高压固态断路设备均压技术研究
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摘要
高压直流输配电系统是解决可再生能源大规模接入的重要途径,而高压直流断路器已成为直流电网发展的瓶颈问题。传统的机械式断路器在断开负载时响应时间长、易产生电弧及寿命短,难以满足HVDC系统的速动性和可控性要求。研究基于Si C-MOSFET串并联的固态高压直流断路设备,深入分析其工作特性以及寄生参数对开关过程的影响,提出一种适用于Si C-MOSFET的改进型动态有源门极钳位网络,并通过仿真和试验验证了可行性。
High voltage direct current(HVDC)transmission system is an important solution for massive integration of renewable energy. However,HVDC breaker has been a bottleneck for the development of DC power grid. Traditional mechanical circuit breakers can not meet the requirements of quickness and controllability in HVDC system. Its breaking time is relatively long,and the arc is likely to occur when the load is disconnected,leading to short life. The solid-state HVDC breaker based on Si C-MOSFET connected in series and parallel was described,and its working characteristics and the effects of parasiticsin were analyzed. Meanwhile,the causes of the voltage imbalance of Si C-MOSFETs in series and parallel were analyzed,and an improved dynamic active gate clamped network for voltage equalization was designed. The feasibility is verified by simulation and experiment.
High voltage direct current(HVDC)transmission system is an important solution for massive integration of renewable energy. However,HVDC breaker has been a bottleneck for the development of DC power grid. Traditional mechanical circuit breakers can not meet the requirements of quickness and controllability in HVDC system. Its breaking time is relatively long,and the arc is likely to occur when the load is disconnected,leading to short life. The solid-state HVDC breaker based on Si C-MOSFET connected in series and parallel was described,and its working characteristics and the effects of parasiticsin were analyzed. Meanwhile,the causes of the voltage imbalance of Si C-MOSFETs in series and parallel were analyzed,and an improved dynamic active gate clamped network for voltage equalization was designed. The feasibility is verified by simulation and experiment.
引文
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[6] Nguyen T N,Jeannin P O,Vagnon E. Series Connection of IGBTs with Self-powering Technique and 3D Topology[J]. IEEE Transactionson Industrial Electronics,2011,47(4):1844-1852.
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[8]穆建国,王莉,胡杰.直流固态断路器拓扑结构的设计与分析[J].中国电机工程学报,2013,33(10):8-17.
[9] Palmer P,He W,Zhang X. IGBT Series Connection Under Active Voltage Control with Temporary Clamp[C]//IECON2012-38th Annual Conference on IEEE Industrial Electronics Society,Montreal,Canada:IEEE,2012:465-470.
[2] Peng C,Song X,Huang A Q. A Medium-voltage Hybrid DC Circuit Breaker—PartⅡ:Ultrafast Mechanical Switch[J].IEEE Journal of Emerging and Selected Topics in Power Electronics,2017,5(1):289-296.
[3] Li Y,Huang A Q,Motto K. Series and Parallel Operation of the Emitter Turn-off(ETO)Thyristor[J]. IEEE Transactions on Industry Applications,2002,38(3):706-712.
[4]王位,李卫超,林城美.大容量IGBT并联均流检测技术研究[J].电气传动,2017,47(6):71-76.
[5] Fabre J,Ladoux P. Parallel Connection of 1200 V/100 A Si CMOSFET Half-bridge Modules[J]. IEEE Transactions on Industry Applications,2016,52(2):1669-1676.
[6] Nguyen T N,Jeannin P O,Vagnon E. Series Connection of IGBTs with Self-powering Technique and 3D Topology[J]. IEEE Transactionson Industrial Electronics,2011,47(4):1844-1852.
[7] Wu X,Cheng S,Xiao Q. A 3600 V/80 A Series-parallel-connected Silicon Carbide MOSFETs Module with a Single External Gate Driver[J]. IEEE Transactions on Power Electronics,2014,29(5):2296-2306.
[8]穆建国,王莉,胡杰.直流固态断路器拓扑结构的设计与分析[J].中国电机工程学报,2013,33(10):8-17.
[9] Palmer P,He W,Zhang X. IGBT Series Connection Under Active Voltage Control with Temporary Clamp[C]//IECON2012-38th Annual Conference on IEEE Industrial Electronics Society,Montreal,Canada:IEEE,2012:465-470.