纳米级自开关二极管的电学特性研究
|
摘要
纳米级自开关二极管是一种通过破坏器件表面对称性来实现整流特性的纳米级新型晶体管。首先通过建立In0.53Ga0.47As/In0.52Al0.48As纳米级自开关二极管的二维器件模型,采用蒙特卡罗方法,模拟了自开关器件的电子输运特性,根据该器件模型研究了在不同几何结构参数条件下的自开关器件的电学特性,并对影响器件电学特性的结构参数进行了仿真分析。结果表明,器件的I-V特性强烈地受到导电沟道宽度、沟槽宽度、沟道长度和表面态密度的影响,通过优化器件的结构参数可使器件获得更优越的整流特性。
The nanoscale self-switching diode(NSSD)presents a diode-like current-voltage(I-V)characteristic by simply tailoring the boundary of a narrow semiconductor channel to break its symmetry.By means of a semiclassical two-dimensional Monte Carlo technique to sdudy the electron transport properties of the device,a model of nanoscale self-switching diode based on In0.53Ga0.47As/In0.52Al0.48 As has been established.Effects of the channel width,the horizontal width,the channel length and the surface charge density on electrical characteristics of nanoscale self-switching diode are analyzed. Simulation results show that the NSSD's electrical characteristic is strongly influenced by the geometry parameters.The NSSD will exhibit more effective rectification characteristic by adjusting the geometry parameters.
The nanoscale self-switching diode(NSSD)presents a diode-like current-voltage(I-V)characteristic by simply tailoring the boundary of a narrow semiconductor channel to break its symmetry.By means of a semiclassical two-dimensional Monte Carlo technique to sdudy the electron transport properties of the device,a model of nanoscale self-switching diode based on In0.53Ga0.47As/In0.52Al0.48 As has been established.Effects of the channel width,the horizontal width,the channel length and the surface charge density on electrical characteristics of nanoscale self-switching diode are analyzed. Simulation results show that the NSSD's electrical characteristic is strongly influenced by the geometry parameters.The NSSD will exhibit more effective rectification characteristic by adjusting the geometry parameters.
引文
[1]Likharev K K.Single-electron devices and their applications[J].IEEE Proc.,1999,87(4):606-632.
[2]Westlund A,SangaréP,Ducournau G,et al.Terahertz detection in zero-bias InAs self-switching diodes at room temperature[J].Appl.Phys.Lett.,2013,103(13):133504.
[3]Roche B,Voisin B,Jehl X,et al.A tunable,dual mode field-effect or single electron transistor[J].Appl.Phys.Lett.,2012,100(3):032107.
[4]Van Kouwen M P,van Weert M H M,Reimer M E,et al.Single quantum dot nanowire photodetectors[J].Appl.Phys.Lett.,2010,97(11):113108.
[5]Cui Y,Zhong Z H,Wang D L,et al.High performance silicon nanowire field effect transistors[J].Nano Lett.,2003,3(2):149-152.
[6]Song A M,Missous M,Omling P,et al.Unidirectional electron flow in a nanometer-scale semiconductor channel:A self-switching device[J].Appl.Phys.Lett.,2003,83(9):1881-1883.
[7]Song A M,Maximov I,Seifert W,et al.Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry[J].Physica E:Low-dimensional Systems and Nanostructures,2004,21(2/4):1116-1120.
[8]Westlund A,I珘niguez-de-la-Torre I.On the effect ofδ-doping in self-switching diodes[J].Appl.Phys.Lett.,2014,105(9):093505.
[9]Kettle J,Whitelegg S,Song A M,et al.Fabrication of poly(3-hexylthiophene)self-switching diodes using thermal nanoimprint lithography and argon milling[J].J.Vac.Sci.Technol.B,2009,27:2801-2804.
[10]Majewski L A,Balocco C.Fast polymer nanorectifiers for inductively coupled RFID tags[J].Mater.Sci.Eng.,B,2008,147(2/3):289-292.
[11]Yang X H,Xu X L.Optically controlled quantum dot gated transistors with high on/off ratio[J].Appl.Phys.Lett.,2010,96(8):083503.
[12]Rowe M A,Salley G M,Gansen E J,et al.Analysis of photoconductive gain as it applies to single-photon detection[J].J.Appl.Phys.,2010,107(6):063110.
[13]Rowe M A,Gansen E J,Greene M,et al.Singlephoton detection using aquantum dot optically gated field-effect transistor with high internal quantum efficiency[J].Appl.Phys.Lett.,2006,89(25):253505.
[14]叶良修.小尺寸半导体器件的蒙特卡罗模拟[M].北京:科学出版社,1997:82-153.Ye Liangxiu.Monte Carlo Simulation on Small-size Semiconductor Devices[M].Beijing:Science Press,1997:82-153.
[15]吉利久.计算微电子学[M].北京:科学出版社,1996:150-352.Ji Lijiu.Computational Microelectronics[M].Beijing:Science Press,1996:150-352.
[16]Mateos J,Vasallo B G.Operation and high-frequency performance of nanoscale unipolar rectifying diodes[J].Appl.Phys.Lett.,2005,86:212103.
[17]In珘niguez-de-la-Torre I,Mateos J.Monte carlo analysis of noise spectra in self-switching nanodiodes.[J].J.Appl.Phys.,2008,103(2):024502.
[18]Xu K Y,Xiong J W,Song A M,et al.Effects of three-dimensional electric-field coupling on a sidegated nanotransistor[J].Semicond.Sci.Technol.,2011,26(9):095026.
[2]Westlund A,SangaréP,Ducournau G,et al.Terahertz detection in zero-bias InAs self-switching diodes at room temperature[J].Appl.Phys.Lett.,2013,103(13):133504.
[3]Roche B,Voisin B,Jehl X,et al.A tunable,dual mode field-effect or single electron transistor[J].Appl.Phys.Lett.,2012,100(3):032107.
[4]Van Kouwen M P,van Weert M H M,Reimer M E,et al.Single quantum dot nanowire photodetectors[J].Appl.Phys.Lett.,2010,97(11):113108.
[5]Cui Y,Zhong Z H,Wang D L,et al.High performance silicon nanowire field effect transistors[J].Nano Lett.,2003,3(2):149-152.
[6]Song A M,Missous M,Omling P,et al.Unidirectional electron flow in a nanometer-scale semiconductor channel:A self-switching device[J].Appl.Phys.Lett.,2003,83(9):1881-1883.
[7]Song A M,Maximov I,Seifert W,et al.Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry[J].Physica E:Low-dimensional Systems and Nanostructures,2004,21(2/4):1116-1120.
[8]Westlund A,I珘niguez-de-la-Torre I.On the effect ofδ-doping in self-switching diodes[J].Appl.Phys.Lett.,2014,105(9):093505.
[9]Kettle J,Whitelegg S,Song A M,et al.Fabrication of poly(3-hexylthiophene)self-switching diodes using thermal nanoimprint lithography and argon milling[J].J.Vac.Sci.Technol.B,2009,27:2801-2804.
[10]Majewski L A,Balocco C.Fast polymer nanorectifiers for inductively coupled RFID tags[J].Mater.Sci.Eng.,B,2008,147(2/3):289-292.
[11]Yang X H,Xu X L.Optically controlled quantum dot gated transistors with high on/off ratio[J].Appl.Phys.Lett.,2010,96(8):083503.
[12]Rowe M A,Salley G M,Gansen E J,et al.Analysis of photoconductive gain as it applies to single-photon detection[J].J.Appl.Phys.,2010,107(6):063110.
[13]Rowe M A,Gansen E J,Greene M,et al.Singlephoton detection using aquantum dot optically gated field-effect transistor with high internal quantum efficiency[J].Appl.Phys.Lett.,2006,89(25):253505.
[14]叶良修.小尺寸半导体器件的蒙特卡罗模拟[M].北京:科学出版社,1997:82-153.Ye Liangxiu.Monte Carlo Simulation on Small-size Semiconductor Devices[M].Beijing:Science Press,1997:82-153.
[15]吉利久.计算微电子学[M].北京:科学出版社,1996:150-352.Ji Lijiu.Computational Microelectronics[M].Beijing:Science Press,1996:150-352.
[16]Mateos J,Vasallo B G.Operation and high-frequency performance of nanoscale unipolar rectifying diodes[J].Appl.Phys.Lett.,2005,86:212103.
[17]In珘niguez-de-la-Torre I,Mateos J.Monte carlo analysis of noise spectra in self-switching nanodiodes.[J].J.Appl.Phys.,2008,103(2):024502.
[18]Xu K Y,Xiong J W,Song A M,et al.Effects of three-dimensional electric-field coupling on a sidegated nanotransistor[J].Semicond.Sci.Technol.,2011,26(9):095026.