雾化施液同质硬脆晶体互抛CMP工艺研究
|
摘要
探究了雾化施液同质硬脆晶体互抛CMP工艺抛光单晶硅片的可行性,分析其材料去除机理。试验采用传统的化学机械抛光CMP和雾化施液同质硬脆晶体互抛CMP,使用三种含有不同成分的抛光液对硅片进行抛光,对抛光前后的硅片进行称重比较两种工艺方法的材料去除率;通过扫面探针显微镜观察硅片的表面形貌,对其表面粗糙度进行分析。使用雾化施液同质硬脆晶体互抛CMP工艺对硅片进行抛光时,硅片表面材料去除率随着抛光压力的增大而增大,抛光压力为9 psi时达到最大为711 nm/min,高于传统化学机械抛光的630 nm/min;对两种工艺抛光后的硅片进行扫描分析得出雾化施液化学机械抛光工艺抛光后的硅片表面粗糙度为3. 8 nm,低于传统化学机械抛光工艺的6. 8 nm。雾化施液同质硬脆晶体互抛CMP工艺抛光硅片是可行的,优于传统化学机械抛光工艺,具有材料去除率高、抛光效果好、节约成本以及绿色环保的优点。
To explore feasibility of polishing single crystal silicon wafer by mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP,and analyzes the removal mechanism of material. It adopts traditional chemical mechanical polishing CMP and mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP respectively, which uses three polishing fluids containing different ingredients to polish the silicon wafer. The wafer before and after polishing is weighed,thus comparing the material removal rates of the two processes. The surface morphology of silicon wafer was observed by scanning probe microscope,so as to analyze its surface roughness. When using mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP to polish silicon wafers,surface material removal rate of silicon wafer increases with the increase of polishing pressure. When the Polish pressure is 9 psi,the maximum is 711 nm/min,which is higher than 630 nm/min of conventional chemical mechanical polishing. Through scanning the silicon wafer after polishing the two processes,it is analyzed that the surface roughness of the silicon wafer after polishing is 3. 8 nm,which is less than6. 8 nm of traditional chemical mechanical polishing process. It 's feasible to use mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP to polish silicon wafers,which is superior to the traditional chemical mechanical polishing process and has the advantages of high material removal rate,good polishing effect,cost saving and environmental protection.
To explore feasibility of polishing single crystal silicon wafer by mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP,and analyzes the removal mechanism of material. It adopts traditional chemical mechanical polishing CMP and mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP respectively, which uses three polishing fluids containing different ingredients to polish the silicon wafer. The wafer before and after polishing is weighed,thus comparing the material removal rates of the two processes. The surface morphology of silicon wafer was observed by scanning probe microscope,so as to analyze its surface roughness. When using mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP to polish silicon wafers,surface material removal rate of silicon wafer increases with the increase of polishing pressure. When the Polish pressure is 9 psi,the maximum is 711 nm/min,which is higher than 630 nm/min of conventional chemical mechanical polishing. Through scanning the silicon wafer after polishing the two processes,it is analyzed that the surface roughness of the silicon wafer after polishing is 3. 8 nm,which is less than6. 8 nm of traditional chemical mechanical polishing process. It 's feasible to use mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP to polish silicon wafers,which is superior to the traditional chemical mechanical polishing process and has the advantages of high material removal rate,good polishing effect,cost saving and environmental protection.
引文
[1]余永定.21世纪世界经济九大趋势[J].瞭望,2000(1):15-17.
[2]金撼尘.微电子技术发展的新领域[J].电子世界,2014(9):5-6.
[3]梅燕,韩业斌,聂祚仁,等.用于超精密硅晶片表面的化学机械抛光技术研究[J].润滑与密封,2006,31(9):206-212.
[4]Zhong Z W,Tian Y B,Ang Y J,et al.Optimization of the Chemical Mechanical Polishing Process for Optical SiliconSubstrates[J].The International Journal of Advanced Manufacturing Technology,2012,60(9/10/11/12):1197-1206.
[5]陈晓春,赵永武,王永光.单晶硅片化学机械抛光的表面损伤研究[J].润滑与密封,2014,39(4):15-22.
[6]袁巨龙,张飞虎,戴一帆,等.超精密加工领域科学技术发展研究[J].机械工程学报,2010,46(15):161-177.
[7]李英的,刘玉岭,孙鸣,等.SiO2/CeO2混合磨料对硅CMP效果影响[Q].半导体制造技术,2013,38(1):51-54.
[8]李庆,金洙吉,张然,等.分散剂对铜CMP材料去除率和表面粗糙度影响的实验研究[J].润滑与密封,2007,32(3):70-109.
[9]Su J X,Zhang X M,Liu X L,et al.Formation Mechanism of Non-unifomity of Material Removal in Chemical Mechanical Polishing Based on Free Abrasive[U].Nanotechnology and Precision Engineering,2012,10(6):541-548.
[10]陈海涛,擅柏梅,刘玉岭,等.晶片CMP后表面纳米颗粒的去除研究[J].制造工艺技术,2011,36(1):11-21.
[11]刘晓鹏.精细雾化拋光系统设计及雾化参数的研究[D].无锡:江南大学,2011:5566.
[12]Zhao Y W,Chang L,Kim S H.A Mathematical Model for Chemical Mechanical Polishing Based on Formation and Removal of Weakly Bonded Molecular Species[J].Wear,2003,254:332-339.
[13]蒋建忠,袁晓林,赵永武,等.CMP过程磨粒压入芯片表面深度的影响因素分析[J].中国机械工程,2011,22(15):1783-1787.
[14]LuoJ B.Integrated Modeling of Chemical Mechanical Planari-zation/Polishing(CMP)for Integrated Circuit Fabrication From Partical Scale to Die and Wafer Scales[D].Berkeley:Univ of California,2003.
[15]赵永武,王永光.基于单分子层去除机理的芯片化学机械拋光材料去除模型[J].江南大学学报:自然科学版,2007,6(1):86-90.
[2]金撼尘.微电子技术发展的新领域[J].电子世界,2014(9):5-6.
[3]梅燕,韩业斌,聂祚仁,等.用于超精密硅晶片表面的化学机械抛光技术研究[J].润滑与密封,2006,31(9):206-212.
[4]Zhong Z W,Tian Y B,Ang Y J,et al.Optimization of the Chemical Mechanical Polishing Process for Optical SiliconSubstrates[J].The International Journal of Advanced Manufacturing Technology,2012,60(9/10/11/12):1197-1206.
[5]陈晓春,赵永武,王永光.单晶硅片化学机械抛光的表面损伤研究[J].润滑与密封,2014,39(4):15-22.
[6]袁巨龙,张飞虎,戴一帆,等.超精密加工领域科学技术发展研究[J].机械工程学报,2010,46(15):161-177.
[7]李英的,刘玉岭,孙鸣,等.SiO2/CeO2混合磨料对硅CMP效果影响[Q].半导体制造技术,2013,38(1):51-54.
[8]李庆,金洙吉,张然,等.分散剂对铜CMP材料去除率和表面粗糙度影响的实验研究[J].润滑与密封,2007,32(3):70-109.
[9]Su J X,Zhang X M,Liu X L,et al.Formation Mechanism of Non-unifomity of Material Removal in Chemical Mechanical Polishing Based on Free Abrasive[U].Nanotechnology and Precision Engineering,2012,10(6):541-548.
[10]陈海涛,擅柏梅,刘玉岭,等.晶片CMP后表面纳米颗粒的去除研究[J].制造工艺技术,2011,36(1):11-21.
[11]刘晓鹏.精细雾化拋光系统设计及雾化参数的研究[D].无锡:江南大学,2011:5566.
[12]Zhao Y W,Chang L,Kim S H.A Mathematical Model for Chemical Mechanical Polishing Based on Formation and Removal of Weakly Bonded Molecular Species[J].Wear,2003,254:332-339.
[13]蒋建忠,袁晓林,赵永武,等.CMP过程磨粒压入芯片表面深度的影响因素分析[J].中国机械工程,2011,22(15):1783-1787.
[14]LuoJ B.Integrated Modeling of Chemical Mechanical Planari-zation/Polishing(CMP)for Integrated Circuit Fabrication From Partical Scale to Die and Wafer Scales[D].Berkeley:Univ of California,2003.
[15]赵永武,王永光.基于单分子层去除机理的芯片化学机械拋光材料去除模型[J].江南大学学报:自然科学版,2007,6(1):86-90.