功率MOSFET雪崩能量测试研究
|
摘要
现如今,功率MOSFET在电子电力设备中应用十分广泛,随着不断的发展,至今已成为工业领域最重要的器件之一,因此由于它而引起的整机失效也越来越常见。分析MOSFET失效的原因和后果,对于它的进一步发展应用具有重要的意义。在电源应用中的MOSFET,多为感性负载应用,电流为线性变化,不存在突变电流,电流能力并不是其失效重点;电压方面,由于变压器、电感的反向电动势,会造成MOSFET漏源之间承受极高的电压,因此反向电压击穿是MOSFET的主要失效模式,此时就需要考虑器件的雪崩能力。本文主要针对雪崩击穿的原理、雪崩能量的测试方法、影响雪崩测试的因素、雪崩击穿的具体失效模式进行分析讨论。
Nowadays, power MOSFET is widely used in power electronic equipment. With the continuous development, it has become one of the most important devices in the industrial field, so the failure of the whole machine caused by it is more and more common. The analysis of the causes and consequences of MOSFET failure is of great significance for its further development and application. In the application of power supply, MOSFET is mostly used for inductive load, the current is linear, there is no mutation current, and the current capacity is not the key point of failure. In terms of voltage, due to the reverse EMF of transformer and inductor, it will cause extremely high voltage between MOSFET's drain and source, so reverse voltage breakdown is the main failure mode of MOSFET, the avalanche capability of the device needs to be considered at this time. This paper is mainly discussed about the principles of avalanche breakdown, testing methods of avalanche energy, factors affecting avalanche test and specific failure modes of avalanche breakdown.
Nowadays, power MOSFET is widely used in power electronic equipment. With the continuous development, it has become one of the most important devices in the industrial field, so the failure of the whole machine caused by it is more and more common. The analysis of the causes and consequences of MOSFET failure is of great significance for its further development and application. In the application of power supply, MOSFET is mostly used for inductive load, the current is linear, there is no mutation current, and the current capacity is not the key point of failure. In terms of voltage, due to the reverse EMF of transformer and inductor, it will cause extremely high voltage between MOSFET's drain and source, so reverse voltage breakdown is the main failure mode of MOSFET, the avalanche capability of the device needs to be considered at this time. This paper is mainly discussed about the principles of avalanche breakdown, testing methods of avalanche energy, factors affecting avalanche test and specific failure modes of avalanche breakdown.
引文
[1]刘松,杨营.功率MOSFET雪崩能量及雪崩失效分析[J].电子技术应用,2016,42(4):132-134..
[2]康锡娥,郜月兰.功率MOSFET非钳位感性开关测试方法的研究[J].电子制作,2015,(12):37.
[3]秦苏梅.VDMOSFET器件的结构及工艺优化对UIS雪崩耐量的影响[J].黑龙江科技信息,2017,(16):55-56.
[4]Miguel Hinojosa,Stephen Bayne,Victor Veliadis,Damian Urciuoli.Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors[J].Materials Science Forum,2012,717-720:1025-1028.
[5]Edward Namkyu Cho,Yong Hyeon Shin,Ilgu Yun.An analytical avalanche breakdown model for double gate MOSFET[J].Microelectronics Reliability,2015,55(1):38–41.
[2]康锡娥,郜月兰.功率MOSFET非钳位感性开关测试方法的研究[J].电子制作,2015,(12):37.
[3]秦苏梅.VDMOSFET器件的结构及工艺优化对UIS雪崩耐量的影响[J].黑龙江科技信息,2017,(16):55-56.
[4]Miguel Hinojosa,Stephen Bayne,Victor Veliadis,Damian Urciuoli.Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors[J].Materials Science Forum,2012,717-720:1025-1028.
[5]Edward Namkyu Cho,Yong Hyeon Shin,Ilgu Yun.An analytical avalanche breakdown model for double gate MOSFET[J].Microelectronics Reliability,2015,55(1):38–41.