方石英籽晶辅助生长高效多晶硅的研究
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摘要
以熔融石英颗粒作为籽晶的全熔法铸锭工艺已成为当前高效多晶硅的重要生产方法。但由于熔融石英为异质籽晶且为无定形结构,因而其引晶效果并不理想。采用方石英籽晶代替生产所用的熔融石英籽晶辅助高效多晶硅的初期形核及晶粒生长。结果显示:硅锭底部的初始晶粒得到明显细化,其平均粒径缩小约15.7%,且晶粒尺寸更加均匀,位错密度较熔融石英铸锭降低了21.5%,相应电池片的平均转化效率绝对提升近0.1%。
Fused quartz particles have been widely used as heterogeneous seeds to assist the growth of high performance multicrystalline silicon( HP mc-Si) ingot in industry.However,the crystal quality is not ideal because of the heterogeneous and amorphous structure of the fused quartz seeds.Cristobalite particles instead of fused quartz seeds was used to assist nucleation and grain growth of the HP mc-Si ingot.Results showed that the initial grain size of the cristobalite seeded ingot was obviously refined. The average grain size decreased by 15. 7%,and the size was more uniform. The dislocation density reduced by 21. 5% in comparison with fused quartz seeded ingot,and the average conversion efficiency of the solar cells increased about 0. 1% in absolute value.
Fused quartz particles have been widely used as heterogeneous seeds to assist the growth of high performance multicrystalline silicon( HP mc-Si) ingot in industry.However,the crystal quality is not ideal because of the heterogeneous and amorphous structure of the fused quartz seeds.Cristobalite particles instead of fused quartz seeds was used to assist nucleation and grain growth of the HP mc-Si ingot.Results showed that the initial grain size of the cristobalite seeded ingot was obviously refined. The average grain size decreased by 15. 7%,and the size was more uniform. The dislocation density reduced by 21. 5% in comparison with fused quartz seeded ingot,and the average conversion efficiency of the solar cells increased about 0. 1% in absolute value.
引文
[1]LAN C W,YU W H,YANG Y M,et al.ROC Patent TWI452185B,2014.
[2]ZHU D D,LIANG M,HUANG M L,et al.Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification[J].Journal of crystal growth,2014,386(2):52.
[3]ZHANG H L,DA Y,HUANG C L,et al.Growth of multicrystalline silicon ingot with both enhanced quality and yield through quartz seeded method[J].Journal of crystal growth,2016,435,91.
[4]BRYNJULFSEN I,AMBERG L.Nucleation of silicon on Si3N4coated Si O2[J].Journal of crystal growth,2011,331(1):64.
[5]尹长浩,周海萍,黄新明,等.异质形核生长高效多晶硅[C]∥第13届中国光伏大会暨国际光伏展览会论文.常熟:[s.n.],2013.
[6]张军彦,吴洪坤,侯炜强,等.多晶硅高效硅锭引晶颗粒及其制备方法:CN104152990A[P].2014-11-19.
[7]郝保红,黄俊华.晶体生长机理的研究综述[J].北京石油化工学院学报,2006,14(2):58.
[8]唐宝莲,莫祥银.Si O2的开发应用现状[J].南京工业大学学报(自然科学版),1980,26(1):98.
[9]RYNINGEN B,STOKKAN G,KIVAMBE M,et al.Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots[J].Acta materialia,2011,59(20):7703.
[10]FUJIWARA K,PAN W,SAWADA K,et al.Directional growth method to obtain high quality polycrystalline silicon from its melt[J].Journal of crystal growth,2006,292(2):282.
[11]NAKAJIMA K,KUTSUKAKE K,FUJIWARA K,et al.Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic method by controlling thermal conductivity under crucibles[J].Journal of crystal growth,2011,319(1):13.
[12]STOKKAN G,HU Y,JUEL M,et al.Study of evolution of dislocation clusters in high performance multicrystalline silicon[J].Solar energy materials and solar cells,2014,130(20):679.
[2]ZHU D D,LIANG M,HUANG M L,et al.Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification[J].Journal of crystal growth,2014,386(2):52.
[3]ZHANG H L,DA Y,HUANG C L,et al.Growth of multicrystalline silicon ingot with both enhanced quality and yield through quartz seeded method[J].Journal of crystal growth,2016,435,91.
[4]BRYNJULFSEN I,AMBERG L.Nucleation of silicon on Si3N4coated Si O2[J].Journal of crystal growth,2011,331(1):64.
[5]尹长浩,周海萍,黄新明,等.异质形核生长高效多晶硅[C]∥第13届中国光伏大会暨国际光伏展览会论文.常熟:[s.n.],2013.
[6]张军彦,吴洪坤,侯炜强,等.多晶硅高效硅锭引晶颗粒及其制备方法:CN104152990A[P].2014-11-19.
[7]郝保红,黄俊华.晶体生长机理的研究综述[J].北京石油化工学院学报,2006,14(2):58.
[8]唐宝莲,莫祥银.Si O2的开发应用现状[J].南京工业大学学报(自然科学版),1980,26(1):98.
[9]RYNINGEN B,STOKKAN G,KIVAMBE M,et al.Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots[J].Acta materialia,2011,59(20):7703.
[10]FUJIWARA K,PAN W,SAWADA K,et al.Directional growth method to obtain high quality polycrystalline silicon from its melt[J].Journal of crystal growth,2006,292(2):282.
[11]NAKAJIMA K,KUTSUKAKE K,FUJIWARA K,et al.Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic method by controlling thermal conductivity under crucibles[J].Journal of crystal growth,2011,319(1):13.
[12]STOKKAN G,HU Y,JUEL M,et al.Study of evolution of dislocation clusters in high performance multicrystalline silicon[J].Solar energy materials and solar cells,2014,130(20):679.