硅中微量硼元素的区熔掺杂
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摘要
以高纯B2O3的水溶液为掺杂剂,采用将掺杂剂逐点滴涂在硅棒表面后再进行区熔的方式,实现了硅材料的微量硼掺杂,研制出了导电类型为p型、电阻率为3 000~5 000Ω·cm的区熔用硅多晶。实验表明,区熔掺杂完成后附加的一次真空区熔过程,使杂质在多晶硅中的分布变得更加均匀。在确定的工艺条件下,由于掺杂前及掺杂后多晶硅轴向电阻率的一致性、实验用多晶硅样本的大小、所需掺杂剂剂量的多少等因素均会影响掺杂的准确性,因此需要在相同条件下进行多次实验,通过积累大量的实验数据以实现准确掺杂。
Using high purity B 2 O 3 aqueous solution as the dopant,adopting the methods of pointdripping the dopant on the surface of silicon rods before zone melting,implementing the trace borondoped silicon material. Polycrystalline silicon was developed which has a conduction type of p-type and a resistivity of 3 0005 000 Ω·cm and can be used for zone-melting. Experimental results show that an additional vacuum zone-melting process after the completion of doping zone melting,can improve the uniformity of impurity distribution in polycrystal. Under certain process conditions,many factors may influence the accuracy of doping,such as the consistency of the axial resistivity in polycrystalline before and after doping,the sample size of the experimental polycrystalline,and the dosage of dopant required, etc. Therefore, repeating experiments under the same doping condition are required. Through the accumulation of large numbers of experimental data,accurate doping would be realized.
Using high purity B 2 O 3 aqueous solution as the dopant,adopting the methods of pointdripping the dopant on the surface of silicon rods before zone melting,implementing the trace borondoped silicon material. Polycrystalline silicon was developed which has a conduction type of p-type and a resistivity of 3 0005 000 Ω·cm and can be used for zone-melting. Experimental results show that an additional vacuum zone-melting process after the completion of doping zone melting,can improve the uniformity of impurity distribution in polycrystal. Under certain process conditions,many factors may influence the accuracy of doping,such as the consistency of the axial resistivity in polycrystalline before and after doping,the sample size of the experimental polycrystalline,and the dosage of dopant required, etc. Therefore, repeating experiments under the same doping condition are required. Through the accumulation of large numbers of experimental data,accurate doping would be realized.
引文
[1]DONALD A N.半导体物理与器件[M].北京:电子工业出版社,2005:442-448.
[2]过惠芬,陈永同,吴道荣.掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程[M].北京:中国标准出版社,1992:4-6.
[3]闫萍,陈立强,张殿朝.高阻真空区熔硅单晶的生长[J].半导体技术,2007,32(4):301-303.
[4]叶良修.半导体物理[M].北京:高等教育出版社,2007:118-125.
[5]杨树人,王宗昌,王兢.半导体材料[M].北京:科学出版社,2004:19-33.
[2]过惠芬,陈永同,吴道荣.掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程[M].北京:中国标准出版社,1992:4-6.
[3]闫萍,陈立强,张殿朝.高阻真空区熔硅单晶的生长[J].半导体技术,2007,32(4):301-303.
[4]叶良修.半导体物理[M].北京:高等教育出版社,2007:118-125.
[5]杨树人,王宗昌,王兢.半导体材料[M].北京:科学出版社,2004:19-33.