电子辐照GaInP/GaAs/Ge三结太阳电池少子寿命的变化
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摘要
为研究电子辐照空间太阳电池的损伤机制,对电子辐照GaInP/GaAs/Ge三结太阳电池进行了光致发光谱测量,分析了GaInP顶电池及GaAs中间电池发光强度随电子注量的变化规律。利用辐射效率关系对归一化发光强度随电子辐照注量的变化进行了拟合,分别得到了GaInP顶电池及GaAs中间电池在不同辐照条件下的少子非辐射复合寿命τnr,通过对比辐照前后少子非辐射复合寿命的衰降变化,发现GaInP顶电池的抗辐照性能优于GaAs中间电池。
In order to study the electron irradiation effect on space solar cells,electronirradiated induced change of minority carrier lifetime of GaInP/GaAs/Ge triple-junction solar cells was investigated by using photoluminescence(PL)measurements.The variation of PL intensities of GaAs mid-cell and GaInP top-cell with electron fluence was analyzed.The normalized luminescence intensity was fitted with the change of the electron fluence.The minority carrier non-radiative recombination lifetimes of GaInP top-cell and GaAs mid-cell with electron fluence were obtained,respectively.Furthermore,by comparing the non-radiative recombination lifetimes of minority carrier before and after irradiation,it is found that the radiation resistance of GaInP top-cell is better than thatof GaAs mid-cell.
In order to study the electron irradiation effect on space solar cells,electronirradiated induced change of minority carrier lifetime of GaInP/GaAs/Ge triple-junction solar cells was investigated by using photoluminescence(PL)measurements.The variation of PL intensities of GaAs mid-cell and GaInP top-cell with electron fluence was analyzed.The normalized luminescence intensity was fitted with the change of the electron fluence.The minority carrier non-radiative recombination lifetimes of GaInP top-cell and GaAs mid-cell with electron fluence were obtained,respectively.Furthermore,by comparing the non-radiative recombination lifetimes of minority carrier before and after irradiation,it is found that the radiation resistance of GaInP top-cell is better than thatof GaAs mid-cell.
引文
[1]YAMAGUCHI M.Radiation-resistant solar cells for space use[J].Solar Energy Materials&Solar Cells,2001,68(1):31-53.
[2]ANSPAUGH B E.GaAs solar cell radiation handbook[M].California:JPL Publication,1996:1-21.
[3]ZAZOUI M,MBARKI M,ALDIN A Z,et al.Analysis of multijunction solar cell degradation in space and irradiation induced recombination centers[J].Journal of Applied Physics,2003,93(9):5 080-5 084.
[4]RUPPER G,KWONG N H,BINDER R.Theory of time-resolved photo-luminescence and carrier lifetime measurements in GaAs/GaInP heterostructures[C]∥Proceedings of SPIE.US:The International Society for Optical Engineering,2010:76140D-76140D-11.
[5]AIERKEN A,GUO Q,HUTIO T,et al.Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures[J].Radiation Physics and Chemistry,2013,83(2):42-47.
[6]WANG R,LIU Y H,SUN X F.Effects of0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge spacesolar cells for space use[J].Nuclear Instruments and Methods in Physics Research B,2008,266(5):745-749.
[7]WANG R,LU M,YI T C,et al.Effects of 1.0-11.5 MeV electron irradiation on GaInP/GaAs/Ge triple-junction solar cells for space applications[J].Chinese Physics Letters,2014,31(8):103-105.
[8]LU M,WANG R,YANG K,et al.Photoluminescence analysis of electron irradiation-induced defects in GaAs/Ge space solar cells[J].Nuclear Instruments and Methods in Physics Research,2013,312(1):137-140.
[9]ZAZOUI M,BOURGOIN J C.Space degradation of multijunction solar cells:An electroluminescence study[J].Applied Physics Letters,2002,80(23):4 455-4 457.
[10]ELFIKY D,YAMAGUCHI M,SASAKI T,et al.Effect of base doping concentration on radiation-resistance for GaAs sub-cells in InGaP/GaAs/Ge[J].Japanese Journal of Applied Physics,2010,49(12):121202-1-121202-5.
[11]GAUFFIER A,DAVID J P,GILARD O,et al.Experimental methods for defect introduction rates determination in multijunction solar cells[J].IEEE Transactions on Nuclear Science,2009,56(4):2 237-2 241.
[12]鲁明.国产GaAs太阳电池空间辐射效应-加速器模拟、理论分析和模型预测[D].北京:北京师范大学,2014.
[2]ANSPAUGH B E.GaAs solar cell radiation handbook[M].California:JPL Publication,1996:1-21.
[3]ZAZOUI M,MBARKI M,ALDIN A Z,et al.Analysis of multijunction solar cell degradation in space and irradiation induced recombination centers[J].Journal of Applied Physics,2003,93(9):5 080-5 084.
[4]RUPPER G,KWONG N H,BINDER R.Theory of time-resolved photo-luminescence and carrier lifetime measurements in GaAs/GaInP heterostructures[C]∥Proceedings of SPIE.US:The International Society for Optical Engineering,2010:76140D-76140D-11.
[5]AIERKEN A,GUO Q,HUTIO T,et al.Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures[J].Radiation Physics and Chemistry,2013,83(2):42-47.
[6]WANG R,LIU Y H,SUN X F.Effects of0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge spacesolar cells for space use[J].Nuclear Instruments and Methods in Physics Research B,2008,266(5):745-749.
[7]WANG R,LU M,YI T C,et al.Effects of 1.0-11.5 MeV electron irradiation on GaInP/GaAs/Ge triple-junction solar cells for space applications[J].Chinese Physics Letters,2014,31(8):103-105.
[8]LU M,WANG R,YANG K,et al.Photoluminescence analysis of electron irradiation-induced defects in GaAs/Ge space solar cells[J].Nuclear Instruments and Methods in Physics Research,2013,312(1):137-140.
[9]ZAZOUI M,BOURGOIN J C.Space degradation of multijunction solar cells:An electroluminescence study[J].Applied Physics Letters,2002,80(23):4 455-4 457.
[10]ELFIKY D,YAMAGUCHI M,SASAKI T,et al.Effect of base doping concentration on radiation-resistance for GaAs sub-cells in InGaP/GaAs/Ge[J].Japanese Journal of Applied Physics,2010,49(12):121202-1-121202-5.
[11]GAUFFIER A,DAVID J P,GILARD O,et al.Experimental methods for defect introduction rates determination in multijunction solar cells[J].IEEE Transactions on Nuclear Science,2009,56(4):2 237-2 241.
[12]鲁明.国产GaAs太阳电池空间辐射效应-加速器模拟、理论分析和模型预测[D].北京:北京师范大学,2014.