基于全息光刻系统制备528nm周期孔阵图形
|
摘要
基于Ga As衬底采用全息光刻和湿法刻蚀技术制备周期孔阵图形。得出全息光刻双曝光最优曝光时间为60 s。采用H3PO4∶H202∶H2O=1∶1∶10配比的刻蚀液,得出最佳刻蚀时间为30 s。扫描电子显微镜(SEM)和原子力显微镜(AFM)测试图片显示,孔阵周期为528 nm,刻蚀深度为124 nm,具有完美的表面形貌及良好均匀性和周期性。
The periodic hole array is fabricated on Ga As substrate by holographic lithography and wet etching. The double exposure in holographic lithography is adopted with optimized exposure time of 60 s. Wet etching solution with 1∶1∶10 volume ratio of H3PO4, H2O2 and H2O is adopted to etch the hole array for 30 s. Images of scanning electron microscopy(SEM) and atomic force microscopy(AFM) show that the hole array has a period of 528 nm,etching depth of 124 nm, with perfect surface morphology, good fringe continuity and uniformity.
The periodic hole array is fabricated on Ga As substrate by holographic lithography and wet etching. The double exposure in holographic lithography is adopted with optimized exposure time of 60 s. Wet etching solution with 1∶1∶10 volume ratio of H3PO4, H2O2 and H2O is adopted to etch the hole array for 30 s. Images of scanning electron microscopy(SEM) and atomic force microscopy(AFM) show that the hole array has a period of 528 nm,etching depth of 124 nm, with perfect surface morphology, good fringe continuity and uniformity.
引文
1 Xiao Yufei,Zhang Weiping,Huang Haihua,et al..Influence of function of metal grating shape on surface plasmon resonance[J].Chinese J Lasers,2013,40(11):1114001.肖钰斐,张卫平,黄海华,等.金属光栅结构对表面等离子体共振的影响[J].中国激光,2013,40(11):1114001.
2 Hu Jin,Pu Donglin,Wei Guojun,et al..A method of dot-matrix holography based on the diffraction grating and spatial light modulator[J].Chinese J Lasers,2014,41(6):0609001.胡进,浦东林,魏国军,等.基于衍射光栅和空间光调制器的点阵全息光刻方法[J].中国激光,2014,41(6):0609001.
3 Mindaugas Andruievicius.Methods and applications of optical holography[J].Materials Science(Medziagotyra),2011,17(4):371-375.
4 Ke Chunhe,Peng Zi′an,Chen Qilue,et al..Advance in field emission display[J].Vacuum Science And Technology,1997,17(2):119-128.柯春和,彭自安,陈其略,等.场发射平板显示器件的进展[J].真空科学与技术,1997,17(2):119-128.
5 Liu Yanbo,Min Guoquan,Song Zhitang,et al..Si2Sb2Te5based ultra-high-density PCRAM arrays fabricated by UV-IL[J].Micronanoelectronic Technology,2009,46(1):45-49.刘彦伯,闵国全,宋志棠,等.压印技术制备超高密度Si2Sb2Te5基相变存储阵列[J].微纳电子技术,2009,46(1):45-49.
6 Zhang Dongmei.Fabrication of 2D Photonic Crysta1 Templates by Holographic Lithography and Soft Lithography[D].Hangzhou:Zhejiang University,2007:1-33.张冬梅.基于全息光刻及软刻蚀技术制备二维光子晶体模板[D].杭州:浙江大学,2007:1-33.
7 Zhang Jin.Study on Laser Interferometric Lithography[D].Chengdu:Sichuan University,2003:3-25,109-115.张锦.激光干涉光刻技术[D].成都:四川大学,2003:3-25,109-115.
8 K J Klein Koerkamp,S Enoch,F B Segerink,et al..Strong influence of hole shape on extraordinary transmission through periodic arrays of subwavelength holes[J].Physical Review Letters,2004,92(18):183901.
9 He Dechun,Han Zhenhai.Study on multi-beam interference[J].Editorial Department of Hexi University,2006,22(2):42-44.贺德春,韩振海.多光束干涉的研究[J].河西学院学报,2006,22(2):42-44.
10 J Y Suh,E U Donev,R Lopez,et al..Modulated optical transmission of subwavalength hole arrays in metal-VO2films[J].Applied Physics Letters,2006,88(13):133115.
11 Ren Lin.Study on Laser Interferometric Lithography Technology[D].Jilin:Jinlin University,2007:23-57任琳.基于多光束相干的激光干涉光刻技术研究[D].吉林:吉林大学,2007:23-57.
12 Haofu Huang,Yuwei Jiang,Hung Hsin Chen,et al..Localized shape resonance on silver film perforated by H-shaped and more complex shape hole arrays[J].Optics Express,2011,19(6):5225-5231.
13 Wang Yichong.Research on the Limiting Feature Sizes of Laser Interference Lithography[D].Jilin:Changchun University of Science and Technology,2013:7-18.王一聪.激光干涉光刻的极限尺寸研究[D].吉林:长春理工大学,2013:7-18.
14 Li Wenhao,Zhang Chengshan,Ba Yingexige,et al..Study on precisely controlling the grating constant of holographic grating with Moire patter method[J].Chinese J Scientific Instrument,2013,34(12):2867-2873.李文昊,张成山,巴音格希格,等.莫尔条纹法精确控制全息光栅光栅常数的研究[J].中国仪器仪表学报,2013,34(12):2867-2873.
15 Liu Dandan,Wang Yong,Ye Zhen,et al..Grating fabrication of 808 nm distributed feedback semiconductor laser by holographic photolithography[J].Chinese J Lasers,2015,42(2):0202008.刘丹丹,王勇,叶镇,等.全息光刻制备808 nm分布反馈半导体激光器的光栅[J].中国激光,2015,42(2):0202008.
16 A R Clawson.Guide to references on III±V semiconductor chemical etching[J].Materials Science and Engineering,2000,31(2001):48-54.
17 Zhang Jian.Design,Growth and Fabrication of Near Infrared Semicomductor Laser Based on Ga As[D].Jilin:University of Chinese Axademy of Sciences,2013:77-89.张建.Ga As基近红外半导体激光器的设计、生长和制备研究[D].吉林:中国科学院大学,2013:77-79.
18 Yang Jianyi,Wang Minghua,Jiang Xiaoqing,et al..Selective etching of Ga As substrate[J].Journal of Optoelectronics·Laser,1998,9(1):51-53.杨建义,王明华,江晓清,等.Ga As衬底层选择性腐蚀技术[J].光电子·激光,1998,9(1):51-53.
2 Hu Jin,Pu Donglin,Wei Guojun,et al..A method of dot-matrix holography based on the diffraction grating and spatial light modulator[J].Chinese J Lasers,2014,41(6):0609001.胡进,浦东林,魏国军,等.基于衍射光栅和空间光调制器的点阵全息光刻方法[J].中国激光,2014,41(6):0609001.
3 Mindaugas Andruievicius.Methods and applications of optical holography[J].Materials Science(Medziagotyra),2011,17(4):371-375.
4 Ke Chunhe,Peng Zi′an,Chen Qilue,et al..Advance in field emission display[J].Vacuum Science And Technology,1997,17(2):119-128.柯春和,彭自安,陈其略,等.场发射平板显示器件的进展[J].真空科学与技术,1997,17(2):119-128.
5 Liu Yanbo,Min Guoquan,Song Zhitang,et al..Si2Sb2Te5based ultra-high-density PCRAM arrays fabricated by UV-IL[J].Micronanoelectronic Technology,2009,46(1):45-49.刘彦伯,闵国全,宋志棠,等.压印技术制备超高密度Si2Sb2Te5基相变存储阵列[J].微纳电子技术,2009,46(1):45-49.
6 Zhang Dongmei.Fabrication of 2D Photonic Crysta1 Templates by Holographic Lithography and Soft Lithography[D].Hangzhou:Zhejiang University,2007:1-33.张冬梅.基于全息光刻及软刻蚀技术制备二维光子晶体模板[D].杭州:浙江大学,2007:1-33.
7 Zhang Jin.Study on Laser Interferometric Lithography[D].Chengdu:Sichuan University,2003:3-25,109-115.张锦.激光干涉光刻技术[D].成都:四川大学,2003:3-25,109-115.
8 K J Klein Koerkamp,S Enoch,F B Segerink,et al..Strong influence of hole shape on extraordinary transmission through periodic arrays of subwavelength holes[J].Physical Review Letters,2004,92(18):183901.
9 He Dechun,Han Zhenhai.Study on multi-beam interference[J].Editorial Department of Hexi University,2006,22(2):42-44.贺德春,韩振海.多光束干涉的研究[J].河西学院学报,2006,22(2):42-44.
10 J Y Suh,E U Donev,R Lopez,et al..Modulated optical transmission of subwavalength hole arrays in metal-VO2films[J].Applied Physics Letters,2006,88(13):133115.
11 Ren Lin.Study on Laser Interferometric Lithography Technology[D].Jilin:Jinlin University,2007:23-57任琳.基于多光束相干的激光干涉光刻技术研究[D].吉林:吉林大学,2007:23-57.
12 Haofu Huang,Yuwei Jiang,Hung Hsin Chen,et al..Localized shape resonance on silver film perforated by H-shaped and more complex shape hole arrays[J].Optics Express,2011,19(6):5225-5231.
13 Wang Yichong.Research on the Limiting Feature Sizes of Laser Interference Lithography[D].Jilin:Changchun University of Science and Technology,2013:7-18.王一聪.激光干涉光刻的极限尺寸研究[D].吉林:长春理工大学,2013:7-18.
14 Li Wenhao,Zhang Chengshan,Ba Yingexige,et al..Study on precisely controlling the grating constant of holographic grating with Moire patter method[J].Chinese J Scientific Instrument,2013,34(12):2867-2873.李文昊,张成山,巴音格希格,等.莫尔条纹法精确控制全息光栅光栅常数的研究[J].中国仪器仪表学报,2013,34(12):2867-2873.
15 Liu Dandan,Wang Yong,Ye Zhen,et al..Grating fabrication of 808 nm distributed feedback semiconductor laser by holographic photolithography[J].Chinese J Lasers,2015,42(2):0202008.刘丹丹,王勇,叶镇,等.全息光刻制备808 nm分布反馈半导体激光器的光栅[J].中国激光,2015,42(2):0202008.
16 A R Clawson.Guide to references on III±V semiconductor chemical etching[J].Materials Science and Engineering,2000,31(2001):48-54.
17 Zhang Jian.Design,Growth and Fabrication of Near Infrared Semicomductor Laser Based on Ga As[D].Jilin:University of Chinese Axademy of Sciences,2013:77-89.张建.Ga As基近红外半导体激光器的设计、生长和制备研究[D].吉林:中国科学院大学,2013:77-79.
18 Yang Jianyi,Wang Minghua,Jiang Xiaoqing,et al..Selective etching of Ga As substrate[J].Journal of Optoelectronics·Laser,1998,9(1):51-53.杨建义,王明华,江晓清,等.Ga As衬底层选择性腐蚀技术[J].光电子·激光,1998,9(1):51-53.