一种星用高可靠性MTM反熔丝PROM存储单元
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摘要
提出了一种新型的,可用于卫星及其他航天器的高可靠性MTM反熔丝PROM存储单元,并围绕该存储单元,研究了其编程方式.实验表明,在PROM电路中采用该存储单元,且按照所述的编程方式,可以在编程过程中对未选中反熔丝实施有效保护,进而提高PROM芯片整体的可靠性和使用寿命.
In this paper,a novel MTM anti-fuse PROM bitcell with a high reliability is proposed,which can be used in stars and other spacecrafts.Based on this bitcell,programming and verification methods are studied.The use in PROM of the bitcell with the programming method described in this paper,can offer an effective protection to unselected anti-fuses in the programming process,therefore the reliability and working life of the PROM are improved.
In this paper,a novel MTM anti-fuse PROM bitcell with a high reliability is proposed,which can be used in stars and other spacecrafts.Based on this bitcell,programming and verification methods are studied.The use in PROM of the bitcell with the programming method described in this paper,can offer an effective protection to unselected anti-fuses in the programming process,therefore the reliability and working life of the PROM are improved.
引文
[1]王长河.航天电子系统中的电子元器件辐射效应分析及抗辐射对策[J].电子元器件应用,2001,7(7):4-6.
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[4]Shih C C,Lambertson R,Hawley F,et al.Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density fieldprogrammable gate arrays[C]//Reliability Physics Symposium,1997.35th Annual Proceedings.,IEEE International,Denver:IEEE,1997:25-33.
[5]Kim J,Lee K.Three-transistor one-time programmable(OTP)ROM cell array using standard CMOS gate oxide antifuse[J].Electron Device Letters,IEEE,2003,24(9):589-591.
[6]周霁,孙武山.256K PROM电路技术研究[C]//第十届全国抗辐射电子学与电磁脉冲学术年会论文集.北京,2009.
[7]Data Sheet.UT28F256QL Radiation-Hardened 32K×8PROM,Jnue 2005[EB/OL].[2016-01-09].www.areoflex.com/radhard.
[8]焦俊陶.反熔丝型存储器设计技术研究[D].西安:电子科技大学,2011.
[9]MIL-STD-883J.Test method standard microcircuits.USA:DEPARTMENT OF DEFENSE,2015.
[2]Zhang G,King Y,Elfoukhy S,et al.On-state reliability of amorphous silicon antifuses[C]//Electron Devices Meeting 1988.IEDM'88.Technical Digest,International.San Franciso,CA,1996:551-554.
[3]Nicollian P E,Hunter W R.Model for the leakage instability in unprogrammed amorphous silicon antifuse devices[C]//Reliability Physics Symposium,1995.33rd Annual Proceeding,IEEE International.IEEE,1995:42-47.
[4]Shih C C,Lambertson R,Hawley F,et al.Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density fieldprogrammable gate arrays[C]//Reliability Physics Symposium,1997.35th Annual Proceedings.,IEEE International,Denver:IEEE,1997:25-33.
[5]Kim J,Lee K.Three-transistor one-time programmable(OTP)ROM cell array using standard CMOS gate oxide antifuse[J].Electron Device Letters,IEEE,2003,24(9):589-591.
[6]周霁,孙武山.256K PROM电路技术研究[C]//第十届全国抗辐射电子学与电磁脉冲学术年会论文集.北京,2009.
[7]Data Sheet.UT28F256QL Radiation-Hardened 32K×8PROM,Jnue 2005[EB/OL].[2016-01-09].www.areoflex.com/radhard.
[8]焦俊陶.反熔丝型存储器设计技术研究[D].西安:电子科技大学,2011.
[9]MIL-STD-883J.Test method standard microcircuits.USA:DEPARTMENT OF DEFENSE,2015.