溅射ZnO薄膜钝化GaAs表面性能的研究
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摘要
为了改善GaAs(110)与自身氧化物界面由于高表面态密度而引起的费米能级钉扎(pinning)问题,提出采用射频磁控溅射技术在GaAs(110)衬底上沉积一定厚度ZnO薄膜作为钝化层,并利用光致发光(PL)光谱和X射线光电子能谱(XPS)等方法对ZnO薄膜的光学特性及钝化性能进行表征。实验结果表明,经ZnO薄膜钝化后的GaAs样品,其本征PL峰强度提高112.5%,杂质峰强度下降82.4%。XPS光谱分析表明,Ga和As原子的比值从1.47降低到0.94,ZnO钝化层能够抑制Ga和As的氧化物形成。因此,在GaAs表面沉积ZnO薄膜是一种可行的GaAs表面钝化方法。
Surface passivation of GaAs semiconductor materials has been studied to improve surface stability.An ultra-thin(~8nm)passivation layer of ZnO on GaAs was prepared by RF deposition method to control the interface trap densities and to prevent the Feimi level pinning.The optical and passivation performance of ZnO film has been investigated by photoluminescence(PL)and X-ray photoelectron spectroscopy(XPS).An increase in intrinsic PL intensity up to 112.5%and a decrease in impurity PL intensity down to 82.4%are observed after depositing ZnO films compared with unpassivated GaAs surface.XPS measurement results show that the atomic concentration ratio of Ga/As(originally~1.47) has been modified to a value of~0.94,indicating an improvement of the surface stoichiometry in GaAs,Ga-O,As-O bonding is found to get effectively suppressed in RF deposited ZnO/GaAs interface structures.Passivation enhancement mechanism is also discussed.Research results indicate that an ultra-thin ZnO film deposited on the GaAs surface is a feasible choice for GaAs surface passivation.
Surface passivation of GaAs semiconductor materials has been studied to improve surface stability.An ultra-thin(~8nm)passivation layer of ZnO on GaAs was prepared by RF deposition method to control the interface trap densities and to prevent the Feimi level pinning.The optical and passivation performance of ZnO film has been investigated by photoluminescence(PL)and X-ray photoelectron spectroscopy(XPS).An increase in intrinsic PL intensity up to 112.5%and a decrease in impurity PL intensity down to 82.4%are observed after depositing ZnO films compared with unpassivated GaAs surface.XPS measurement results show that the atomic concentration ratio of Ga/As(originally~1.47) has been modified to a value of~0.94,indicating an improvement of the surface stoichiometry in GaAs,Ga-O,As-O bonding is found to get effectively suppressed in RF deposited ZnO/GaAs interface structures.Passivation enhancement mechanism is also discussed.Research results indicate that an ultra-thin ZnO film deposited on the GaAs surface is a feasible choice for GaAs surface passivation.
引文
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[3]LIU Chun-xu,WANG Peng-cheng,LUO Yong-shi,et al.Tb3+-Er3+couples as spectral converters in NaYF4for GaAs solar cells[J].Chinese Journal of Luminescence,2011,32(11):1120-1125.刘春旭,王鹏程,骆永石,等.用于GaAs太阳能电池的NaYF4中Tb3+-Er3+耦合对的光谱转换[J].发光学报,2011,32(11):1120-1125.
[4]Sergey Vainshtein,Valeri Javadyan,Duan Guoyong,et al.Chalcogenide glass surface passivation of a GaAs bipolar transistor for unique avalanche terahertz emitters and picosecond switches[J].Appl.Phys.Lett.,2012,100(7):073505.
[5]WU Yi-bin,YANG Rui-xia,YANG Ke-wu,et al.Design and fabrication of GaAs-based RTD based on coherent resonant tunneling theory[J].Journal of Optoelectronics·Laser,2011,22(2):189-192.武一宾,杨瑞霞,杨克武,等.基于共振隧穿理论的GaAs基RTD的设计与研制[J].光电子·激光,2011,22(2):189-192.
[6]FENG Zhong-wei,ZHANG Li,JIANG Qin,et al.Research on the data acquisition for the FBG sensing system based on InGaAs detector[J].Journal of Optoelectronics·Laser,2011,22(9):1322-1325.冯忠伟,张力,江琴,等.基于InGaAs探测器的FBG传感系统数据采集研究[J].光电子·激光,2011,22(9):1322-1325.
[7]Goutam K D,Yi T,Wei Y L,et al.Impact of interfacial layer control using Gd2O3in HfO2gate dielectric on GaAs[J].Appl.Phys.Lett.,2007,90(18):183510.
[8]Shahrjerdi D,Oye M M,Holmes A L,et al.Unpinned metal gate/high-k GaAs capacitors:Fabrication and characterization[J].Appl.Phys.Lett,2006,89(4):043501.
[9]Koveshnikov S,Tsai W,Ok I,et al.Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer[J].Appl.Phys.Lett.,2006,88(2):022106.
[10]Shahrjerdi D,Tutuc E,Banerjee S K.Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3gate dielectric[J].Appl.Phys.Lett.,2007,91(6):063501.
[11]Moriizumi T,Takahashi K.Si-and Ge-doped GaAs p-n junctions[J].Jpn.J.Appl.Phys.,1969,8(3):348-357.
[12]ZHOU Zhi-wen,LI Cheng,YU Jin-zhong.Detection and analysis of residual strain of epitaxial Ge films on Si substrates[J].Journal of Optoelectronics·Laser,2012,23(9):1749-1753.周志文,李成,余金中.Si基外延Ge薄膜中残余应变的检测与分析[J].光电子·激光,2012,23(9):1749-1753.
[13]Souvik K,Shripathi T,Banerji P.Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2-GaAs metal-oxide-semiconductor devices[J].Solid State Communications.2011,151(24):1881-1884.
[14]Souvik Kundu,Yelagam Anitha.Interface studies on highk/GaAs MOS capacitors by deep level transient spectroscopy[J].Journal of Vacuum Science&Technology B:Microelectronics and Nanometer Structures,2012,30(5):051206.
[15]YANG Yi-fa,JIANG Chao.Properties of femtosecond laser deposited ZnO large-area uniform films on Si substrates[J].Journal of Optoelectronics·Laser,2012,23(12):2349-2354.杨义发,江超.飞秒激光沉积ZnO/Si大面积均匀薄膜及其特性[J].光电子·激光,2012,23(12):2349-2354.
[16]Ki C P,Dae Y M,Kun H K.The physical properties of Aldoped zinc oxide films prepared by RF magnetron sputtering[J].Thin Solid Films,1997,305(1-2):201-209.
[17]WANG En ge.Surface relaxation and its influence on the Fermi level pinning of Zn/GaAs(110)[J].Acta Physica Sinica,1997,46(1):117-122.王恩哥.Zn/GaAs(110)系统的表面弛豫及其对费米能级钉扎的影响[J].物理学报,1997,46(1):117-122.
[18]Lu H L,Sun L,Ding S J,et al.Characterization of atomiclayer-deposited Al2O3/GaAs interface improved by NH3plasma pretreatment[J].Appl.Phys.Lett.,2006,89(15):152910.
[19]Wagner C D,Riggs W M,Davis L E,et al.Handbook of Xray Photoelectron Spectroscopy[M].Perkin-Elmer:Perkin-Elmer Corporation,1979,1-190.