is proposed that low-pressure chemical vapor deposition is the main method for preparing the advanced EMW absorbing ceramics.
Chemical vapor deposition(CVD) is a new technology for preparing inorganic materials which possess some advantages,such as lower preparation temperature,uniform and compact microstructure,and near-size molding,so it is one of the common methods to prepare functional ceramics.In the paper,several common chemical vapor deposition methods like atmospheric chemical vapor deposition,low-pressure chemical vapor deposition,plasma-enhanced chemical vapor deposition and laser-assisted chemical vapor deposition are reviewed,because the microstructure and performance of functional ceramics are greatly influenced by their fabrication methods.In addition,the deposition parameters of Si-C-N absorbing ceramics which are deposited at lower temperature by low-pressure chemical vapor deposition are optimized.It is proposed that low-pressure chemical vapor deposition is the main method for preparing the advanced EMW absorbing ceramics.
引文
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[34]TAN Y F,LI L G,ZHANG S B,et al.Study on the granularity effect on electromagnetic wave absorbing properties of Ni-SiC composites[J].International Symposium on Electromagnetic Compatibility,2008.
[35]赵东林,周万城.纳米Si/C/N复相粉体的微波吸收特性[J].复合材料学报,2002,2(19):65-70.(ZHAO D L,ZHOU W C.Microwave absorbing property of nano Si/C/N composite powder[J].Acta Materiae Composite Materials,2002,2(19):65-70.)
[36]马晓康,殷小玮,范晓孟,等.碳化硅陶瓷基复合材料的自愈合及结构吸波一体化研究进展[J].航空材料学报,2018,38(5):1-9.(MA X K,YIN X W,FAN X M,et al.Progress on selfhealing and structure-wave absorbing integration of silicon carbide ceramic matrix composites[J].Journal of Aeronautical Materials,2018,38(5):1-9.)
[37]ZHENG G P,YIN X W,LIU S H,et al.Improved electromagnetic absorbing properties of Si3N4-SiC/SiO2 composite ceramics with multi-shell microstructure[J].Journal of the European Ceramic Society,2013,33(11):2173-2180.
[38]LI M,YIN X W,ZHENG G P,et al.High-temperature dielectric and microwave absorption properties of Si3N4-SiC/SiO2 composite ceramics[J].Journal of Materials Science,2015,50(3):1478-1487.
[39]MORKOC H,STRITE S,GAO G B,et al.Large-bandgap SiC III-V nitride and II-VI ZnSe-based semiconductor device technologies[J].Journal of Applied Physics,1994(76):1363-1384.
[40]CHANG H L,KOU C T.Characteristics of Si-C-N films deposited by microwave plasma CVD on Si wafers with various buffer layer materials[J].Diamond and Related Materials,2001(10):1910-1915.
[41]CHENG W,JIANG J,ZHANG Y,et al.Effect of the deposition conditions on the morphology and bonding structure of Si-C-N films[J].Materials Chemistry and Physics,2004(85):370-376.
[42]HALUSCHKA C,ENGEL C,RIEDEL R.Silicon carbonitride ceramics derived from polysilazanes:part II:investigation of electrical properties[J].Journal of the European Ceramic Society,2000,20:1365-1374.
[43]BENDEDDOUCHE A,BERJOAN R,BECHE E,et al.Structural characterization of amorphous SiCx Ny chemical vapor deposited coatings[J].Journal of Applied Physics,1997,81(9):6147-6154.
[44]YE F,ZHANG L T,YIN X W,et al.SiCN-based composite ceramics fabricated by chemical vapor infiltration with excellent mechanical and electromagnetic properties[J].Materials Letters,2013,111:169-172.
[45]张磊,卓林蓉,汤桂平,等.增材制造超材料及其隐身功能调控的研究进展[J].航空材料学报,2018,38(3):10-19.(ZHANG L,ZHUO L R,TANG G P,et al.Additive manufacture of metamaterials:a review[J].Journal of Aeronautical Materials,2018,38(3):10-19.)
[46]LIU X F,ZHANG L T,LIU Y S,et al.Thermodynamic calculations on the chemical vapor deposition of Si-C-Nfrom the SiCl4-NH3-C3H6-H2-Ar system[J].Ceramics International,2013,39(4):3971-3977.
[47]XUE J M,YIN X W,YE F,et al.Thermodynamic analysis on the codeposition of SiC-Si3N4 composite ceramics by chemical vapor deposition using SiCl4-NH3-CH4-H2-Ar mixture gases[J].Journal of the American Ceramic Society,2013,96(3):979-986.
[48]XUE J M,YIN X W,PAN H X,et al.Crystallization mechanism of CVD Si3N4-SiCN composite ceramics annealed in N2 atmosphere and its excellent EMWabsorption properties[J].Journal of the American Ceramic Society,2016,99(8):2672-2679.
[2]NELSON L S,RICHARDSON N L.Formation of thin rods of pyrolytic carbon by heating with a focused carbon dioxide laser[J].Material Research Bulletin,1972,7:971-976.
[3]ALLEN S D,MOORE D R,LOBKOVSKY E B,et al.High-activity,single-site catalysts for the alternating copolymerization of CO2 and propylene oxide[J].Journal of the American Chemical Society,2002,124(48):14284-14285.
[4]王季陶.非平衡定态相图新概念及其应用-激活低压金刚石气相生长热力学[J].物理,1998(2):77-83.(WANG J T.Thermodynamics of activated low pressure diamond growth from the vapor phase[J].Physics,1998(2):77-83.)
[5]XIE Y P,CHENG L F,LI L J,et al.Fabrication of laminated SiCw/SiC ceramic composites by CVI[J].Journal of the European Ceramic Society,2013,33(10):1701-1706.
[6]刘永胜,成来飞,张立同,等.CVI制备C/Si3N4复合材料及其表征[J].复合材料科学与工程,2008,15(3):207-216.(LIU Y S,CHENG L F,ZHANG L T,et al.Preparation and characterization of C/Si3N4 composites by chemical vapor Infiltration[J].Journal of Inorganic Materials,2008,15(3):207-216.)
[7]FAN X M,YIN X W,CHENG Y,et al.Microstructure and tribological behaviors of C/C-BN composites fabricated by chemical vapor infiltration[J].Ceramics International,2012,38(8):6137-6144.
[8]ZHU Y,CHENG L F,MA B S,et al.New route to synthesize ZrB2 coatings by reactive chemical vapor deposition method using Zr-BCl3-H2-Ar reagents[J].Surface&Coatings Technology,2018,337:209-216.
[9]YE F,ZHANG L T,YIN X W,et al.Fabrication of Si3N4-SiBC composite ceramic and its excellent electromagnetic properties[J].Journal of the European Ceramic Society,2012,32(16):4025-4029.
[10]LIU X F,ZHANG L T,LIU Y S,et al.Microstructure and the dielectric properties of SiCN-Si3N4 ceramics fabricated via LPCVD/CVI[J].Ceramics International,2014,40(3):5097-5102.
[11]LI J P,ZHAO M X,LIU Y S,et al.Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures[J].Materials,2017,10(6):655.
[12]LI Q,YIN X W,FENG L Y.Dielectric properties of Si3N4-SiCN composite ceramics in X-band[J].Ceramics International,2012,7(38):6015-6020.
[13]潘红星.CNWs(CNTs)/Si3N4复相陶瓷的微结构与电磁性能研究[D].西安:西北工业大学,2017.(PAN H X.Microstructure and electromagnetic properties of CNWs(CNTs)/Si3N4 composite ceramics[D].Xi’an:Northwestern Polytechnical University,2017.)
[14]卢国锋,乔生儒.CVI法制备的C/PyC/Si-C-N复合材料弯曲行为研究[J].材料导报,2015,29(24):27-30.(LU G F,QIAO S R.Flexural behaviors of C/PyC/Si-C-N composite fabricated by CVI[J].Materials Reports,2015,29(24):27-30.)
[15]CHENG L F,XU Y D,ZHANG L T,et al.Oxidation and defect control of CVD SiC coating on three-dimensional C/SiC composites[J].Carbon,2002,40(12):2229-2234.
[16]REBILLAT F,GUETTE A,ESPITALIER L,et al.Chemical and mechanical degradation of Hi-nicalon and Hi-nicalon-S fibers under CVD/CVI BN processing conditions[J].Key Engineering Materials,1999,164/165:31-34.
[17]郭德宇.化学气相沉积法制备石墨烯研究[D].沈阳:东北大学,2014.(GUO D Y.Study on preparation of graphene by chemical vapor deposition[D].Shenyang:Northeastern University,2014.)
[18]薛继梅.CVD SiCN陶瓷的生成机理及其电磁性能研究[D].西安:西北工业大学,2013.(XUE J M.Study on formation mechanism and electromagnetic properties of CVD SiCN ceramics[D].Xi’an:Northwestern Polytechnical University,2013.)
[19]ZHU Y,CHENG L F,MA B S,et al.Effect of CVD ZrB2coating thickness on anti-ablation performance of C/SiC composites[J].Ceramics International,2018,44(7):8166-8175.
[20]ZHU Y,CHENG L F,LI M X,et al.The synthesis and characterization of CVD ZrB2 coating from ZrCl4-BCl3-H2-Ar system[J].Ceramics International,2017,44(2):2002-2010.
[21]LI J P,QIN H L,LIU Y S,et al.Effect of the SiCl4 flow rate on SiBN deposition kinetics in SiCl4-BCl3-NH3-H2-Ar environment[J].Materials,2017,10(6):627.
[22]HAN G F,LIU Y S,ZHANG L T,et al.Fabrication and characteristic of Nextel 720 fiber-reinforced silicon nitride matrix composites by chemical vapor infiltration process[J].International Journal of Applied Ceramic Technology,2015,12(3):529-534.
[23]HAN S M,AYDIL E S.Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2from SiH4,O2 and Ar plasma[J].Journal of Vacuum Science&Technology A,1996,14(4):2062-2070.
[24]JEDRZEJOWSKI P,CIZEK J,AMASSIAN A.Mechanical and optical properties of hard Si-C-N coatings prepared by PECVD[J].Thin Solid Films,2004(447/448):201-207.
[25]YE F,SONG Q,ZHANG Z C,et al.Direct growth of edge-rich graphene with tunable dielectric properties in porous Si3N4 ceramic for broadband high-performance microwave absorption[J].Advanced Functional Materials,2018:1707205.
[26]ZHAO D L,LUO F,ZHOU W C.Microstructure and effective modeling of the microwave permittivity of nano SiC(N)composite powder[J].Advanced Materials Research,2006,11/12:141-144.
[27]TING S F,FANG Y K,HSIEH W T,et al.Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemicalvapor deposition[J].Journal of Electronic materials,2002,31(12):1341-1346.
[28]梁彩云,王志江.耐高温吸波材料的研究进展[J].航空材料学报,2018,38(3):1-9.(LIANG C Y,WANG Z J.Research progress of high temperature microwave absorption materials[J].Journal of Aeronautical Materials,2018,38(3):1-9.)
[29]YE F,ZHANG L T,YIN X W,et al.Thermodynamic and kinetic studies on the deposition of silicon carbon nitride from CH3SiCl3-C3H6-NH3-H2-Ar and its excellent electromagnetic absorbing property[J].Journal of Alloys and Compounds,2013,589(15):579-589.
[30]XUE JM,YIN X W,YE F,et al.Thermodynamic analysis on the codeposition of SiC-Si3N4 composite ceramics by chemical vapor deposition using SiCl4-NH3-CH4-H2-Ar mixture gases[J].Journal of American Ceramic Society,2013,96:979-986.
[31]XUE J M,YIN X W,LIU X F,et al.Thermodynamic calculation for the chemical vapor deposition of silicon carbonitride[J].Journal of the European Ceramic Society,2014,34(15):3607-3618.
[32]IVANOV P A,CHELNOKOV V E.Recent developments in SiC single-crystal electronics[J].Semiconductor Science and Technology,1992(7):863-880.
[33]葛凯勇,王群,张晓宁,等.碳化硅吸波性能改进的研究[J].功能材料与器件学报,2002,8(3):263-266.(GE K Y,WANG Q,ZHANG X N,et al.Study on property improvement of SiC wave absorbers[J].Journal of Functional Materials and Devices,2002,8(3):263-266.)
[34]TAN Y F,LI L G,ZHANG S B,et al.Study on the granularity effect on electromagnetic wave absorbing properties of Ni-SiC composites[J].International Symposium on Electromagnetic Compatibility,2008.
[35]赵东林,周万城.纳米Si/C/N复相粉体的微波吸收特性[J].复合材料学报,2002,2(19):65-70.(ZHAO D L,ZHOU W C.Microwave absorbing property of nano Si/C/N composite powder[J].Acta Materiae Composite Materials,2002,2(19):65-70.)
[36]马晓康,殷小玮,范晓孟,等.碳化硅陶瓷基复合材料的自愈合及结构吸波一体化研究进展[J].航空材料学报,2018,38(5):1-9.(MA X K,YIN X W,FAN X M,et al.Progress on selfhealing and structure-wave absorbing integration of silicon carbide ceramic matrix composites[J].Journal of Aeronautical Materials,2018,38(5):1-9.)
[37]ZHENG G P,YIN X W,LIU S H,et al.Improved electromagnetic absorbing properties of Si3N4-SiC/SiO2 composite ceramics with multi-shell microstructure[J].Journal of the European Ceramic Society,2013,33(11):2173-2180.
[38]LI M,YIN X W,ZHENG G P,et al.High-temperature dielectric and microwave absorption properties of Si3N4-SiC/SiO2 composite ceramics[J].Journal of Materials Science,2015,50(3):1478-1487.
[39]MORKOC H,STRITE S,GAO G B,et al.Large-bandgap SiC III-V nitride and II-VI ZnSe-based semiconductor device technologies[J].Journal of Applied Physics,1994(76):1363-1384.
[40]CHANG H L,KOU C T.Characteristics of Si-C-N films deposited by microwave plasma CVD on Si wafers with various buffer layer materials[J].Diamond and Related Materials,2001(10):1910-1915.
[41]CHENG W,JIANG J,ZHANG Y,et al.Effect of the deposition conditions on the morphology and bonding structure of Si-C-N films[J].Materials Chemistry and Physics,2004(85):370-376.
[42]HALUSCHKA C,ENGEL C,RIEDEL R.Silicon carbonitride ceramics derived from polysilazanes:part II:investigation of electrical properties[J].Journal of the European Ceramic Society,2000,20:1365-1374.
[43]BENDEDDOUCHE A,BERJOAN R,BECHE E,et al.Structural characterization of amorphous SiCx Ny chemical vapor deposited coatings[J].Journal of Applied Physics,1997,81(9):6147-6154.
[44]YE F,ZHANG L T,YIN X W,et al.SiCN-based composite ceramics fabricated by chemical vapor infiltration with excellent mechanical and electromagnetic properties[J].Materials Letters,2013,111:169-172.
[45]张磊,卓林蓉,汤桂平,等.增材制造超材料及其隐身功能调控的研究进展[J].航空材料学报,2018,38(3):10-19.(ZHANG L,ZHUO L R,TANG G P,et al.Additive manufacture of metamaterials:a review[J].Journal of Aeronautical Materials,2018,38(3):10-19.)
[46]LIU X F,ZHANG L T,LIU Y S,et al.Thermodynamic calculations on the chemical vapor deposition of Si-C-Nfrom the SiCl4-NH3-C3H6-H2-Ar system[J].Ceramics International,2013,39(4):3971-3977.
[47]XUE J M,YIN X W,YE F,et al.Thermodynamic analysis on the codeposition of SiC-Si3N4 composite ceramics by chemical vapor deposition using SiCl4-NH3-CH4-H2-Ar mixture gases[J].Journal of the American Ceramic Society,2013,96(3):979-986.
[48]XUE J M,YIN X W,PAN H X,et al.Crystallization mechanism of CVD Si3N4-SiCN composite ceramics annealed in N2 atmosphere and its excellent EMWabsorption properties[J].Journal of the American Ceramic Society,2016,99(8):2672-2679.