Al/CuO肖特基结换能元芯片的非线性电爆换能特性
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摘要
依据肖特基势垒理论,设计并制备了Al/CuO肖特基结换能元芯片。用击穿电压仪研究了换能元芯片的电击穿性能,用电容放电的激发方式研究了芯片的电爆特性。结果表明,对前者,芯片存在发火阈值,具有整流特性,击穿电压与肖特基结的个数无关,击穿电压为8 V;对后者,芯片也存在发火阈值,发火阈值与肖特基结数呈正相关,芯片还具有发火延迟特性。延迟时间的长短与肖特基结数也呈正相关。同时芯片还具有多次激发而连续发火的特性。显示Al/CuO肖特基结换能元芯片是一种具有非线性电爆换能特性的新型电爆换能元。
Al/CuO Schottky junction transduction chip was designed and prepared based on Schottky barrier theory. The electrical initiation performance of the transduction chip was studied by a breakdown voltage instrument. The electrical explosion characteristics of the chips were studied by a capacitance discharge mode of capacitor discharging circuit. Results show that fot the former,the chips exist an ignition threshold and have the haracteristics of rectification. The breakdown voltage has nothing to do with the number of Schottky junction. The breakdown voltage is 8 V. For the latter,the chips also exist the ignition threshold. The ignition threshold increases with increasing the number of Schottky junction. The chips also have the characteristics of delayed discharge. The delayed discharge time prolongs with increasing the number of schottky junction. At the same time,the chips also have the characteristic of continuous firing when stimulating repeatedly,which revealing that the Al/CuO Schottky junction transduction chip is a novel electrical-explosive device with a nonlinear energy conversion characteristic.
Al/CuO Schottky junction transduction chip was designed and prepared based on Schottky barrier theory. The electrical initiation performance of the transduction chip was studied by a breakdown voltage instrument. The electrical explosion characteristics of the chips were studied by a capacitance discharge mode of capacitor discharging circuit. Results show that fot the former,the chips exist an ignition threshold and have the haracteristics of rectification. The breakdown voltage has nothing to do with the number of Schottky junction. The breakdown voltage is 8 V. For the latter,the chips also exist the ignition threshold. The ignition threshold increases with increasing the number of Schottky junction. The chips also have the characteristics of delayed discharge. The delayed discharge time prolongs with increasing the number of schottky junction. At the same time,the chips also have the characteristic of continuous firing when stimulating repeatedly,which revealing that the Al/CuO Schottky junction transduction chip is a novel electrical-explosive device with a nonlinear energy conversion characteristic.
引文
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[7]Jinhee Kwon,Jean Marie Ducere,Pierre Alphonse.Interfacial chemistry in Al/Cu O reactive nanomaterial and its role in exothermic reaction[J].ACS Applied Materials&Interfaces,2013,5(3):605-613.
[8]Zhu Peng,Shen Ruiqi,Ye Yinghua,et al.Dielectric structure pyrotechnic initiator realized by integrating Ti/Cu O-based reactive multilayer films[J].Journal of Applied Physics,2011,109(8):084523.
[9]Zhu Peng,Shen Ruiqi,Ye Yinghua,et al.Energetic igniters realized by integrating Al/Cu O reactive multilayer films with Cr films[J].Journal of Applied Physics,2011,110(7):074513.
[10]Zhu Peng,Shen Ruiqi,Ye Yinghua,et al.Characterization of Al/Cu O nanoenergetic multilayer films integrated with semiconductor bridge for initiator applications[J].Journal of Applied Physics,2013,113(18):184505.
[11]Zhang Kaili,Rossi C,Marine Petrantoni A.Nano initiator realized by integrating Al/Cu O-based nanoenergetic materials with a Au/Pt/Cr microheater[J].Journal of MEMS,2008,17(4):832-836.
[12]施展,杨铭,李桂锋,等.室温制备P型透明导电Cu O:Ni薄膜的研究[J].真空,2009,46(1):13-16.SHI Zhan,YANG Ming,LI Gui-feng,et al.Study on p-type Nickeldoped Cu O transparent conductive films prepared at room temperature[J].Vacuum,2009,46(1):13-16
[13]刘震,吴锋,王芳.反应磁控溅射沉积氧化铜薄膜及其电化学性能研究[J].功能材料,2007,38(7):1149-1151.LIU Zhen,WU Feng,WANG Fang.Electrochemical performance of Cu O thin film deposited by RF reactive magnetron sputtering[J].Functional Materials,2007,38(7):1149-1151
[14]罗德里克E H.金属半导体接触[M].北京:科学出版社,1977:56.
[15]Robert FPierret.半导体器件基础[M].北京:电子工业出版社,2010:72-78
[16]季振国.半导体物理[M].杭州:浙江大学出版社,2005:112-116.
[17]叶良修.半导体物理学(上册)[M].北京:高等教育出版社,2007:208.
[18]Koffyberg F P,Enko F A B.A photoelectrochemical determination of the position of theconduction andvalence band edges of p-type Cu O[J].Journal of Applied Physics,1982,53(2):1173-1177.