工艺参数对飞秒激光沉积硅基ZnO大面积均匀薄膜性能的影响
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摘要
研究了衬底温度、真空度、激光能量、激光脉冲频率及退火处理对飞秒激光制备硅基ZnO大面积均匀薄膜的结构和性能的影响。结果表明,当激光能量为1.5 mJ、脉冲频率为400 Hz、真空度为1.0 mPa、衬底温度为80℃时,所制备的薄膜质量最佳。薄膜呈高度c-轴取向,为典型的六方纤锌矿结构,晶粒沿垂直于衬底表面的方向生长;当衬底温度高于80℃时,随着温度的升高,c-轴取向度降低。80℃制备的薄膜在可见紫外区域透过率达98%,电阻率随温度升高而减小,退火后薄膜的透过率增大、电阻率升高。
The effects of experimental parameters such as substrate temperature,pressure of oxygen,laser intensity,laser pulse frequency and annealing treatment on the structure and properties of large area uniformity ZnO thin films by femtosecond laser deposition were studied. The results show that c-axisoriented ZnO films are obtained,and the optimized condition are the substrate temperature 80 ℃,laser energy 1. 5 mJ,the pressure of oxygen 1. 0 mPa and the frequency of laser pulse at 400 Hz,respectively. The grains grow perpendicular to the substrate surface with hexagonal phase structure. When the substrate temperature exceed 80 ℃,the c-axis degree of orientation decreases as the temperature increasing. The transmittance of thin film prepared at 80 ℃ reached 98%,the resistivity decreased as the temperature increasing,the transmittance and resistivity of the thin film both increases after annealing.
The effects of experimental parameters such as substrate temperature,pressure of oxygen,laser intensity,laser pulse frequency and annealing treatment on the structure and properties of large area uniformity ZnO thin films by femtosecond laser deposition were studied. The results show that c-axisoriented ZnO films are obtained,and the optimized condition are the substrate temperature 80 ℃,laser energy 1. 5 mJ,the pressure of oxygen 1. 0 mPa and the frequency of laser pulse at 400 Hz,respectively. The grains grow perpendicular to the substrate surface with hexagonal phase structure. When the substrate temperature exceed 80 ℃,the c-axis degree of orientation decreases as the temperature increasing. The transmittance of thin film prepared at 80 ℃ reached 98%,the resistivity decreased as the temperature increasing,the transmittance and resistivity of the thin film both increases after annealing.
引文
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[3]朱慧群,李毅,丁瑞钦,等.p-ZnO薄膜及其异质结的光电性质[J].人工晶体学报,2012,41(3):636-641.Zhu H Q,Li Y,Ding R Q,et al.Optical and Electrical Properties of p-type ZnO Thin Films and Heter-junctions[J].Journal of Synthetic Crystals,2012,41(3):636-641(in Chinese).
[4]王礼慧,张灿云,徐家跃,等.超声喷雾热解法制备稀磁掺杂ZnO薄膜的研究[J].人工晶体学报,2013,42(4):659-663.Wang L H,Zhang C Y,Xu J Y,et al.Preparation of Liluted Magnetic ZnO Films by Ultrasonic Spray Pyrolysis[J].Journal of Synthetic Crystals,2013,42(4):659-663.
[5]张瀚铭,方庆清,王伟娜,等.Cu掺杂对ZnO基薄膜光学及磁学性能影响[J].人工晶体学报,2012,41(2):414-418.Zhang H M,Fang Q Q,Wang W N,et al.Optical and Magnetic Properties of Cu Doped ZnO-based Thin Films[J].Journal of Synthetic Crystals,2012,41(2):414-418(in Chinese).
[6]Esmaili S S,Berkovich A,Iliadis A A.Observation of Conductivity Type Conversion in Undoped ZnO Films Grown by Pulsed Laser Deposition on Silicon(100)Substrates[J].Applied Physics Letters,2012,100(5):053505 1-4.
[7]Yang Y F,Long H,Yang G,et al.Femtosecond Laser Deposited Zinc Oxide Film and Its Optical Properties[J].Vacuum,2009,83:892-896.
[8]Achkar A,Jedrzejowski P,Pignolet A,et al.Porous and Dense ZnO Films Produced by Femtosecond and Picosecond Pulsed Laser Deposition[J].Journal of Optoelectronics and Advanced Materials,2010,12(3):646-650.
[9]Zhang Y D,Russo T E,Mao S S.Femtosecond Laser Assisted Growth of ZnO Nanowires[J].Appl.Phys.Lett.,2005,87:1331151-3.
[10]Chau J L,Yang M C,Nakamura T,et al.Fabrication of ZnO Thin Films by Femtosecond Pulsed Laser Deposition[J].Optics and Laser Technology,201011,42(8):1337-1339.
[11]Liang W W,Chen F,Bian H,et al.Periodic Surface Nanostructures on Polycrystalline ZnO Induced by Femtosecond Laser Pulses[J].Optics Communications,2010,283(11):2385-2389.
[12]Joseph L H,Yang M C,Takahiro N,et al.Fabrication of ZnO Thin Films by Femtosecond Pulsed Laser Deposition[J].Optics&Laser Technology,2010,42(8):1337-1339.
[13]杨义发,江超.飞秒激光沉积ZnO/Si大面积均匀薄膜及其特性[J].光电子·激光,2012,23(12):2349-2354.Yang Y F,Jiang C.Properties of Femtosecond Laser Deposited ZnO Large-area Uniform Films on Si Substrate[J].Journal of Optoelectronics·Laser,2012,23(12):2349-2354(in Chinese).