基于AC 110 V LED芯片制备立体发光灯片研究
|
摘要
基于交流(AC)110V发光二极管(LED)芯片制备了立体发光灯片,并对AC LED的光学均匀性和热学均匀性进行研究。通过改变荧光粉胶的配比来提高正反面的光学均匀性,研究发现,当立体灯片反面的荧光粉胶与正面的比例达到30%时,立体发光灯片反面的光通量与正面的比值最大,且正反面的色温差最小,其荧光粉的激发是最好的。另外,测试4种样品的发光角度,发现其发光角度分布相似,而发光强度与积分球测试得到的光通量比值也相近。同时对热学均匀性进行研究,发现正反面荧光粉胶配比达到30%时,该立体灯片的稳态温度最低,转化的热量最小,其相对应的光通量最高,使得立体灯片的热学均匀性更好。
The three-dimensional(3D)light emitting chip was fabricated based on alternating current(AC)110Vlight emitting diode(LED),and the optical and thermal uniformity of AC LED was studied.The optical uniformity of LED at front and back sides was improved by changing the mixing ratio of phosphor powder.When the ratio of phosphor powder glue between back-side and front-side is 30%,the ratio of luminous flux between back-side and front-side is the largest,and the difference of color temperature is the smallest,which indicates the excitation of phosphor powder is the best.In addition,it is found that 4kinds of samples have the similar light emitting angle distribution.Furthermore,the luminous intensity ratios of samples are similar to the flux ratios tested by the integral ball measurement.For the thermal uniformity,it is found that when the ratio of phosphor powder glue between back-side and front-side is 30%,the steadystate temperature of 3Dlight emitting chip is the lowest,the converting heat the smallest,and corresponding luminous flux the highest,indicating the best thermal uniformity of 3Dlight emitting chip.
The three-dimensional(3D)light emitting chip was fabricated based on alternating current(AC)110Vlight emitting diode(LED),and the optical and thermal uniformity of AC LED was studied.The optical uniformity of LED at front and back sides was improved by changing the mixing ratio of phosphor powder.When the ratio of phosphor powder glue between back-side and front-side is 30%,the ratio of luminous flux between back-side and front-side is the largest,and the difference of color temperature is the smallest,which indicates the excitation of phosphor powder is the best.In addition,it is found that 4kinds of samples have the similar light emitting angle distribution.Furthermore,the luminous intensity ratios of samples are similar to the flux ratios tested by the integral ball measurement.For the thermal uniformity,it is found that when the ratio of phosphor powder glue between back-side and front-side is 30%,the steadystate temperature of 3Dlight emitting chip is the lowest,the converting heat the smallest,and corresponding luminous flux the highest,indicating the best thermal uniformity of 3Dlight emitting chip.
引文
[1]金尚忠,张在宣,郭志军,等.白光照明LED灯温度特性的研究[J].发光学报,2002,23(4):399-402.
[2]李柏承,张大伟,黄元申,等.功率型白光LED封装设计的研究进展[J].激光与光电子学进展,2009,46(9).
[3]Yin Stuart(Shizhuo),Wang Chao,Zhu Wenbin,et al.Single chip super broadband InGaN/GaN LED enabled by nano structured substrate[J].Optics Express,2014,22(S5):A1380-A1388.
[4]文峰,刘德明,黄黎蓉,等.直接出射白光的新型发光二极管[J].光学与光电技术,2006,4(3):21-24.
[5]李杨,董素素,王艺燃,等.垂直结构LED和倒装结构LED的发光特性研究[J].光电技术应用,2014,29(5):47-51.
[6]王艺燃,李月峰,邹军.白光LED加速老化性能分析[J].中国照明电器,2014,(10):43-46.
[7]张生冬,王凤超,邹军.不同粒径YAG荧光粉对LED封装光源的影响研究[J].光电技术应用,2014,29(4):21-23.
[8]田立新,文尚胜,姚日晖,等.基于开缝基板的大功率LED散热性能研究[J].光学学报,2014,34(11):1123002.
[9]沈晓霞,蔡履中,董国艳,等.光子晶体LED结构优化设计对光提取效率的影响[J].中国激光,2014,41(s1):s106006.
[10]殷录桥,翁菲,宋朋,等.LED芯片与YAG荧光粉的相互热作用[J].光学学报,2014,34(3):0323002.
[11]张建新,牛萍娟,李红月,等.基于等效热路法的LED阵列散热性能研究[J].发光学报,2013,34(4):516-522.
[12]叶钊,王超,曹启鹏,等.LED阵列用作定标光源的照明均匀性研究[J].中国激光,2014,41(s1):s116007.
[13]邹军,李杨,朱伟,等.立体发光LED灯片的光学性能研究[J].发光学报,2015,36(6):12-15.
[14]王成,彭小利,宋乐义,等.95陶瓷散热基片生产中若干质量问题[J].真空电子技术,2006(4):78-81.
[15]王静,吴福根.改善大功率LED散热的关键问题[J].电子设计工程,2009,17(4):123-125.
[16]Liu Dongjing,Yang Haiying,Yang Ping.Experimental and numerical approach on junction temperature of high-power LED[J].Microelectronics Reliability,2014,54(5):926-931.
[17]张楼英,吕广才,杨金红.照明用大功率LED的封装与出光[J].电子元器件应用,2009,11(9):85-87.
[18]钱可元,郑代顺,罗毅.GaN基功率型LED芯片散热性能测试与分析[J].半导体光电,2006,27(3):236-239.
[19]李爱玉,朱文章.大功率LED封装散热关键问题的仿真[J].厦门理工学院学报,2011,19(4):10-13.
[20]马湘君,吴礼刚,戴世勋等.大功率LED筒灯散热分析[J].照明工程学报,2011,22(6):18-21.
[2]李柏承,张大伟,黄元申,等.功率型白光LED封装设计的研究进展[J].激光与光电子学进展,2009,46(9).
[3]Yin Stuart(Shizhuo),Wang Chao,Zhu Wenbin,et al.Single chip super broadband InGaN/GaN LED enabled by nano structured substrate[J].Optics Express,2014,22(S5):A1380-A1388.
[4]文峰,刘德明,黄黎蓉,等.直接出射白光的新型发光二极管[J].光学与光电技术,2006,4(3):21-24.
[5]李杨,董素素,王艺燃,等.垂直结构LED和倒装结构LED的发光特性研究[J].光电技术应用,2014,29(5):47-51.
[6]王艺燃,李月峰,邹军.白光LED加速老化性能分析[J].中国照明电器,2014,(10):43-46.
[7]张生冬,王凤超,邹军.不同粒径YAG荧光粉对LED封装光源的影响研究[J].光电技术应用,2014,29(4):21-23.
[8]田立新,文尚胜,姚日晖,等.基于开缝基板的大功率LED散热性能研究[J].光学学报,2014,34(11):1123002.
[9]沈晓霞,蔡履中,董国艳,等.光子晶体LED结构优化设计对光提取效率的影响[J].中国激光,2014,41(s1):s106006.
[10]殷录桥,翁菲,宋朋,等.LED芯片与YAG荧光粉的相互热作用[J].光学学报,2014,34(3):0323002.
[11]张建新,牛萍娟,李红月,等.基于等效热路法的LED阵列散热性能研究[J].发光学报,2013,34(4):516-522.
[12]叶钊,王超,曹启鹏,等.LED阵列用作定标光源的照明均匀性研究[J].中国激光,2014,41(s1):s116007.
[13]邹军,李杨,朱伟,等.立体发光LED灯片的光学性能研究[J].发光学报,2015,36(6):12-15.
[14]王成,彭小利,宋乐义,等.95陶瓷散热基片生产中若干质量问题[J].真空电子技术,2006(4):78-81.
[15]王静,吴福根.改善大功率LED散热的关键问题[J].电子设计工程,2009,17(4):123-125.
[16]Liu Dongjing,Yang Haiying,Yang Ping.Experimental and numerical approach on junction temperature of high-power LED[J].Microelectronics Reliability,2014,54(5):926-931.
[17]张楼英,吕广才,杨金红.照明用大功率LED的封装与出光[J].电子元器件应用,2009,11(9):85-87.
[18]钱可元,郑代顺,罗毅.GaN基功率型LED芯片散热性能测试与分析[J].半导体光电,2006,27(3):236-239.
[19]李爱玉,朱文章.大功率LED封装散热关键问题的仿真[J].厦门理工学院学报,2011,19(4):10-13.
[20]马湘君,吴礼刚,戴世勋等.大功率LED筒灯散热分析[J].照明工程学报,2011,22(6):18-21.