介质材料厚度对一维光子晶体禁带的影响
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摘要
由Si和SiO2两种介质材料构成一维二元光子晶体,研究了介质材料各层厚度对光子禁带宽度和禁带位置的影响.为了更加接近实际情况,数值模拟中考虑了Si和SiO2折射率随波长的变化及材料的吸收.研究结果表明,在单周期厚度不变时,随着Si和SiO2两种高低折射率介质厚度比值的增加,光子禁带变窄且禁带中心向长波方向移动;在两种介质厚度比值确定时,随着两种介质厚度同步递增,光子禁带展宽的同时禁带中心向长波方向移动.因此,在介质材料确定的前提下,可通过改变介质材料各层的厚度获得所需要的光子禁带.
Numerical simulation about the influence of dielectric layer thickness on the photonic band-gap properties of one-dimension photonic crystal(1D-PC),which was made of alternative Si and SiO2 layers,was performed.According to actual properties of Si and SiO2 layers,the variation of refractive index optical absorption was taken in account.Keeping the single period thickness constant,the photonic band-gap became narrow and shifted to long wavelength region with increase of ratio of Si layer thickness to SiO2 thickness.When the ratio of dielectric layer thickness is constant,increasing two dielectric layer thicknesses simultaneously will result in wider photonic band-gap and shifting to long wavelength region.Based on above results,the desirable photonic band-gap can be obtained by changing the dielectric layer thickness for selected dielectric material.
Numerical simulation about the influence of dielectric layer thickness on the photonic band-gap properties of one-dimension photonic crystal(1D-PC),which was made of alternative Si and SiO2 layers,was performed.According to actual properties of Si and SiO2 layers,the variation of refractive index optical absorption was taken in account.Keeping the single period thickness constant,the photonic band-gap became narrow and shifted to long wavelength region with increase of ratio of Si layer thickness to SiO2 thickness.When the ratio of dielectric layer thickness is constant,increasing two dielectric layer thicknesses simultaneously will result in wider photonic band-gap and shifting to long wavelength region.Based on above results,the desirable photonic band-gap can be obtained by changing the dielectric layer thickness for selected dielectric material.
引文
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5 Tran P.Optical switching with a nonlinear photonic crystal:a numerical study[J].Optics Letters,1996,21(15):1 138-1 140.
6 Cregan R F,Mangan B J,Knight J C,et al.Single-mode photonic band gap guidance of light in air[J].Science,1999,285(3):1 537-1 539.
7 Knight J C,Birks T A,Russell P S J,et al.All-silica single-mode optical fiber with photonic crystal cladding[J].Optics Letters,1996,21(19):1 547-1 549.
8 Scalora M,Bloemer M J,Pethel A S,et al.Transparent,metallo-dielectric,one-dimensional,photonic band-gap structures[J].Journal of Applied Physics,1998,83(5):2 377-2 383.
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11 Springer J,Poruba A,Müllerova L,et al.Absorption loss at nanorough silver back reflector of thin-film silicon solar cells[J].Journal of Applied Physics,2004,95(3):1 427-1 429.
12 Haug F J,S o¨derstr o¨m T,Cubero O,et al.Plasmonic absorption in textured silver back reflectors of thin film solar cells[J].Journal of Applied Physics,2008,104(6):064 509-1-064 509-7.
13 Zeng L,Yi Y,Hong C,et al.Efficiency enhancement in Si solar cells by textured photonic crystal back reflector[J].Applied Physics Letters,2006,89(11):111 111-(1-3).
14 Bermel P,Luo C,Zeng L,et al.Improving thin-film crystalline silicon solar cell efficiencies with photonic crystals[J].Optics Express,2007,15(25):16 986-17 000.
15 Zhou D,Biswas R.Photonic crystal enhanced light-trapping in thin film solar cells[J].Journal of Applied Physics,2008,103(9):093 102-(1-5).
16 顾国昌,李宏强,陈洪涛,等.1维光子晶体中的光学传输特性[J].光学学报,2000,20(6):728-734.
17 陈慰宗,申影,刘军,等.1维光子晶体与光学多层介质膜[J].光子学报,2001,30(9):1 081-1 084.
18 Universitat de Barcelona.NKDGen software[EB/OL].(2000-02-09)[2012-03-30].http://www.ub.edu/optmat/prod0.html.
19 Bosch S,Ferré-Borrull J,Sancho P J.A general-purpose software for optical characterization of thin films:special features for microelectronic applications[J].Solid-State Electronics,2001,45:703-709.
20 张会云,张玉萍,尚廷义,等.含负折射率材料1维3元光子晶体的特性研究[J].光电子·激光,2006,17(5):587-590.
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22 Wang L,Wang Z S,Tian S,et al.Photonic band gap of one-dimensional periodic structure containing dispersive lefthanded metamaterials[J].Chinese Optics Letters,2008,6(3):198-200.