一种用于OTP存储器的灵敏放大器设计
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摘要
设计了一种应用于反熔丝OTP存储器的灵敏放大器电路,该电路采用电压型灵敏放大,通过严格的读控制时序,该灵敏放大器能够准确无误地读出并锁存反熔丝存储单元的存储状态。电路结构简单、功耗低、电阻识别精度高、抗干扰能力强。仿真验证表明,在典型条件下,整个灵敏放大阶段仅需要8 ns,且满足在不同工作电压及温度条件下的工作需求。
The paper presents a voltage-mode sense amplifier for anti-fuse OTP memory. The strict read control timing enables accurate access and latching of the storage status. The circuit has many advantages including simple structure, low power consumption, precise resistance identification and excellent anti-interference capability. Simulation results show that the entire amplification duration is merely 8ns under normal condition. Besides, the amplifier is capable of working at various voltage and temperature conditions.
The paper presents a voltage-mode sense amplifier for anti-fuse OTP memory. The strict read control timing enables accurate access and latching of the storage status. The circuit has many advantages including simple structure, low power consumption, precise resistance identification and excellent anti-interference capability. Simulation results show that the entire amplification duration is merely 8ns under normal condition. Besides, the amplifier is capable of working at various voltage and temperature conditions.
引文
[1]焦俊陶.反熔丝存储器设计技术研究[D].成都:电子科技大学,2011.
[2]罗前.OTP存储器电荷泵系统的设计研究[D].成都:电子科技大学,2012.
[3]Mc Collum John.ASIC versus antifuse FPGA reliability[C].Aero Conf IEEE,2009.1.
[4]范雪.一种新型反熔丝存储器的研制及抗辐射加固方法研究[D].成都:电子科技大学,2011.
[5]袁蕊林,陈奕含,等.一种OTP存储器高速读出机制的设计[J].微电子学与计算机,2012,29(1):89-92.
[6]洪根深,吴建伟,等.用于可编程器件的MTM反熔丝特性研究[J].电子与封装,2013,13(11).
[7]王印权,刘国柱,等.MTM反熔丝单元编程特性研究[J].电子与封装,2015,15(3):35-37.
[8]Jinbong Kim,Kwyro Lee.Three-Transistor One-Time Programmable(OTP)ROM Cell Array Using Standard CMOS Gate Oxide Antifuse[J].IEEE Trans.Electron Devices,2003,24(9):589-591.
[9]Steve Chiang,Rahim Forouhi,et al.Antifuse Structure Comparison for Field Programmable Gate Arrays[C].Electron Devices Meeting.idem.Technical Digest International,1993:611-614.
[10]G Zhang,C Hu,P Yu,S Chiang,et al.Reliable Metal-to-Metal Oxide Antifuses[J].IEEE IEDM Tech Digest,1994:281-284.
[11]郑曰,李斌,黄裕泉.一种快速、低压的电流灵敏放大器的设计[J].微电子学与计算机,2006,23(6):130-133.
[12]王勇,张新川,等.一种新型深亚微米电流灵敏放大器的设计[J].现代电子技术,2009,32(24):5-7.
[2]罗前.OTP存储器电荷泵系统的设计研究[D].成都:电子科技大学,2012.
[3]Mc Collum John.ASIC versus antifuse FPGA reliability[C].Aero Conf IEEE,2009.1.
[4]范雪.一种新型反熔丝存储器的研制及抗辐射加固方法研究[D].成都:电子科技大学,2011.
[5]袁蕊林,陈奕含,等.一种OTP存储器高速读出机制的设计[J].微电子学与计算机,2012,29(1):89-92.
[6]洪根深,吴建伟,等.用于可编程器件的MTM反熔丝特性研究[J].电子与封装,2013,13(11).
[7]王印权,刘国柱,等.MTM反熔丝单元编程特性研究[J].电子与封装,2015,15(3):35-37.
[8]Jinbong Kim,Kwyro Lee.Three-Transistor One-Time Programmable(OTP)ROM Cell Array Using Standard CMOS Gate Oxide Antifuse[J].IEEE Trans.Electron Devices,2003,24(9):589-591.
[9]Steve Chiang,Rahim Forouhi,et al.Antifuse Structure Comparison for Field Programmable Gate Arrays[C].Electron Devices Meeting.idem.Technical Digest International,1993:611-614.
[10]G Zhang,C Hu,P Yu,S Chiang,et al.Reliable Metal-to-Metal Oxide Antifuses[J].IEEE IEDM Tech Digest,1994:281-284.
[11]郑曰,李斌,黄裕泉.一种快速、低压的电流灵敏放大器的设计[J].微电子学与计算机,2006,23(6):130-133.
[12]王勇,张新川,等.一种新型深亚微米电流灵敏放大器的设计[J].现代电子技术,2009,32(24):5-7.