制备工艺条件对SiO_2薄膜非均质特性的影响
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摘要
薄膜材料的生长过程随镀膜机尺寸的增大而呈现新的规律,为制备膜层均匀性好、材料均质的大尺寸光学元件,分别在不同离子源能量、沉积压强、基板加热温度及基板转速条件下,采用离子辅助电子束蒸发方法制备了不同单层Si O2薄膜样品;利用分光光度计及椭偏仪分别对样品的透过率及椭偏参数进行测量,并对测量结果进行拟合得到不同样品的折射率及非均质特性。实验结果表明,工件架转速是使大尺寸Si O2薄膜材料产生非均质特性的主要影响因素,离子源能量、基板温度、沉积压强通过影响材料生长过程对材料的非均质特性产生调控;对于大尺寸薄膜光学元件,工件架转速存在限制的条件下,优化其他工艺参数可以获得均质Si O2薄膜材料,该结果对于制备具有优良性能的大尺寸薄膜光学元件具有借鉴意义。
With increasing of deposition machine's dimension,the growth process of thin film material will show new phenomena.In order to get homogenous large caliber optical thin film,different single SiO_2 layers were fabricated using ion-assisted electric gun evaporation under different ion source energy,deposition pressure,substrate temperature and different rotation speed.Spectroscopic ellipsometry and spectrometer were used to measure SiO_2 samples' ellipsometric parameters and transmission spectra,respectively.Refractive index and it's distribution were got by fitting the corresponding measurement results.It is shown that rotation speed is the main cause for the inhomogeneity of large caliber SiO_2 thin film.Ion source energy,deposition pressure and substrate temperature can modulate the inhomogeneity by affecting SiO_2 thin film's growing process.When the rotation speed is limited for large dimension optical elements,homogenous optical thin film can also be got by optimizing other deposition parameters.
With increasing of deposition machine's dimension,the growth process of thin film material will show new phenomena.In order to get homogenous large caliber optical thin film,different single SiO_2 layers were fabricated using ion-assisted electric gun evaporation under different ion source energy,deposition pressure,substrate temperature and different rotation speed.Spectroscopic ellipsometry and spectrometer were used to measure SiO_2 samples' ellipsometric parameters and transmission spectra,respectively.Refractive index and it's distribution were got by fitting the corresponding measurement results.It is shown that rotation speed is the main cause for the inhomogeneity of large caliber SiO_2 thin film.Ion source energy,deposition pressure and substrate temperature can modulate the inhomogeneity by affecting SiO_2 thin film's growing process.When the rotation speed is limited for large dimension optical elements,homogenous optical thin film can also be got by optimizing other deposition parameters.
引文
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[15]陆益敏,王淑云,郭延龙,等.激光沉积大面积均匀薄膜数学模型与实验[J].强激光与粒子束,2015,27:071007.(Lu Yimin,Wang Shuyun,Guo Yanlong,et al.Mathematical model and experiment for preparing uniform film by PLD on large surface.High Power Laser and Particle Beams,2015,27:071007)
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[19]Wang J,Maier R L,Schreiber H.Crystal phase transition of HfO2films evaporated by plasma-ion-assisted deposition[J].Appl Opt,2008,47(13):C189-C192.
[20]Jeans J.An introduction to the kinetic theory of gases[M].London:Cambridge University Press,1982.
[2]Sankur H,Southwell W H.Broadband gradient-index antireflection coating for ZnSe[J].Appl Opt,1984,23(16):2770-2773.
[3]Kennedy S R,Brett M J.Porous broadband antireflection coating by glancing angle deposition[J].Appl Opt,2003,42(22):4573-4579.
[4]蒲云体,陈松林,乔曌,等.渐变折射率Ta2O5/SiO2薄膜多脉冲激光损伤特性[J].强激光与粒子束,2014,26:022019.(Pu Yunti,Chen Songlin,Qiao Zhao,et al.Multi-shot laser damage effects on Ta2O5/SiO2gradient-index optical thin film.High Power Laser and Particle Beams,2014,26:022019)
[5]Tikhonravov A V,Trubetskov M K,Sullivan B T,et al.Influence of small inhomogeneities on the spectral characteristics of single thin films[J].Appl Opt,1997,36(28):7188-7198.
[6]Tikhonravov A V,Trubetskov M K,Krasilnikova A V.Spectroscopic ellipsometry of slightly inhomogeneous nonabsorbing thin films with arbitrary refractive-index profiles:theoretical study[J].Appl Opt,1997,37(25):5902-5911.
[7]Kuhaili M F A,Khawaja E E,Durrani S M A.Determination of the optical constants(nand k)of inhomogeneous thin films with linear index profiles[J].Appl Opt,2006,45(19):4591-4597.
[8]Lariviere G P,Frigerio J M,Rivory J,et al.Estimate of the degree of inhomogeneity of the refractive index of dielectric films from spectroscopic ellipsometry[J].Appl Opt,1992,31(28):6056-6061.
[9]Bertram R,Ouellette M F,Tse P Y.Inhomogeneous optical coatings:an experimental study of a new approach[J].Appl Opt,1989,28(14):2935-2939.
[10]Xi J Q,Kim J K,Schubert E F,et al.Very low-refractive-index optical thin films consisting of an array of SiO2nanorods[J].Opt Lett,2006,31(5):601-603.
[11]Jiao H F,Cheng X B,Bao G H,et al.Study of HfO2/SiO2dichroic laser mirrors with refractive index inhomogeneity[J].Appl Opt,2014,53(4):A56-A61.
[12]Borgogno J P,Bousquet P,Flory F,et al.Inhomogeneity in film:limitation of the accuracy of optical monitoring of films[J].Appl Opt,1981,20(1):90-94.
[13]Jerman M,Qiao Z,Mergel D.Refractive index of thin films of SiO2,ZrO2,and HfO2as a function of the films’mass density[J].Appl Opt,2005,44(15):3006-3012.
[14]刘杰,张伟丽,朱美萍.532nm HfO2/SiO2高反膜的激光预处理效应[J].强激光与粒子束,2015,27:032034.(Lu Jie,Zhang Weili,Zhu Meiping.Laser conditioning effect of HfO2/SiO2high reflectors at 532nm.High Power Laser and Particle Beams,2015,27:032034)
[15]陆益敏,王淑云,郭延龙,等.激光沉积大面积均匀薄膜数学模型与实验[J].强激光与粒子束,2015,27:071007.(Lu Yimin,Wang Shuyun,Guo Yanlong,et al.Mathematical model and experiment for preparing uniform film by PLD on large surface.High Power Laser and Particle Beams,2015,27:071007)
[16]刘艳松,许华,李俊,等.磁控溅射制备微球表面金属Mo涂层的研究[J].强激光与粒子束,2014,26:124104.(Liu Yansong,Xu Hua,Li Jun,et al.Studies of fabrication Mo coatings on microsphere surface by magnetron sputtering.High Power Laser and Particle Beams,2014,26:124104)
[17]Hodgkinson I,Wu Q,Hazel J.Empirical equations for the principal refractive indices and column angle of obliquely deposited films of tantalum oxide,titanium oxide,and zirconium oxide[J].Appl Opt,1998,37(13):2653-2659.
[18]Tait R N,Smy T,Brett M J.Modelling and characterization of columnar growth in evaporated films[J].Thin Solid Films,1993,226:196-201.
[19]Wang J,Maier R L,Schreiber H.Crystal phase transition of HfO2films evaporated by plasma-ion-assisted deposition[J].Appl Opt,2008,47(13):C189-C192.
[20]Jeans J.An introduction to the kinetic theory of gases[M].London:Cambridge University Press,1982.