白光LED用YAG:Ce~(3+)荧光粉的合成及发光性能研究
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摘要
采用高温固相法合成YAG:Ce~(3+)黄色荧光粉材料,用正交分析法研究了煅烧时间、煅烧温度和Ce~(3+)浓度对荧光粉发光强度的影响。在煅烧温度为1600℃,Ce~(3+)浓度为0.12 mol,煅烧时间为4 h的条件下,得到的荧光粉发光性能最佳。硼酸作为助熔剂,当其浓度含量为1.2wt%,荧光粉的发光强度增大约40%。YAG:Ce~(3+)荧光粉的激发峰呈现双峰特征,其中最大激发峰位于467 nm;最大发射峰位于529 nm处,因此,YAG:Ce~(3+)黄色荧光粉可以与蓝光Ga N芯片匹配制备双基色LED。
YAG:Ce~(3+)yellow phosphors were prepared by the high-temperature solid-state method.The influence of sintering time,sintering temperature and Ce~(3+)content on the luminescence intensity of phosphor was determined by the orthogonal analysis method.When the calcination temperature was 1600℃,the concentration of Ce~(3+)was 0.12 mol and the calcination time was 4 h,the luminous properties of the phosphor obtained were the best.The influence of boric acid as a flux on luminous intensity of phosphors was studied.The phosphor luminescence intensity was increased by about40%at the concentration of H_3BO_3of 1.2wt%.Two obvious absorption peaks can be observed and the maximum excitation wavelength at 467 nm,the maximum emission peak was located at 529 nm.Therefore,YAG:Ce~(3+)yellow phosphor can be matched with blue GaN chip to prepare double basic color LED.
YAG:Ce~(3+)yellow phosphors were prepared by the high-temperature solid-state method.The influence of sintering time,sintering temperature and Ce~(3+)content on the luminescence intensity of phosphor was determined by the orthogonal analysis method.When the calcination temperature was 1600℃,the concentration of Ce~(3+)was 0.12 mol and the calcination time was 4 h,the luminous properties of the phosphor obtained were the best.The influence of boric acid as a flux on luminous intensity of phosphors was studied.The phosphor luminescence intensity was increased by about40%at the concentration of H_3BO_3of 1.2wt%.Two obvious absorption peaks can be observed and the maximum excitation wavelength at 467 nm,the maximum emission peak was located at 529 nm.Therefore,YAG:Ce~(3+)yellow phosphor can be matched with blue GaN chip to prepare double basic color LED.
引文
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[2]Zhou Z,Zhou N,Xia M,et al. Research progress and application prospects of transition metal Mn4+activated luminescent materials[J].Journal of Materials Chemistry C,2016,4(39):9143-9161.
[3]Hong F,Cheng H M,Song Y,et al. Room-temperature synthesis,optimized photoluminescence and warm-white LED application of a highly efficient non-rare-earth red phosphor[J]. Journal of Alloys and compounds,2019,775:1365-1375.
[4]Chen H W,Luo Z Y,Zhu R D,et al. Tuning the correlated color temperature of white LED with a guest host liquid crystal[J]. Optics Express,2015,23(10):13060-13068.
[5]Chang C J,Lai C F,Madhusudhana R P,et al. Color optimization of conjugated-polymer/In Ga N hybrid white light emitting diodes by incomplete energy transfer[J]. Journal of Luminescence,2015,160:145-150.
[6]Gong M G,Liang X J,Wang Y Y,et al. Novel synthesis and optical characterization of phosphor-coverted WLED employing Ce:YAGdoped glass[J]. Journal of Alloys and Compounds,2016,664:125-132.
[7]Que M D,Que W X,Zhou T,et al. Enhanced photoluminescence property of sulfate ions modified YAG:Ce3+phosphor by coprecipitation method[J]. Journal of Rare Earths,2017,35(3):217-222.
[8]Liu Y M,Zou J,Shi M M,et al. Effect of phosphor composition and packaging structure of flexible phosphor films on performance of white LEDs[J]. Journal of Materials Science,2018,29(22):18476-18485.
[9]Que M D,Que W X,Zhou T,et al. Photoluminescence and energy transfer of YAG:Ce3+,Gd3+,Bi3+[J]. Journal of Advaced Dielectrics,2016,6(4):1650029.
[10]Yang H,Lee D K,Kim Y S. Special variations of nanosized Y3Al5O12:Ce phosphors via cooping/substitution and their white LED characteristics[J]. Mater. Chem. Phys.,2009,114:665-669.
[11]Yang H,Kim Y S. Energy transfer-based spectral properties of Tb-Pr-or Sm-codoped YAG:Ce nanocrystalline phosphors[J]. J. Lumin.2008,128:1570-1575.
[12]马林,胡建国,万国江,等. YAG:Ce发光材料合成的助熔剂研究[J].发光学报,2006,27(3):348-353.
[13]Fontcuberta I,Morral A,Bertomeu J,et al. The Role of Hydrogen in the Formation of Microcrystalline Silicon[J]. Mater Sci. Eng:B,2000,69(70):559-563
[14]Tabata A,Fukaya K,Mizutani T. Influence of substrate direct bias voltage on microcrystalline silicon growth during radio-frequency magnetron sputtering[J]. Vacuum,2008,82(8):777-781.
[15]Li Z,Zhao X C,Chen L J,et al. Contrastive research of the Y3Al5O12:Ce3+yellow phosphors prepared by different methods[J].Spectroscopy and Spectral Analysis:2015,35(3):695-699.
[16]郜盛夏,陈毅彬,曾人杰.无团聚YAG:Ce3+荧光粉的制备与表征[J].发光学报,2010,31(6):806-810.