功率MOSFET寿命预测技术研究
|
摘要
电子元器件是电子设备的基础,是不能再进行分割的基本单元,因此电子元器件的寿命在一定程度上决定了电子设备的使用寿命。功率MOSFET是所有元器件中使用最广泛的品种之一,数据统计表明,功率MOSFET是电子设备中失效率最高的元器件,整个寿命周期以性能退化失效为主。以MOSFET器件为例,模拟器件的使用环境、电压、电流,同时不断对试验过程中的器件进行测试,通过对测试数据进行分析,确定器件的敏感参数,建立以敏感参数为主的退化模型,从而估算元器件的寿命。
Electronic component is the foundation of electronic equipment,which being the basic unit,cannot be further divided.Therefore,to a certain extent,the lifetime of electronic components determines the service life of electronic equipments.Power MOSFET is one of the most widely used varieties in all components,according to the statistics,the power MOSFET is of the highest failure rate of components in electronic equipments,and its main failure form is with performance degradation.Taking MOSFET devices as an example,the use environment,voltage and current of the components are simulated,and at the same time,by keeping doing the tests during the experiment,analyzing the test data,determining the sensitive parameters of the components,and establishing the degradation model mainly with sensitive parameters,the lifetime of components is thus estimated.
Electronic component is the foundation of electronic equipment,which being the basic unit,cannot be further divided.Therefore,to a certain extent,the lifetime of electronic components determines the service life of electronic equipments.Power MOSFET is one of the most widely used varieties in all components,according to the statistics,the power MOSFET is of the highest failure rate of components in electronic equipments,and its main failure form is with performance degradation.Taking MOSFET devices as an example,the use environment,voltage and current of the components are simulated,and at the same time,by keeping doing the tests during the experiment,analyzing the test data,determining the sensitive parameters of the components,and establishing the degradation model mainly with sensitive parameters,the lifetime of components is thus estimated.
引文
[1]Reliabulity Maintainability Terms GB3187-94[S].1996.
[2]Wang Yunhui.Electronic Components Reliability Design[M]Beijing:Science Press,2007.
[3]Chen Shijie.Research of Degradation Model and Lifetime Prognosis Method for Power MOSFET[D].Harbin:Harbin Institute of Technology,2013.
[4]Test Method and Procedure of Microelectronic Device GJB548B-2005[S].1996.
[5]A.Grall Berenguer,L.dieulle.A Condition-based Maintenance Policy for Stochastically Deteriorating Systems[M].Reliability ngineering and Systerm Safety,2002.
[6]Jay Lee,Jun Ni,Dragan Djurdjanovic.Intelligent Prognostics Tools and Emaintenance[M].Computers in Industry,2006.
[7]Li Qiuyang.Research on Power MOSFET Model for Reliability Analysis[D]Harbin:Harbin Institute of Technology,2012.
[8]Meng Juqing Liu Haibo.Semiconductor Device Physics[M].Beijing:Science Press 2005.
[2]Wang Yunhui.Electronic Components Reliability Design[M]Beijing:Science Press,2007.
[3]Chen Shijie.Research of Degradation Model and Lifetime Prognosis Method for Power MOSFET[D].Harbin:Harbin Institute of Technology,2013.
[4]Test Method and Procedure of Microelectronic Device GJB548B-2005[S].1996.
[5]A.Grall Berenguer,L.dieulle.A Condition-based Maintenance Policy for Stochastically Deteriorating Systems[M].Reliability ngineering and Systerm Safety,2002.
[6]Jay Lee,Jun Ni,Dragan Djurdjanovic.Intelligent Prognostics Tools and Emaintenance[M].Computers in Industry,2006.
[7]Li Qiuyang.Research on Power MOSFET Model for Reliability Analysis[D]Harbin:Harbin Institute of Technology,2012.
[8]Meng Juqing Liu Haibo.Semiconductor Device Physics[M].Beijing:Science Press 2005.