低导通电阻4H-SiC光导开关
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摘要
研制了以4H-SiC为基底材料的同面型光导开关,研究了磷离子注入对器件性能的影响。测试结果表明,采用磷离子注入能够有效降低电极处的体电阻,光导开关单位电极间隙的最小导通电阻为3.17!/mm。实验研究了偏置电压和光脉冲能量对导通电阻的影响,在偏置电压10kV、光能量为30.5mJ的条件下,器件的输出功率超过2.0 MW。结果表明,研制的开关具有输出波形稳定、抖动小、功率大等特点。
4H-SiC photoconductive switches with a lateral geometry are fabricated.Phosphate ion implantation is adopted to decrease the resistance.The results show that phosphate ion implantation can effectively reduce the resistance nearing the electrode and the minimum unit of the electrode gap on-state resistance is 3.17Ω/mm.This experiment shows the bias voltage and optical pulse energy how to effect the on-state resistance.The power of the device is more than 2.0MW when the bias voltage is10 kV and the energy of light is 30.5mJ.The characteristics of the switch output are stable,low jitter and high power.This is of importance to the application of silicon carbide photoconductive switch.
4H-SiC photoconductive switches with a lateral geometry are fabricated.Phosphate ion implantation is adopted to decrease the resistance.The results show that phosphate ion implantation can effectively reduce the resistance nearing the electrode and the minimum unit of the electrode gap on-state resistance is 3.17Ω/mm.This experiment shows the bias voltage and optical pulse energy how to effect the on-state resistance.The power of the device is more than 2.0MW when the bias voltage is10 kV and the energy of light is 30.5mJ.The characteristics of the switch output are stable,low jitter and high power.This is of importance to the application of silicon carbide photoconductive switch.
引文
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[16]孙艳玲,刘小龙,刘欢,等.光导开关非线性导通时的载流子累加效应[J].强激光与粒子束,2014,26:075002.(Sun Yanling,Liu Xiaolong,Liu Huan,et al.The carrier accumulation effect of nonlinear photoconductive semiconductor switches.High Power Laser and Particle Beams,2014,26:075002)
[17]郭辉.SiC器件欧姆接触的理论和实验研究[D].西安:西安电子科技大学,2007:19-26.(Guo Hui.Theoretical and experimental study on ohmic contacts to silicon carbide.Xian:Xian University,2007:19-26)
[2]Schoenberg J S H,Burger J W,Tyo J S,et al.Ultra-wideband source using gallium arsenide photoconductive semiconductor switches[J].IEEE Trans Plasma Science,1997,25(2):327-334.
[3]Prather W D,Baum C E,Lehr J M,et al.Ultra-wideband source antenna research[J].IEEE Trans Plasma Sci,2000,28(5):1624-1630.
[4]Loubriel G M,Zutavern F J,Baca A G,et al.Photoconductive semiconductor switches[J].IEEE Trans Plasma Sci,1997,25(2):124-130.
[5]Rahul G,David S G,Kapil K,et al.Radio-frequency heating of GaAs and SiC photoconductive switch for high-power applications[J].IEEE Trans Plasma Sci,2006,34(5):1697-1701.
[6]Doan S,Teke A,Huang D,et al.4H-SiC photoconductive switching devices for use in high-power applications[J].Applied Physics Letters,2003,82(18):3107-3109.
[7]Sun Yanling,Shi Shunxiang,Zhu Yanwu,et al.A new phenomenon in GaAs photoconductive semiconductor switches triggered by laser diode[J].Microwave and Optical Technology Letters,2007,49(9):2232-2234.
[8]崔海娟,杨宏春,阮成礼,等.GaAs光导开关锁定模式阈值条件[J].光学学报,2011,31:0213004.(Cui Haijuan,Yang Hongchun,Ruan Chengli,et al.Threshold conditions of GaAs photoconductive semiconductor switch operated in lock-on mode.Acta Optica Sinica,2011,31:0213004)
[9]吴朝阳,陈志刚,薛长江,等.激光二极管触发光导开关实验研究[J].强激光与粒子束,2012,24(3):635-638.(Wu Zhaoyang,Chen Zhigang,Xue Changjiang,et al.Experimental research on GaAs photoconductive semiconductor switches trigged by laser diode.High Power Laser and Particle Beams,2012,24(3):635-638)
[10]施卫,屈光辉,王馨梅.半绝缘GaAs光电导开关非线性电脉冲超快上升特性研究[J].物理学报,2009,58(1):477-481.(Shi Wei,Qu Guanghui,Wang Xinmei.Ultrafast rising of output electric impulse of lock-on model of semi-insulated GaAs photoconductive switches.Acta Physica Sinica,2009,58(1):477-481)
[11]Mauch D,Sullivan W,Bullick A,et al.Performance and characterization of a 20kV,contact face illuminated,silicon carbide photoconductive semiconductor switch for pulsed power applications[C]//Proc of the 16th IEEE International Pulsed Power Conference.2013:1-3.
[12]袁建强,李洪涛,刘宏伟,等.大功率光导开关研究[J].强激光与粒子束,2010,22(4):791-794.(Yuan Jianqiang,Li Hongtao,Liu Hongwei,et al.Study on high-power photoconductive semiconductor switches.High Power Laser and Particle Beams,2010,22(4):791-794)
[13]黄维,常少辉,陈之战,等.11kV大功率SiC光导开关导通特性[J].强激光与粒子束,2010,22(3):511-514.(Huang Wei,Chang Shaohui,Chen Zhizhan,et al.On-state characteristics of an 11kV high-power SiC photoconductive semiconductor switch.High Power Laser and Particle Beams,2010,22(3):511-514)
[14]Sullivan J S,Stanley J R.Wide bandgap extrinsic photoconductive switches[C]//Proc of the 16th IEEE International Pulsed Power Conference.2007:1040-1043.
[15]廖宇龙.碳化硅材料高功率光导开关研究[D].西安:西安电子科技大学,2009:21-34.(Liao Yulong.Study of high power silicon carbide photoconductive semiconductor switches.Xian:Xidian University,2009:21-34)
[16]孙艳玲,刘小龙,刘欢,等.光导开关非线性导通时的载流子累加效应[J].强激光与粒子束,2014,26:075002.(Sun Yanling,Liu Xiaolong,Liu Huan,et al.The carrier accumulation effect of nonlinear photoconductive semiconductor switches.High Power Laser and Particle Beams,2014,26:075002)
[17]郭辉.SiC器件欧姆接触的理论和实验研究[D].西安:西安电子科技大学,2007:19-26.(Guo Hui.Theoretical and experimental study on ohmic contacts to silicon carbide.Xian:Xian University,2007:19-26)