三角形对称罗森-莫尔斯势GaAs量子点杂质态的研究(英文)
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  • 英文篇名:Donor impurity states in a GaAs symmetrically trigonometric Rosen-Morse potential quantum dot
  • 作者:郭康贤 ; 胡美林 ; 张仲敏
  • 英文作者:GUO Kang-xian;HU Mei-lin;ZHANG Zhong-min;School of Physics and Electronic Engineering,Guangzhou University;
  • 关键词:杂质 ; 量子点 ; 压力 ; 温度
  • 英文关键词:impurity;;quantum dot;;pressure;;temperature
  • 中文刊名:GUDZ
  • 英文刊名:Journal of Guangzhou University(Natural Science Edition)
  • 机构:广州大学物理与电子工程学院;
  • 出版日期:2017-02-15
  • 出版单位:广州大学学报(自然科学版)
  • 年:2017
  • 期:v.16;No.91
  • 基金:Supported by the National Natural Science Foundation of China(61178003,61475039);; Guangdong Provincial Department of Science and Technology(2012A080304010,S2012010010115,2012A080304005);; Guangzhou Municipal Department of Education(12A005S)
  • 语种:英文;
  • 页:GUDZ201701006
  • 页数:6
  • CN:01
  • ISSN:44-1546/N
  • 分类号:40-45
摘要
在有效质量近似的框架内,利用变分法求解三角形对称罗森-莫尔斯势中砷化镓量子点的薛定谔方程.就杂质结合能作为势阱参数d、V_0,压力P,温度T和杂质位置zi的函数进行了计算,结果表明,杂质结合能深受d、V_0、P、T和zi的影响,在低维半导体量子系统的实验研究中,压力P和温度T应该被考虑在内.
        Within the framework of the effective mass approximation,the Schrdinger equation in a GaAs symmetrically trigonometric Rosen-Morse potential quantum dot is solved by means of a variational approach. The impurity binding energy has been calculated as a function of parameters of potential d,V_0,pressure P,temperature T and the impurity position z_i. It is found that the impurity binding energy is strongly affected by d,V_0,P,T and z_i. It is also worthwhile to point out that pressure P and temperature T should be considered in the experimental study of low-dimensional semiconductor quantum system.
引文
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