TAIKO晶圆激光切环研究
|
摘要
随着科技的进步,近年来对超薄晶圆的需求日益增长,迪思科科技有限公司开发出一种新型的晶圆背面研磨技术——-TAIKO工艺。这项技术在对晶圆进行研磨时,仍保留晶片外围约3mm左右的边缘部分,只对圆内进行研磨薄型化,从而减少晶圆的翘曲,大大降低对了对后工序机台的传送要求及破片风险,满足了厚度小于100um的超薄晶加工需求。但是,这项技术同时也引入了新的问题需要处理。边缘3mm左右圆环的存在,使得常规的电性测量机台无法直接测量以及常规的切割机无测切割晶粒。本文讨论一种使用激光切割晶圆边缘圆环的方式,设计特殊的切割盘,便于分离切割下来的TAIKO晶圆边缘圆环,同时,采用正面不贴蓝膜的方式,节省工序,方便后面的继续加工。
With the progress of science and technology, the demand for ultra-thin wafers has been increasing in recent years. Diesco Technology Co., Ltd. has developed a new type of wafer back grinding technology-TAIKO process. When grinding wafers, this technology still retains the edge part about 3 mm around the wafer periphery, and only grinds the wafer thinly, thus reducing the warpage of wafers, greatly reducing the transmission requirements and fragmentation risks of the later stage, and meeting the processing requirements of ultra-thin crystals with thickness less than 100 um. However,this technology also introduces new problems that need to be addressed. The existence of a circle about 3 mm in the edge makes it impossible for conventional electrical measuring machine to measure grain directly and for conventional cutting machine to measure grain. In this paper, a laser cutting method of wafer edge rings is discussed. A special cutting disc is designed to separate the cut TAIKO wafer edge rings. At the same time, the method of no blue film on the front is adopted to save the working procedure and facilitate the subsequent processing.
With the progress of science and technology, the demand for ultra-thin wafers has been increasing in recent years. Diesco Technology Co., Ltd. has developed a new type of wafer back grinding technology-TAIKO process. When grinding wafers, this technology still retains the edge part about 3 mm around the wafer periphery, and only grinds the wafer thinly, thus reducing the warpage of wafers, greatly reducing the transmission requirements and fragmentation risks of the later stage, and meeting the processing requirements of ultra-thin crystals with thickness less than 100 um. However,this technology also introduces new problems that need to be addressed. The existence of a circle about 3 mm in the edge makes it impossible for conventional electrical measuring machine to measure grain directly and for conventional cutting machine to measure grain. In this paper, a laser cutting method of wafer edge rings is discussed. A special cutting disc is designed to separate the cut TAIKO wafer edge rings. At the same time, the method of no blue film on the front is adopted to save the working procedure and facilitate the subsequent processing.
引文
[1]黄福民,谢小柱,魏昕,等.半导体晶圆激光切割新技术[J],激光技术,2012年第36卷第3期.
[2]王凯,梁庭,雷程,李颖.CO2激光器加工晶圆切缝控制工艺研究[J].传感器与微系统,2013年第32卷第3期.
[3]王仲康.超薄化芯片[J].电子工业专用设备,2006年11期.
[4]康仁科,郭东明,霍风伟,金洙吉.大尺寸硅片背面磨削技术的应用与发展[J].半导体技术,2003年09期.
[5]Michael Quirk,Julian Serda.韩郑生.等译.半导体制造技术[M].北京:电子工业出版社,2004.
[2]王凯,梁庭,雷程,李颖.CO2激光器加工晶圆切缝控制工艺研究[J].传感器与微系统,2013年第32卷第3期.
[3]王仲康.超薄化芯片[J].电子工业专用设备,2006年11期.
[4]康仁科,郭东明,霍风伟,金洙吉.大尺寸硅片背面磨削技术的应用与发展[J].半导体技术,2003年09期.
[5]Michael Quirk,Julian Serda.韩郑生.等译.半导体制造技术[M].北京:电子工业出版社,2004.