功率VDMOS(带氮化硅结构)的UIS失效改善
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摘要
功率VDMOS器件是最为普遍的开关器件。而UIS发生过程是指功率VDMOS器件在整个系统中所能承受的最严峻电应力以及热应力的考验过程,所以抵抗UIS失效能力成为衡量其可靠性的重要指标。针对UIS的测试方法和机理做了简单的介绍,同时针对某款功率VDMOS产品的UIS改善方案进行了详细的描述。
The device of power VDMOS is the most common switching device.While the UIS process refers to the power VDMOS device in the whole system can withstand the most severe test process of the electric stress and thermal stress, so the ability to resist the UIS failure has become an important indicator to measure its reliability. This paper briefly introduces the testing method and mechanism of UIS, and describes the UIS improvement scheme of a power VDMOS product in detail.
The device of power VDMOS is the most common switching device.While the UIS process refers to the power VDMOS device in the whole system can withstand the most severe test process of the electric stress and thermal stress, so the ability to resist the UIS failure has become an important indicator to measure its reliability. This paper briefly introduces the testing method and mechanism of UIS, and describes the UIS improvement scheme of a power VDMOS product in detail.
引文
[1]康锡娥,郜月兰.功率MOSFET非钳位感性开关测试方法的研究[J].电子制作,2015,12:31.
[2]刘松,葛小荣.理解功率MOSFET的UIS及雪崩能量[J].今日电子,2010,04:52-54.
[3]马万里,赵文魁.VDMOS的UIS能力与制造工艺流程的关系[J].微电子学,2012,02:285-287.
[4]任敏,郭绪阳,邓光敏,李泽宏,张金平,高巍,张波.功率DMOS UIS失效改善及机理[J].中国科技论文在线,2014:1-6.
[5]顾晓健.关于改善功率MOSFET器件的UIS测试能力的方法研究[D].上海:上海交通大学,2008:4-10.
[6]邓光敏.采用挖槽填充工艺的DMOS的雪崩能量研究[D].成都:电子科技大学,2013:5-20.
[7]娄靖超.功率MOSFET的UIS特性研究[D].成都:电子科技大学,2009:3-20.
[8]刘宗贺,方雪冰,王泗禹,李杰,刘玮.Pbody浓度对VDMOS器件EAS特性的影响[J].硅谷,2011(12):63-64.
[2]刘松,葛小荣.理解功率MOSFET的UIS及雪崩能量[J].今日电子,2010,04:52-54.
[3]马万里,赵文魁.VDMOS的UIS能力与制造工艺流程的关系[J].微电子学,2012,02:285-287.
[4]任敏,郭绪阳,邓光敏,李泽宏,张金平,高巍,张波.功率DMOS UIS失效改善及机理[J].中国科技论文在线,2014:1-6.
[5]顾晓健.关于改善功率MOSFET器件的UIS测试能力的方法研究[D].上海:上海交通大学,2008:4-10.
[6]邓光敏.采用挖槽填充工艺的DMOS的雪崩能量研究[D].成都:电子科技大学,2013:5-20.
[7]娄靖超.功率MOSFET的UIS特性研究[D].成都:电子科技大学,2009:3-20.
[8]刘宗贺,方雪冰,王泗禹,李杰,刘玮.Pbody浓度对VDMOS器件EAS特性的影响[J].硅谷,2011(12):63-64.