原料体系对热压烧结制备Ti_3SiC_2材料的影响
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摘要
以Ti/Si/C,Ti/SiC/C和Ti/Si/TiC粉为原料体系,采用真空热压烧结制备纯样Ti_3SiC_2,通过XRD和SEM研究了不同原料体系和烧结温度对试样相组成、致密度及显微结构的影响。研究表明:烧结温度为1550℃时,Ti/Si/TiC体系制备的纯样Ti_3SiC_2主晶相为Ti_3SiC_2,第二相为TiC,Ti_3SiC_2相含量为94%,为各试样中最高,Ti_3SiC_2材料较其他试样致密且Ti_3SiC_2晶粒发育成均匀良好的板状晶粒,粒径约为20μm;制备纯度较高的Ti_3SiC_2材料需要提高Ti/Si/C,Ti/SiC/C原料体系的烧结温度。
The Ti_3SiC_2 ceramic material was synthesized by hot-pressing sintering process with Ti-Si-C,Ti-SiC-C and Ti-Si-TiC systems as raw materials respectively. The effects of raw material system and sintering temperature on the phase constituent,densification and microstructure of samples were studied by XRD and SEM. The results show that when the sintering temperature is 1550 ℃,the phase content of Ti_3SiC_2 reached the highest value of 94 wt% from Ti/Si/TiC systems.The Ti-Si-TiC material is mainly composed of two phases of Ti_3SiC_2 and TiC. Plate-like Ti_3SiC_2 grains are well developed with a particle size of about 20 μm. Increasing the sintering temperature favors the formation of Ti_3SiC_2 in Ti-SiC-C and TiSi-C systems.
The Ti_3SiC_2 ceramic material was synthesized by hot-pressing sintering process with Ti-Si-C,Ti-SiC-C and Ti-Si-TiC systems as raw materials respectively. The effects of raw material system and sintering temperature on the phase constituent,densification and microstructure of samples were studied by XRD and SEM. The results show that when the sintering temperature is 1550 ℃,the phase content of Ti_3SiC_2 reached the highest value of 94 wt% from Ti/Si/TiC systems.The Ti-Si-TiC material is mainly composed of two phases of Ti_3SiC_2 and TiC. Plate-like Ti_3SiC_2 grains are well developed with a particle size of about 20 μm. Increasing the sintering temperature favors the formation of Ti_3SiC_2 in Ti-SiC-C and TiSi-C systems.
引文
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[2]苏伟.放电等离子烧结制备Al/Ti3SiC2复合材料[J].中国陶瓷,2016,52(11):72-79.
[3] Shan Di,Yan Guo.Superconducting Properties of Ti3SiC2-Doped Bulk MgB2 Superconductor[J].Rare Metal Materials and Engineeri ng,2012,41(7):1135-1138.
[4]许小龙,倪东惠,张宝霞,等.烧结温度和复压复烧对温压制备Cu-Ti3SiC2材料的影响[J].粉末冶金材料科学与工程,2014,19(2):197-204.
[5] Zhang Y,Zhou Y C,Li Y Y.Solid Liquid synthesis of Ti3SiC2 particulate by fluctuation procedure[J].Scripta Materialia, 2003,49:249-253.
[6]袁蝴蝶,尹洪峰,陈盼军,等.原料体系对Ti3SiC2合成过程中相组成和显微结构演变的影响[J].陶瓷学报,2012,33(1):11-15.
[7]姜树祥,刘可心,许婉芬.放电等离子烧结制备Ti3SiC2粉体合成的影响导电陶瓷及性能表征[J].中国陶瓷,2016,52(7):71-74.
[8]董洪峰,郭从盛.原料组成对Ti3SiC2粉体合成的影响[J].有色金属工程,2015,5(3):10-14.
[9]张艳丽,徐世帅,刘红燕,等.铝对3Ti/SiC/C体系自蔓延高温合成Ti3SiC2的研究影响[J].中国陶瓷,2015,51(6):26-29.
[10] Hashimoto H,Sun Z M,Inoue Y,et al.Synthesis of Ti3SiC2 from powder blend of Ti,Si and TiC[J].Journal of Alloys and Compounds,2006,426:263-267.