一种正电压控制的单片微波集成单刀双掷开关
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摘要
设计了一款GaAs赝配高电子迁移率晶体管(PHEMT)单片微波集成正电压控制开关。该电路设计采用片上集成隔直电容,对传统负电压控制开关的拓扑结构进行改进。针对PHEMT开关低频(0.1 GHz)下1 dB压缩点输入功率(P_(i(1 dB)))陡降问题进行分析,提出了改进栅极输入阻抗的方法,有效提高了PHEMT开关低频下的P_(i(1 dB))。采用中国电子科技集团公司第十三研究所0.25μm GaAs PHEMT工艺进行了仿真和流片,芯片的面积为1.0 mm×1.0 mm。测试结果表明,在频率为0.1～4 GHz内,插入损耗小于0.8 dB,隔离度大于42 dB,P_(i(1 dB))大于15 dBm。控制电压为0 V/5 V。该款GaAs PHEMT微波单片集成正电压控制开关设计全部达到了预期性能,并实现了改善低频下的P_(i(1 dB))的目标。
A GaAs pseudomorphic high electron mobility transistor(PHEMT) monolithic microwave integrated positive voltage controlled switch was designed. The on-chip integrated isolated capacitance was adopted to improve the topology structure of the traditional negative voltage controlled switch. Based on the analysis of the steep drop of the 1 dB compression point input power(P_(i(1 dB)))of the PHEMT switch at low frequency(0.1 GHz), a method to improve the gate input impedance was proposed, which effectively improved the low frequency P_(i(1 dB)) of the PHEMT switch. Using the 0.25 μm GaAs PHEMT process of the 13~(th) Research Institute of CETC, the SPDT switch MMIC was simulated and fabricated with an area of 1.0 mm×1.0 mm. The test results show that in the frequency range of 0.1-4 GHz, the insertion loss is less than 0.8 dB, the isolation is greater than 42 dB, the P_(i(1 dB)) is greater than 15 dBm. The controlling voltage is 0 V/5 V. The design of the GaAs PHEMT monolithic microwave positive voltage controlled switch achieves the desired performance and the goal of improving the low frequency P_(i(1 dB)).
A GaAs pseudomorphic high electron mobility transistor(PHEMT) monolithic microwave integrated positive voltage controlled switch was designed. The on-chip integrated isolated capacitance was adopted to improve the topology structure of the traditional negative voltage controlled switch. Based on the analysis of the steep drop of the 1 dB compression point input power(P_(i(1 dB)))of the PHEMT switch at low frequency(0.1 GHz), a method to improve the gate input impedance was proposed, which effectively improved the low frequency P_(i(1 dB)) of the PHEMT switch. Using the 0.25 μm GaAs PHEMT process of the 13~(th) Research Institute of CETC, the SPDT switch MMIC was simulated and fabricated with an area of 1.0 mm×1.0 mm. The test results show that in the frequency range of 0.1-4 GHz, the insertion loss is less than 0.8 dB, the isolation is greater than 42 dB, the P_(i(1 dB)) is greater than 15 dBm. The controlling voltage is 0 V/5 V. The design of the GaAs PHEMT monolithic microwave positive voltage controlled switch achieves the desired performance and the goal of improving the low frequency P_(i(1 dB)).
引文
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[2] POVOROZHENKO P A,SOVA E M,LEE A I ,et al.0-4 GHz GaAs MMIC SPST switch[C]//Proceedings of the 23rd international Crimean Conference “Microwave & Telecommunication Technology”.Sevastopol,Ukraine,2013:82-83.
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[4] 刘宇辙,梁晓新,万晶,等.一种DC～6 GHz的GaAs PHEMT宽带低插入损耗单刀双掷开关[J].微电子学与计算机,2016,33(3):1-5,10.LIU Y Z,LIANG X X,WAN J,et al.A DC-6 GHz GaAs PHEMT wideband low insertion loss SPDT RF switch[J].Microelectronics and Computer,2016,33(3):1-5,10 (in Chinese).
[5] WANG G Q,LIU C P.Wideband SPDT switch with TTL control[J].Applied Mechanics and Materials,2014,599/600/601:1820-1823.
[6] 韩玉鹏,赵国庆,赵瑞华,等.一种正电控制低温漂单片数控衰减器[J].半导体技术,2014,39(1):46-50.HAN Y P,ZHAO G Q,ZHAO R H,et al.A positive controlled MMIC digital attenuation with low temperature drift[J].Semiconductor Technology,2014,39(1):46-50 (in Chinese).
[7] 甄建宇,王清源,赵瑞华,等.一种正电控制大衰减量的6 bit单片数控衰减器[J].半导体技术,2013,38(3):184-188.ZHEN J Y,WANG Q Y,ZHAO R H,et al.Positive-bias-controlled MMIC digital attenuator with large attenuation[J].Semiconductor Technology,2013,38(3):184-188 (in Chinese).
[8] 王磊,马伟宾,刘帅.GaAs开关FET功率特性的研究[J].半导体技术,2019,44(2):110-114.WANG L,MA W B,LIU S.Study of the power characteristics of GaAs switch FETs[J].Semiconductor Technology,2019,44(2):110-114 (in Chinese).
[9] 袁帅,邱云峰.微波单片集成电路测试技术研究[J].数字技术与应用,2018,36(11):52-53.YUAN S,QIU Y F.Research on testing technology of microwave monolithic integrated circuit[J].Digital Technology and Applocation,2018,36(11):52-53 (in Chinese).