复色光总积分散射测量技术研究
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摘要
目前总积分散射测量装置都是单波长的,不能测量复色光源的总积分散射量。先建立了一个积分球模型,并对这个积分球模型的光源和材料进行仿真分析。光源的分析包括波长和光源面积,材料的分析验证了该积分球模型和设定光路的可行性,并最终根据仿真的结果对实际实验进行有效指导,搭建了一套基于积分球的单波长总散射量测量装置,选取了650 nm、520 nm和450 nm三个波长的半导体激光光源进行实验,得到了多组各个不同波长下的TIS值。通过对实验结果的分析,发现TIS值与波长的平方成反比关系,符合总积分散射理论中TIS与波长的关系。
Total integral scattering measurement devices are single wavelength and the amount of total integralscattering of multi-color light sources can not be measured. An integral sphere model is established, the light sourceand the material of the model are simulated and analyzed. Light source analysis includes wavelength and lightsource area. By analyzing the material of the model, the feasibility of the model and light path is demonstrated. Ac-cording to the final simulation result, the experiment is effectively guided to build a single wavelength total scatter-ing measurement device based on integral sphere. The semiconductor laser light source with 650 nm, 520 nm and450 nm is chosen to obtain groups of total integral scattering(TIS) values in different wavelength. By analyzing ex-perimental results, TIS value is inversely proportional to the square of the wavelength, which accords with the theoryof TIS.
Total integral scattering measurement devices are single wavelength and the amount of total integralscattering of multi-color light sources can not be measured. An integral sphere model is established, the light sourceand the material of the model are simulated and analyzed. Light source analysis includes wavelength and lightsource area. By analyzing the material of the model, the feasibility of the model and light path is demonstrated. Ac-cording to the final simulation result, the experiment is effectively guided to build a single wavelength total scatter-ing measurement device based on integral sphere. The semiconductor laser light source with 650 nm, 520 nm and450 nm is chosen to obtain groups of total integral scattering(TIS) values in different wavelength. By analyzing ex-perimental results, TIS value is inversely proportional to the square of the wavelength, which accords with the theoryof TIS.
引文
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[2]Amra C,Roche P,Pelletier E.Interface roughnesscross-correlation laws deduced from scattering diagrammeasurements on optical multilayers:effect of materialgrain size[J].J Opt Soc Am B,1987,4:1087-1093.
[3]Al Jumaily G A,Mc Nally J J,Mc Neil J R.Effect of ionassisted deposition on optical scatter and surface micro-structure of thin films[J].J Vac Sci Technol,1985.
[4]侯海虹,洪瑞金,张东平,等.测量薄膜微粗糙度的总积分散射仪[J].中国激光,2005,32(9):1258-1261.
[5]申振峰,高劲松,陈红,等.用自制总积分散射仪评估Si C基底表面改性效果[J].光学精密工程,2008,16(10):1841-1846.
[6]于昊.散射法表面粗糙度测量的数学模型分析[J].长春理工大学学报,2006,29(1):109,112.