BiAlO_3改性对BF-BT压电陶瓷电性能与温度稳定性的影响
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摘要
采用固相合成法制备了高温钙钛矿结构0.7Bi(Fe1-xAlx)O3-0.3BaTiO3+0.3%MnO2(BFAx-BT)无铅压电陶瓷。研究了BiAlO3改性对该体系陶瓷显微组织、电性能及温度稳定性的影响。结果表明:随BiAlO3含量的增加,陶瓷晶粒尺寸先增加后减小,压电性能的变化规律与晶粒尺寸变化一致,在x=0.01时,压电性能达到最大值d33=134 pC/N,kp=0.28。陶瓷弥散相变特征随BiAlO3含量的增加更加明显,适量BiAlO3添加显著增加了介电性能与压电性能的温度稳定性,特别是kp随温度增加在退极化温度前基本保持不变。
High-temperature perovskite of BFAx-BT lead-free piezoelectric ceramics were prepared by the conventional solid state reaction method.The effect of BiAlO3 modification on microstructure,electrical properties and temperature stability were investigated.The results indicated that,as the BiAlO3 content increasing,the grain size increased first and then decreased,d33 and kp increased initially then reduced.In particular,x=0.01 BFAx-BT ceramics show optimum piezoelectric properties of d33=134 pC/N,kp=0.28.The characteristics of diffusion phase transition were more evident with x.The temperature stability of dielectric and piezoelectric properties of BFAx-BT ceramics was improved by trace BiAlO3 addition.Especially,the kp kept almost constant when temperature below depoling temperature.
High-temperature perovskite of BFAx-BT lead-free piezoelectric ceramics were prepared by the conventional solid state reaction method.The effect of BiAlO3 modification on microstructure,electrical properties and temperature stability were investigated.The results indicated that,as the BiAlO3 content increasing,the grain size increased first and then decreased,d33 and kp increased initially then reduced.In particular,x=0.01 BFAx-BT ceramics show optimum piezoelectric properties of d33=134 pC/N,kp=0.28.The characteristics of diffusion phase transition were more evident with x.The temperature stability of dielectric and piezoelectric properties of BFAx-BT ceramics was improved by trace BiAlO3 addition.Especially,the kp kept almost constant when temperature below depoling temperature.
引文
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[6]Baettig P,Schelle C F,LeSar R et al.Theoretical Prediction of New High-performance Lead-free Piezoelectrics[J].Journal of American ChemicalSociety,2005,17(6):1376-1380.
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[8]Xia F,Yao X.Postsintering Annealing Induced Extrinsic Dielectric and Piezoelectric Responses in Lead-zinc-niobate-based FerroelectricCeramics[J].Journal of Applied Physics,2002,92(5):2709-2716.
[9]Zhou C R,Feteira A,Shan X,et al.Remarkably High-temperature Stable Piezoelectric Properties of Bi(Mg0.5Ti0.5)O3 Modified BiFeO3-BaTiO3 Ceramics[J].Journal of Applied Physics letters,2012,101(3):032901-1-4.
[10]Oh T.Dieelectric Relaxor Properties in the System of(Na1-xKx)1/2Bi1/2TiO3 Ceramics[J].Japanese Journal of Applied Physics,2006,45(6A):5138-5143.
[11]Chen A,Zhi Y.Oxygen-vacancy-related Low Frequency Dielectric Relaxation and Electrical Conduction in Bi:SrTiO3[J].Physical Review B,2000,62(1):228-236.
[12]Setter N,Cross L E.The Role of B-site Cation Disorder in Diffuse Phase Transition Behavior in Ferroelectrics[J].Journal of Applied Physics,1980,51(8):4356-4360.
[13]Robels U,Arlt G.Domain Wall Clamping in Ferroelectrics by Orientation of Defects[J].Journal of Applied Physics,1993,73(7):3454-3460.
[14]Ichiro F,Ryuta M,Kouichi N,et al.Structural,Dielectric,and Piezoelectric Properties of Mn-Doped BaTiO3-Bi(Mg1/2Ti1/2)O3-BiFeO3Ceramics[J].Japanese Journal of Applied Physics,2011,50(9):09ND07-1-4.
[15]Xu F,Trolier-Mckinstry S,Ren W,et al.Domain Wall Motion and Its Contribution to the Dielectric and Piezoelectric Properties of LeadZirconate Titante Films[J].Journal of Applied Physics,2001,89(2):1336-1348.
[16]Cao W W,Randall C A.Grain Size and Domain Size Relations in Bulk Ceramics[J].Journal of Physics and Chemistry of Solids,1996,57(10):1499-1505.