基于电-热-机械耦合作用机理的IGBT可靠性模型
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摘要
基于IGBT的工作机理与特性,通过开关特性映射其电特性,通过结温映射其热特性,通过键丝断裂映射其机械特性,对其电-热-机械耦合作用机理进行了深入分析,得出饱和压降随键丝翘起呈线性增大规律。在此基础上,基于Saber仿真平台建立了IGBT可靠性评估模型,并在不同机械疲劳状态下,对其动静态特性进行了验证,仿真与实验结果吻合良好,验证了模型的正确性与准确性。该研究对于IGBT器件及电力电子装置可靠性与优化设计具有一定的指导意义。
Based on the mechanism and characteristic of IGBT,and on the way of switching corresponding to electrical characteristics,junction temperature corresponding to thermal characteristics and bond wire fracture corresponding to mechanical characteristics,the electrothermal and mechanical coupling mechanism was analyzed deeply. Then,it was deduced that the saturation voltage is increased approximately in the linear proportion to the number of bond wire fracture. On this basis,IGBT reliability and evaluation model was established with simulation platform of Saber,whose dynamic and static characteristics were verified under different mechanical fatigue conditions. And its simulation and test results are consistent,which verifies its correctness and accuracy. This research has certain guiding significance for the reliability of IGBT and the optimal design of power electronic equipment.
Based on the mechanism and characteristic of IGBT,and on the way of switching corresponding to electrical characteristics,junction temperature corresponding to thermal characteristics and bond wire fracture corresponding to mechanical characteristics,the electrothermal and mechanical coupling mechanism was analyzed deeply. Then,it was deduced that the saturation voltage is increased approximately in the linear proportion to the number of bond wire fracture. On this basis,IGBT reliability and evaluation model was established with simulation platform of Saber,whose dynamic and static characteristics were verified under different mechanical fatigue conditions. And its simulation and test results are consistent,which verifies its correctness and accuracy. This research has certain guiding significance for the reliability of IGBT and the optimal design of power electronic equipment.
引文
[1]孔梅娟,李志刚,李雄. IGBT功率模块状态监测技术研究现状[J].半导体技术,2017,12(2):145-152.
[2] Hyunseok Oh,Bongtae Han,Patrick McCluskey. Physics-offailure,Condition Monitoring,and Prognostics of Insulated Gate Bipolar Transistor Modules:A Review[J]. IEEE Transactions on Power Electronics,2015,30(5):2413-2426.
[3] Batard C,Ginot N,Antonios J. Lumped Dynamic Electrothermal Model of IGBT Module of Inverters[J]. IEEE Transactions on Components Packaging&Manufacturing Technology,2015,5(3):355-364.
[4] Tang Y,Ma H. Dynamic Electrothermal Model of Paralleled IGBT Modules with Unbalanced Stray Parameters[J]. IEEE Transactions on Power Electronics,2017,32(2):1385-1399.
[5] Sun P,Gong C,Du X. Condition Monitoring IGBT Module Bond Wires Fatigue Using Short-circuit Current Identification[J]. IEEE Transactions on Power Electronics,2017,32(5):3777-3786.
[6] Choi UM,Blaabjerg F,Jorgensen S. Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress[J]. IEEE Transactions on Power Electronics,2018,33(3):2531-2551.
[2] Hyunseok Oh,Bongtae Han,Patrick McCluskey. Physics-offailure,Condition Monitoring,and Prognostics of Insulated Gate Bipolar Transistor Modules:A Review[J]. IEEE Transactions on Power Electronics,2015,30(5):2413-2426.
[3] Batard C,Ginot N,Antonios J. Lumped Dynamic Electrothermal Model of IGBT Module of Inverters[J]. IEEE Transactions on Components Packaging&Manufacturing Technology,2015,5(3):355-364.
[4] Tang Y,Ma H. Dynamic Electrothermal Model of Paralleled IGBT Modules with Unbalanced Stray Parameters[J]. IEEE Transactions on Power Electronics,2017,32(2):1385-1399.
[5] Sun P,Gong C,Du X. Condition Monitoring IGBT Module Bond Wires Fatigue Using Short-circuit Current Identification[J]. IEEE Transactions on Power Electronics,2017,32(5):3777-3786.
[6] Choi UM,Blaabjerg F,Jorgensen S. Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress[J]. IEEE Transactions on Power Electronics,2018,33(3):2531-2551.