射频前端强电磁脉冲防护模块设计
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摘要
基于PIN二极管射频限幅的原理,分析了尖峰泄露产生的原因并提出了解决方法。在此基础上采用无源多级PIN二极管结构,提取相应防护电路的S参数,以设计优化匹配网络,研制了工作于1~200MHz、插入损耗小于0.156dB、响应时间小于1ns的射频前端电磁脉冲防护模块。结合PIN二极管模型,利用ADS仿真软件对电磁脉冲防护模块限幅性能进行仿真,并对加工出来的电磁脉冲防护模块进行了测试,结果验证了各项指标满足要求。
This paper studies the principle of radio frequency limiting of PIN,and analyzes how the spike leakage occurs in EMP protection and how to restrain it.On this basis,the structure of passive multi-stage PIN diode is adopted.Through the establishment of its field simulation model,the corresponding Sparameters are extracted,and the optimal matching network is optimized.The electromagnetic pulse protection module which works at 1-200 MHz with insertion loss of less than 0.15 dB,VSWR of less than 1.4 dB,response time of less than 1 ns is designed.Combined with PIN diode model,ADS simulation software is used to simulate the limiting performance of electromagnetic pulse protection module.The result shows that all the indexes meet the requirements.
This paper studies the principle of radio frequency limiting of PIN,and analyzes how the spike leakage occurs in EMP protection and how to restrain it.On this basis,the structure of passive multi-stage PIN diode is adopted.Through the establishment of its field simulation model,the corresponding Sparameters are extracted,and the optimal matching network is optimized.The electromagnetic pulse protection module which works at 1-200 MHz with insertion loss of less than 0.15 dB,VSWR of less than 1.4 dB,response time of less than 1 ns is designed.Combined with PIN diode model,ADS simulation software is used to simulate the limiting performance of electromagnetic pulse protection module.The result shows that all the indexes meet the requirements.
引文
[1]怀特.微波半导体控制电路[M].北京:科学出版社,1983.(White J F.Semiconductor control.Beijing:Science Press,1983)
[2]刘国靖,刘国至,潘泉,等.高功率微波短脉冲雷达接收机保护装置设计[J].西安电子科技大学学报,2002,29(2):236-240.(Liu Guojing,Liu Guozhi,Pan Quan,et al.The fundamental design of HPM short-pulse radar receiver protectors.Journal of Xidian University,2002,29(2):236-240)
[3]张希军,杨洁,张庆海.瞬态电压抑制器在快上升沿电磁脉冲作用下的瞬态响应[J].高电压技术,2012,38(9):2242-2247.(Zhang Xijun,Yang Jie,Zhang Qinghai.Transient response of transient voltage suppressor device under EMP with fast rise time.High Voltage Engineering,2012,38(9):2242-2247)
[4]汪海洋,李家胤,周翼鸿,等.PIN限幅器PSpice模拟与实验研究[J].强激光与粒子束,2006,18(1):88-92.(Wang Haiyang,Li Jiayin,Zhou Yihong,et al.Experiment study and PSpice simulation of PIN diode research.High Power Laser and Particle Beams,2006,18(1):88-92)
[5]张忠连.超短波通信系统射频前端电磁防护技术研究[D].成都:电子科技大学,2009:34-39.(Zhang Zhonglian.Study on RF electromagnetic protection technology of ultra short wave communication system.Chengdu:University of Electronic Science and Technology of China,2009:34-39)
[6]颜克文.短波通信设备电磁防护技术研究[D].成都:电子科技大学,2009:43-51.(Yan Kewen.Research on electromagnetic protection technology of short wave communication equipment.Chengdu:University of Electronic Science and Technology of China,2009:43-51)
[7]张海伟,史小卫,徐乐,等.高功率PIN限幅器设计及测试方案[J].强激光与粒子束,2011,23(11):3029-3031.(Zhang Haiwei,Shi Xiaowei,Xu Le,et al.High power PIN limiter design and test plan.High Power Laser and Particle Beams,2011,23(11):3029-3031)
[8]郑生全,邓峰,王冬冬,等.电子设备和系统射频通道高功率微波电磁脉冲场-路综合防护方法综述[J].中国舰船研究,2015,10(2):7-14.(Zheng Shengquan,Deng Feng,Wang Dongdong,et al.Overview of the HPM field-circuit integrated protection methods for electronic equipment and system RF-channel.Chinese Journal of Ship Research,2015,10(2):7-14)
[9]Strollo G M.A new SPiCE model of power P-I-N diode based on asymptotic waveform evaluation[J].IEEE Trans Power Electronics,1997,12(1):12-20.
[10]Caverly R H,Drozdovski N V,Drozdovskaia L M.SPICE modeling of microwave and RF control diodes[C]//Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems,2000:28-31.
[11]Caverly R H,Quinn M J.Time domain modeling of PIN control and limiter diodes[J].IEEE MTT-S Digest,1999,719-722.
[12]Mcnutt T R,Hefner A R,Mantooth H A,et al.Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator[J].IEEE Trans Power Electronics,2004,19(3):573-581.
[13]王晨.射频前端强电磁脉冲防护方法研究[D].长沙:国防科技大学,2013:7-11.(Wang Chen.Study of the strong electromagnetic pulse protection method for RF front-end.Changsha:National University of Defense Technology,2013:7-11)
[2]刘国靖,刘国至,潘泉,等.高功率微波短脉冲雷达接收机保护装置设计[J].西安电子科技大学学报,2002,29(2):236-240.(Liu Guojing,Liu Guozhi,Pan Quan,et al.The fundamental design of HPM short-pulse radar receiver protectors.Journal of Xidian University,2002,29(2):236-240)
[3]张希军,杨洁,张庆海.瞬态电压抑制器在快上升沿电磁脉冲作用下的瞬态响应[J].高电压技术,2012,38(9):2242-2247.(Zhang Xijun,Yang Jie,Zhang Qinghai.Transient response of transient voltage suppressor device under EMP with fast rise time.High Voltage Engineering,2012,38(9):2242-2247)
[4]汪海洋,李家胤,周翼鸿,等.PIN限幅器PSpice模拟与实验研究[J].强激光与粒子束,2006,18(1):88-92.(Wang Haiyang,Li Jiayin,Zhou Yihong,et al.Experiment study and PSpice simulation of PIN diode research.High Power Laser and Particle Beams,2006,18(1):88-92)
[5]张忠连.超短波通信系统射频前端电磁防护技术研究[D].成都:电子科技大学,2009:34-39.(Zhang Zhonglian.Study on RF electromagnetic protection technology of ultra short wave communication system.Chengdu:University of Electronic Science and Technology of China,2009:34-39)
[6]颜克文.短波通信设备电磁防护技术研究[D].成都:电子科技大学,2009:43-51.(Yan Kewen.Research on electromagnetic protection technology of short wave communication equipment.Chengdu:University of Electronic Science and Technology of China,2009:43-51)
[7]张海伟,史小卫,徐乐,等.高功率PIN限幅器设计及测试方案[J].强激光与粒子束,2011,23(11):3029-3031.(Zhang Haiwei,Shi Xiaowei,Xu Le,et al.High power PIN limiter design and test plan.High Power Laser and Particle Beams,2011,23(11):3029-3031)
[8]郑生全,邓峰,王冬冬,等.电子设备和系统射频通道高功率微波电磁脉冲场-路综合防护方法综述[J].中国舰船研究,2015,10(2):7-14.(Zheng Shengquan,Deng Feng,Wang Dongdong,et al.Overview of the HPM field-circuit integrated protection methods for electronic equipment and system RF-channel.Chinese Journal of Ship Research,2015,10(2):7-14)
[9]Strollo G M.A new SPiCE model of power P-I-N diode based on asymptotic waveform evaluation[J].IEEE Trans Power Electronics,1997,12(1):12-20.
[10]Caverly R H,Drozdovski N V,Drozdovskaia L M.SPICE modeling of microwave and RF control diodes[C]//Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems,2000:28-31.
[11]Caverly R H,Quinn M J.Time domain modeling of PIN control and limiter diodes[J].IEEE MTT-S Digest,1999,719-722.
[12]Mcnutt T R,Hefner A R,Mantooth H A,et al.Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator[J].IEEE Trans Power Electronics,2004,19(3):573-581.
[13]王晨.射频前端强电磁脉冲防护方法研究[D].长沙:国防科技大学,2013:7-11.(Wang Chen.Study of the strong electromagnetic pulse protection method for RF front-end.Changsha:National University of Defense Technology,2013:7-11)