YAG激光频率对a:H-Si薄膜微晶化的影响
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摘要
研究了一种氢化非晶硅(a:H-Si)薄膜微晶化的激光控制工艺方法。在保持脉宽、激光功率和激光光斑大小一致的情况下,分别应用4、8、10、12、15Hz频率YAG激光对a:H-Si/晶体硅(c-Si)结构中的a:H-Si薄膜进行退火处理,探索了YAG激光脉冲频率对a:H-Si薄膜微晶化的影响。用X射线衍射仪(XRD)和原子力显微镜(AFM)对a:H-Si薄膜晶化后的物相结构和表面形貌进行了分析。实验结果表明,随着激光频率从4Hz增加到10Hz,a:H-Si薄膜晶化后的晶粒尺寸变大;随着激光频率从10Hz增加到15Hz,a:H-Si薄膜晶化后的晶粒尺寸逐步变小。脉冲频率为10Hz激光退火后的a:H-Si薄膜的晶化晶粒平均尺寸最大,约45nm。a:H-Si薄膜的表面电阻率随激光频率的增加总体呈下降趋势,晶化后晶粒尺寸最大的a:H-Si薄膜的表面电阻率最低。
The laser-controlled micro-crystallization technology for hydrogenated amorphous silicon a:H-Si thin films is studied.The a:H-Si thin films on crystalline silicon(c-Si) are annealed by YAG laser with the frequencies of 4,8,10,12,15 Hz,while keeping the laser power,pulse width and facula unchanged.The influence of laser frequency on a:H-Si thin film crystallization is studied.The analysis of a:H-Si thin film microstructure and surface morphology is conducted using X-ray diffractometer(XRD) and atomic force microscope(AFM).The results show that the grain size of the a:H-Si thin film becomes larger with the laser frequency increasing from 4 Hz to 10 Hz,and decreases with the laser frequency keeping increasing from 10 Hz to 15 Hz.The maximum average grain size reaches 45 nm in the film annealed by the 10 Hz YAG laser.The sheet resistance of the film generally decreases with the laser frequency in creasing,while the film with the largest grain size obtains the lowest sheet resistance.
The laser-controlled micro-crystallization technology for hydrogenated amorphous silicon a:H-Si thin films is studied.The a:H-Si thin films on crystalline silicon(c-Si) are annealed by YAG laser with the frequencies of 4,8,10,12,15 Hz,while keeping the laser power,pulse width and facula unchanged.The influence of laser frequency on a:H-Si thin film crystallization is studied.The analysis of a:H-Si thin film microstructure and surface morphology is conducted using X-ray diffractometer(XRD) and atomic force microscope(AFM).The results show that the grain size of the a:H-Si thin film becomes larger with the laser frequency increasing from 4 Hz to 10 Hz,and decreases with the laser frequency keeping increasing from 10 Hz to 15 Hz.The maximum average grain size reaches 45 nm in the film annealed by the 10 Hz YAG laser.The sheet resistance of the film generally decreases with the laser frequency in creasing,while the film with the largest grain size obtains the lowest sheet resistance.
引文
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2T.C.Cheng,C.H.Cheng,Z.Z.Huang et al..Development of an energy-saving module via combination of solar cellsand thermoelectric coolers for green building applications[J].Energy,2011,36(1):133～140
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4Wang Xuemeng,Zhao Ruqiang,Shen Hui et al..Laser surface texturation of multicrystalline silicon for solar cell[J].Laser&Optoelectronics Progress,2010,47(1):011401王学孟,赵汝强,沈辉等.用于太阳能电池的多晶硅激光表面织构化研究[J].激光与光电子学进展,2010,47(1):011401
5L.Zhao,C.L.Zhou,H.L.Li et al..Design optimization of bifacial HIT solar cells on p-type silicon substrates bysimulation[J].Solar Energy Materials and Solar Cells,2008,92(6):673～681
6T.Mishima,M.Taguchi,H.Sakata et al..Development status of high-efficiency HIT solar cells[J].Solar EnergyMaterials and Solar Cells,2011,95(1):18～21
7Xiong Shaozhen,Zhu Meifang.Solar Energy Foundation and Application[M].Beijing:Science Press,2009.164～172熊绍珍,朱美芳.太阳能电池基础与应用[M].北京:科学出版社,2009.164～172
8Wu Dingyun,Peng Yufeng,Zhao Jichang et al..Analyses of structure parameters of amorphous silicon film photovoltaiccells[J].Laser&Optoelectronics Progress,2011,48(9):093102吴定允,彭玉峰,赵纪昌等.非晶硅薄膜光伏电池结构参数分析[J].激光与光电子学进展,2011,48(9):093102
9R.Biswas,A.S.Kuar,S.Sarkar et al..A parametric study of pulsed Nd:YAG laser micro-drilling of gamma-titaniumaluminide[J].Opt.Laser Technol.,2010,42(1):23～31
10J.Y.Ding,L.Q.Zhang,Z.F.Zhang et al..Frequency splitting phenomenon of dual transverse modes in a Nd:YAGlaser[J].Opt.Laser Technol.,2010,42(2):341～346
11Yin Xianhua,Zhang Guowen,Zhou Shenlei et al..Criteria study of laser induced damage[J].Laser&OptoelectronicsProgress,2012,49(1):011404尹宪华,张国文,周申蕾等.激光损伤机理判断研究[J].激光与光电子学进展,2012,49(1):011404
12Luo Le,Zhao Shumi,Qiu Jihonget al..Influence of the substrate temperature upon the diamond-like carbon films depositedby pulsed laser[J].Chinese J.Lasers,2010,37(8):2063～2067罗乐,赵树弥,仇冀宏等.衬底温度对脉冲激光沉积类金刚石薄膜的影响[J].中国激光,2010,37(8):2063～2067
13Chen Chuanzhong,Wang Diangang,Xu Ping et al..Microstructure of laser cladding hydroxyapatite bioceramic gradientcoatings[J].Chinese J.Lasers,2004,31(8):1021～1024陈传忠,王佃刚,徐萍等.激光熔覆HA生物陶瓷梯度涂层的微观组织结构[J].中国激光,2004,31(8):1021～1024
14N.C.C.Lu,S.Member,L.Gerzberget al..Modeling and optimization of monolithic polycrystalline silicon resistors[J].IEEE Trans.Electron Devices,1981,28(7):818～830
15Ma Tieying,Li Tie,Liu Wenping et al..Influence of annealing on TCR of phosphor-doped amorphous silicon by PECVD[J].J.Synthetic Crystals,2007,36(2):448～452马铁英,李铁,刘文平等.退火对PECVD制备的掺磷硅薄膜及其电阻温度系数影响的研究[J].人工晶体学报,2007,36(2):448～452