MTM反熔丝器件编程单元的空间应用适应性评估
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摘要
文章结合航天应用空间环境要求以及MTM反熔丝器件的特点,对MTM反熔丝器件编程单元的航天应用特性进行了分析,提出了MTM反熔丝单元的可靠性评估方法,并对MTM反熔丝单元编程前后的可靠性进行了评估;从抗总剂量和抗单粒子效应两方面对MTM反熔丝器件的空间环境适应性进行试验验证。结果表明:MTM反熔丝工艺满足空间环境应用需要,采用该工艺的器件应用于航天器具有较高的可靠性和空间环境适应性。
Based on the space environmental requirements and the characteristics of MTM anti-fuse devices, this paper analyzes the performance of MTM anti-fuse programmable units in aerospace applications. A reliability evaluation method for MTM anti-fuse units is proposed, and the reliability of the units before and after programing is evaluated. The applicability of the MTM anti-fuse process in the space environment is verified by TID and SEE tests. It is shown that the MTM anti-fuse process can meet the requirements in the space environment, and the MTM anti-fuse device is of high reliability and good adaptability to the environment in spacecraft applications.
Based on the space environmental requirements and the characteristics of MTM anti-fuse devices, this paper analyzes the performance of MTM anti-fuse programmable units in aerospace applications. A reliability evaluation method for MTM anti-fuse units is proposed, and the reliability of the units before and after programing is evaluated. The applicability of the MTM anti-fuse process in the space environment is verified by TID and SEE tests. It is shown that the MTM anti-fuse process can meet the requirements in the space environment, and the MTM anti-fuse device is of high reliability and good adaptability to the environment in spacecraft applications.
引文
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[8]王印权,郑若成,徐海铭,等.MTM反熔丝单元的辐照特性研究[J].电子与封装,2017,17(4):34-38WANG Y Q,ZHENG R C,XU H M,et al.TID effect on MTM anti-fuse cell[J].Electronics and Packaging,2017,17(4):34-38
[9]MCPHERSON J W,BAGLEE D A.Accelerated factors for thin gate oxide stressing[J].IEEE Proceedings of International Reliability Physics.Piscataway,NJ,1985:1
[10]CHEN I C,HOLLAND S,HU C.A quantitative physical model for time-dependent breakdown in Si O2[J].IEEE Proceedings of International Reliability Physics.Piscataway,NJ,1985:24
[11]Department of defense test method standard microcircuits:MIL-STD-883E[S],1991
[2]江洋,田敏,钟汇才.基于Hf O2的MTM反熔丝编程特性研究[J].微纳电子技术,2016,53(6):360-363JIANG Y,TIAN M,ZHONG H C.Study on the programming characteristic of Hf O2-based MTM antifuse[J].Micronanoelectronic Technology,2016,53(6):360-363
[3]孙承松,张丽娟,李新.ONO反熔丝的研究[J].沈阳工业大学学报,2006,28(5):546-548SUN C S,ZHANG L J,LI X.Study on ONO anti-fuse[J].Journal of Shenyang University of Technology,2006,28(5):546-548
[4]CHIANG S,FOROUHI R,CHEN W,et al.Antifuse structure comparison for field programmable gate arrays[C]//Proceedings of International Electron Device Meeting.San Francisco,CA,1992:611-614
[5]毛冬冬.基于MTM反熔丝结构的OTP存储器读出系统的设计[D].成都:电子科技大学,2013:8-11
[6]孙杰杰,徐海铭,胡小琴,等.一种星用高可靠性MTM反熔丝PROM存储单元[J].微电子学与计算机,2016,33(12):89-92SUN J J,XU H M,HU X Q,et al.A MTM antifuse PROM bitcell with a high reliability for satellite use[J].Microelectronics&Computer,2016,33(12):89-92
[7]范雪.一种新型反熔丝存储器的研制及其抗辐射加固方法研究[D].成都:电子科技大学,2011:18-22
[8]王印权,郑若成,徐海铭,等.MTM反熔丝单元的辐照特性研究[J].电子与封装,2017,17(4):34-38WANG Y Q,ZHENG R C,XU H M,et al.TID effect on MTM anti-fuse cell[J].Electronics and Packaging,2017,17(4):34-38
[9]MCPHERSON J W,BAGLEE D A.Accelerated factors for thin gate oxide stressing[J].IEEE Proceedings of International Reliability Physics.Piscataway,NJ,1985:1
[10]CHEN I C,HOLLAND S,HU C.A quantitative physical model for time-dependent breakdown in Si O2[J].IEEE Proceedings of International Reliability Physics.Piscataway,NJ,1985:24
[11]Department of defense test method standard microcircuits:MIL-STD-883E[S],1991