MPS二极管的少子特性仿真
|
摘要
混合pin/肖特基(MPS)二极管是广泛应用于电子电路中的快恢复功率器件,具有高击穿电压、快速开关和正向电流大等特性。对MPS二极管漂移区的少数载流子的特性进行了仿真分析。仿真结果表明,MPS二极管的p~+区向漂移区注入的少数载流子浓度随外加正向电压和pn结面积占元胞总面积比例的增大而增大。虽然漂移区的少数载流子改变了MPS二极管的工作模式,增大了电流,但是存储在漂移区的少数载流子增大了反向峰值电流和恢复时间,进而增大了功耗并降低了关断速度。折中考虑正向电流和反向恢复特性,可获得具有正向电流大、反向峰值电流小和反向恢复时间短的MPS二极管。
Merged pin/Schottky(MPS) diode with high breakdown voltage,fast switching speed and large forward current density is fast and soft restoration of power device widely used in electronic circuits. The characteristics of minority carriers in the drift region of the MPS diode were simulated and analyzed. The simulation results show that the minority carriers are injected into the drift region from the p~+ region of the MPS diode, and the concentration minority carriers is increased with the increase of the external forward voltage and the ratio of the pn junction area to the total area of the cell. The operating mode of the MPS diode is changed by the minority carriers in the drift region, and the current is increased. The reverse peak current and recovery time are increased because of the minority carriers stored in the drift region. Therefore, the power consumption is increased and the turn-off speed is reduced. Considering about the characteristics of the forward current and reverse recovery,the MPS diode with large forward current,small reverse peak current and short reverse recovery time can be obtained.
Merged pin/Schottky(MPS) diode with high breakdown voltage,fast switching speed and large forward current density is fast and soft restoration of power device widely used in electronic circuits. The characteristics of minority carriers in the drift region of the MPS diode were simulated and analyzed. The simulation results show that the minority carriers are injected into the drift region from the p~+ region of the MPS diode, and the concentration minority carriers is increased with the increase of the external forward voltage and the ratio of the pn junction area to the total area of the cell. The operating mode of the MPS diode is changed by the minority carriers in the drift region, and the current is increased. The reverse peak current and recovery time are increased because of the minority carriers stored in the drift region. Therefore, the power consumption is increased and the turn-off speed is reduced. Considering about the characteristics of the forward current and reverse recovery,the MPS diode with large forward current,small reverse peak current and short reverse recovery time can be obtained.
引文
[1] 牛新军.4H-SiC混合pin/Schottky(MPS)二极管的研究[D]. 西安:西安电子科技大学,2002.
[2] SAWANT F S,BALIGA B J. 4 kV merged pin Schottky (MPS) rectifiers [C]//Proceedings of the 10th International Symposium on Power Semiconductor Devices and IC’s. Kyoto,Japan,1998:297-300.
[3] NIWA H,SUDA J,KIMOTO T. Ultrahigh-voltage SiC MPS diodes with hybrid unipolar/bipolar operation [J].IEEE Transactions on Electron Devices,2017,64(3):874-881.
[4] HUANG Y R, WACHUTKA G. Comparative study of contact topographies of 4.5 kV SiC MPS diodes for optimizing the forward characteristics [C] //Proceedings of International Conference on Simulation of Semiconductor Processes and Devices. Nuremberg,Germany, 2016:117-120.
[5] 黄健华,吕红亮,张玉明,等. 4H-SiC混合pin/Schottky二极管的一种复合终端结构的研究[C] //第七届中国功能材料及其应用学术会议论文集.长沙,中国, 2010:486-488.
[6] LIBBLY R L S, SISON L G, CRUZ D M. Switching performance characterization of SiC Schottky diodes in switch-mode DC-DC converters [C] // Proceedings of IEEE International Conference on Industrial Technology. Hammamet, Tunisia,2005:628-633.
[7] 张晓勇,关艳霞. MPS二极管特性折衷的研究[J]. 微处理机,2018,39(1):1-4. ZAHNG X Y. GUAN Y X. Research on the MPS diode characteristics trade-off [J]. Microprocessor,2018, 39(1):1-4(in Chinese).
[8] 许海虹. 1 200 V MPS二极管的模拟与设计[D]. 沈阳:沈阳工业大学,2017.
[9] 杜小堂. MPS二极管“软恢复”的原理探讨、仿真设计与研制实践[D]. 成都:电子科技学,2010.
[10] 王辉. 2 500 V/2 A快恢复二极管的优化设计[D]. 西安:西安理工大学,2017.
[11] 孟庆龙,张彬,尚静,等. 砷化镓类半导体材料在太赫兹波段的透射特性研究[J]. 光电子·激光,2018,29(9):964-968.MENG Q L,ZHANG B,SHANG J,et al. Study on the transmission for the type of gallium arsenide semiconductor materials at the terahertz band [J]. Journal of Optoelectronics·Laser,2018,29 (9):964-968 (in Chinese).
[12] NEAMEND A.半导体物理与器件[M].赵毅强,译.4版.北京:电子工业出版社,2013:177.
[2] SAWANT F S,BALIGA B J. 4 kV merged pin Schottky (MPS) rectifiers [C]//Proceedings of the 10th International Symposium on Power Semiconductor Devices and IC’s. Kyoto,Japan,1998:297-300.
[3] NIWA H,SUDA J,KIMOTO T. Ultrahigh-voltage SiC MPS diodes with hybrid unipolar/bipolar operation [J].IEEE Transactions on Electron Devices,2017,64(3):874-881.
[4] HUANG Y R, WACHUTKA G. Comparative study of contact topographies of 4.5 kV SiC MPS diodes for optimizing the forward characteristics [C] //Proceedings of International Conference on Simulation of Semiconductor Processes and Devices. Nuremberg,Germany, 2016:117-120.
[5] 黄健华,吕红亮,张玉明,等. 4H-SiC混合pin/Schottky二极管的一种复合终端结构的研究[C] //第七届中国功能材料及其应用学术会议论文集.长沙,中国, 2010:486-488.
[6] LIBBLY R L S, SISON L G, CRUZ D M. Switching performance characterization of SiC Schottky diodes in switch-mode DC-DC converters [C] // Proceedings of IEEE International Conference on Industrial Technology. Hammamet, Tunisia,2005:628-633.
[7] 张晓勇,关艳霞. MPS二极管特性折衷的研究[J]. 微处理机,2018,39(1):1-4. ZAHNG X Y. GUAN Y X. Research on the MPS diode characteristics trade-off [J]. Microprocessor,2018, 39(1):1-4(in Chinese).
[8] 许海虹. 1 200 V MPS二极管的模拟与设计[D]. 沈阳:沈阳工业大学,2017.
[9] 杜小堂. MPS二极管“软恢复”的原理探讨、仿真设计与研制实践[D]. 成都:电子科技学,2010.
[10] 王辉. 2 500 V/2 A快恢复二极管的优化设计[D]. 西安:西安理工大学,2017.
[11] 孟庆龙,张彬,尚静,等. 砷化镓类半导体材料在太赫兹波段的透射特性研究[J]. 光电子·激光,2018,29(9):964-968.MENG Q L,ZHANG B,SHANG J,et al. Study on the transmission for the type of gallium arsenide semiconductor materials at the terahertz band [J]. Journal of Optoelectronics·Laser,2018,29 (9):964-968 (in Chinese).
[12] NEAMEND A.半导体物理与器件[M].赵毅强,译.4版.北京:电子工业出版社,2013:177.