掺磷多晶硅工艺及其腐蚀速率的研究
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摘要
为更好掌握掺磷多晶硅腐蚀速率的变化规律,进而保障和改进MOS晶体管的栅极质量,从直接影响腐蚀速率的关键工步,包括多晶硅掺磷的均匀性及掺磷后表面氧化层处理两个方面入手,对扩散原理、掺杂方式、三氯氧磷热分解过程、掺磷多晶硅等原理进行了阐述,并分析了薄膜质量与各项工艺参数的关系。先通过理论分析,确定在同等工艺条件下,掺磷时间以及掺磷后表面氧化层处理方法是直接影响掺磷多晶硅腐蚀速率的关键工艺,然后在工艺实验中实际监控腐蚀速率的变化,对不同掺磷时间以及掺磷后处理方式的样片进行对比验证,从测试结果中确定最佳工艺条件。本研究可为掺磷多晶硅工艺质量控制方法提供依据。
In order to gain a better grasp of the change rule of the etch rate of phosphorus-doped polysilicon and further guarantee and improve the gate quality of MOS transistors, the diffusion principle,doping method, thermal decomposition process of phosphorus oxychloride, phosphorus-doped polysilicon and other principles are expounded from two aspects that directly affect the etch rate, including the uniformity of phosphorus doping of polysilicon and the treatment of surface oxide layer after phosphorus doping, and the relationship between the film quality and various process parameters is analyzed. Firstly,through theoretical analysis, it is determined that under the same process conditions, the phosphorus doping time and the surface oxidation layer treatment method after phosphorus doping are the key processes that directly affect the etch rate of phosphorus doped polysilicon. Then, the change of etch rate is actually monitored in the process experiment, and the samples of different phosphorus doping time and phosphorus doping post-treatment methods are compared and verified, and the best process conditions are determined from the test results. The study can provide basis for quality control methods of phosphorus doped polysilicon process.
In order to gain a better grasp of the change rule of the etch rate of phosphorus-doped polysilicon and further guarantee and improve the gate quality of MOS transistors, the diffusion principle,doping method, thermal decomposition process of phosphorus oxychloride, phosphorus-doped polysilicon and other principles are expounded from two aspects that directly affect the etch rate, including the uniformity of phosphorus doping of polysilicon and the treatment of surface oxide layer after phosphorus doping, and the relationship between the film quality and various process parameters is analyzed. Firstly,through theoretical analysis, it is determined that under the same process conditions, the phosphorus doping time and the surface oxidation layer treatment method after phosphorus doping are the key processes that directly affect the etch rate of phosphorus doped polysilicon. Then, the change of etch rate is actually monitored in the process experiment, and the samples of different phosphorus doping time and phosphorus doping post-treatment methods are compared and verified, and the best process conditions are determined from the test results. The study can provide basis for quality control methods of phosphorus doped polysilicon process.
引文
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[5]SHAH A V,SCHADE H,VANECEK M,et al.Thin‐film silicon solar cell technology[J].Progress in Photovoltics:Research and Application.2004,12(2/3):113-142.
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