一种新结构硅TPJBS二极管的器件与工艺仿真
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摘要
为了满足电子与电气系统中较高反压快恢复二极管的应用需求,提出了一种硅沟槽P型结势垒肖特基复合二极管(TPJBS)新结构。对该TPJBS的正向导通特性和反向击穿特性进行了仿真试验、测试与优化,结果表明,与传统肖特基快恢复二极管(SBD)相比,经过优化的TPJBS器件的通态电流、导通电阻、通态压降等特性均有明显改善。其中,其反向泄漏电流密度降低了5~7个数量级,击穿电压则提高1倍多,更适用于需要较高反压快速恢复二极管的电子与电气系统的应用。为了验证该TPJBS的可制造性,采用半导体器件与工艺仿真软件TCAD对该TPJBS进行虚拟制造,结果表明,在目前的超薄片功率半导体工艺条件下,经过优化的TPJBS器件具有一定的可制造性。
In order to meet the application requirement on fast recovery diode with higher block voltage than that of conventional SBD in electronic and electrical systems,a novel trenched P-type silicon complex junction barrier Schottky diode(TPJBS)was proposed.A software of virtual semiconductor foundry-TCAD was adopted for device simulation experiments on its forward conduction and reverse breakdown characteristics,experimental results indicate that its on-state current density,on-state resistivity,on-state voltage drop were all improved obviously and its reverse leakage current density and breakdown voltage were much improve especially than those of corresponding SBD.Therefore,the proposed TPJBS is more suitable for electronic and electrical system applications witch desire fast recovery diode with higher block voltage.To evaluate the manufacturability of the proposed TPJBS,further process simulation was conducted and the virtual sample of the proposed TPJBS was fabricated,which demonstrated its full compatibility with the current power device technologies on super-thin wafer.
In order to meet the application requirement on fast recovery diode with higher block voltage than that of conventional SBD in electronic and electrical systems,a novel trenched P-type silicon complex junction barrier Schottky diode(TPJBS)was proposed.A software of virtual semiconductor foundry-TCAD was adopted for device simulation experiments on its forward conduction and reverse breakdown characteristics,experimental results indicate that its on-state current density,on-state resistivity,on-state voltage drop were all improved obviously and its reverse leakage current density and breakdown voltage were much improve especially than those of corresponding SBD.Therefore,the proposed TPJBS is more suitable for electronic and electrical system applications witch desire fast recovery diode with higher block voltage.To evaluate the manufacturability of the proposed TPJBS,further process simulation was conducted and the virtual sample of the proposed TPJBS was fabricated,which demonstrated its full compatibility with the current power device technologies on super-thin wafer.
引文
[1]张玉明,牛新军,张义门.SiC和Si混合PiN_Schottky二极管的模拟和设计[J].电力电子技术,2002,36(1):56-59.
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[8]陈刚,陈雪兰,柏松,等.4H_SiC外延中的缺陷及其对肖特基二极管的影响[J].半导体技术,2008,33(s1):247-249.
[9]王辉,琚伟伟,刘香茹,等.半导体SiC材料研究进展及其应用[J].科技创新导报,2008(1):8-9.
[10]崔晓英.SiC半导体材料和工艺的发展状况[J].电子产品可靠性与环境试验,2007,25(4):58-62.
[11]高桦.硅基功率JBS/MPS肖特基整流器的研制[D].兰州:兰州大学,2016.
[12]徐丹,殷景华.SBD势垒高度的影响因素[J].哈尔滨理工大学学报,2007,12(5):50-52.
[13]TSUI B Y,CHENG J C,LEE L S,et al.Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2insertion method[J].Japanese Journal of Applied Physics,2014,53:853-871.
[14]LIOU B W.Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures[J].Thin Solid Films,2009,517(24):6558-6564.
[15]李银娜.MPS二极管的研究[D].沈阳:沈阳工业大学,2014.
[2]BALIGA B J.The pinch rectifier:A low-forward-drop high-speed power diode[J].IEEE Electron Device Letters,1984,5(6):194-196.
[3]苗永斌,张玉明,张义门.碳化硅MPS:新一代功率开关二极管[J].微电子学,2004,34(2):116-121.
[4]张海鹏,齐瑞生,王德君,等.4H-SiC TPJBS二极管器件结构和器件仿真[J].电力电子技术,2011,45(9):35-37.
[5]赵正平.SiC新一代电力电子器件的进展[J].半导体技术,2013,38(2):81-88.
[6]朱梓悦,秦海鸿,董耀文,等.宽禁带半导体器件研究现状与展望[J].电气工程学报,2016,11(1):1-11.
[7]闫锐,杨霏,陈昊,等.4H-SiC SBD和JBS退火研究[J].微纳电子技术,2009,46(7):433-436.
[8]陈刚,陈雪兰,柏松,等.4H_SiC外延中的缺陷及其对肖特基二极管的影响[J].半导体技术,2008,33(s1):247-249.
[9]王辉,琚伟伟,刘香茹,等.半导体SiC材料研究进展及其应用[J].科技创新导报,2008(1):8-9.
[10]崔晓英.SiC半导体材料和工艺的发展状况[J].电子产品可靠性与环境试验,2007,25(4):58-62.
[11]高桦.硅基功率JBS/MPS肖特基整流器的研制[D].兰州:兰州大学,2016.
[12]徐丹,殷景华.SBD势垒高度的影响因素[J].哈尔滨理工大学学报,2007,12(5):50-52.
[13]TSUI B Y,CHENG J C,LEE L S,et al.Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2insertion method[J].Japanese Journal of Applied Physics,2014,53:853-871.
[14]LIOU B W.Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures[J].Thin Solid Films,2009,517(24):6558-6564.
[15]李银娜.MPS二极管的研究[D].沈阳:沈阳工业大学,2014.