K波段双通道集成CMOS发射前端芯片设计
|
摘要
采用TSMC 90 nm CMOS工艺,设计并实现了一款具有移相功能的K波段双通道集成发射前端芯片.该芯片主要由一个功率分配器、两组参数不同的有源移相器和功率放大器构成,同时在片上集成了用于控制移相器的数字模块.测试结果表明,在中心频点25 GHz处,两个通道的增益分别为19.1 dB和18.9 dB,输出1 dB压缩点分别为9.57 dBm和8.41 dBm,相位误差分别为1.38°和1.47°,供电电压为1.2 V,总功耗为0.32 W,芯片总面积为2.2 mm×1.25 mm.
A front-end chip with phase shift function was designed for K-band two-channel integrated transmitter and implemented in TSMC 90 nm CMOS technology. The chip consists of a power divider, two sets of active phase shifters and power amplifiers with different parameters. And a digital block was integrated on the chip to control phase shifters. Measurement results show that, at the center frequency 25 GHz, the gains of two channels are 19.1 dB and 18.9 dB, the output power 1 dB compression points of two channels are 9.57 dBm and 8.41 dBm, and the phase errors of two channels are 1.38° and 1.47° respectively. The power consumption is 0.32 W when the supply voltage is 1.2 V. The total chip area occupies 2.20 mm×1.25 mm.
A front-end chip with phase shift function was designed for K-band two-channel integrated transmitter and implemented in TSMC 90 nm CMOS technology. The chip consists of a power divider, two sets of active phase shifters and power amplifiers with different parameters. And a digital block was integrated on the chip to control phase shifters. Measurement results show that, at the center frequency 25 GHz, the gains of two channels are 19.1 dB and 18.9 dB, the output power 1 dB compression points of two channels are 9.57 dBm and 8.41 dBm, and the phase errors of two channels are 1.38° and 1.47° respectively. The power consumption is 0.32 W when the supply voltage is 1.2 V. The total chip area occupies 2.20 mm×1.25 mm.
引文
[1] Cao C H,Ding Y P,Yang X G,et al.A 24-GHz transmitter with on-chip dipole antenna in 0.13-μm CMOS[J].IEEE Journal of Solid-State Circuits,2008,43(6):1394-1402.
[2] Yang J,Pyo G,Kim C Y,et al.A 24-GHz CMOS UWB radar transmitter with compressed pulses[J].IEEE Transactions on Microwave Theory and Techniques,2012,60(4):1117-1125.
[3] Tan K W,Lo A H,Chu T S,et al.A K-band reconfigurable pulse-compression automotive radar transmitter in 90 nm CMOS[J].IEEE Transactions on Microwave Theory and Techniques,2015,63(4):1380-1387.
[4] Krishnaswamy H,Hashemi H.A 4-channel 24～27 GHz UWB phased array transmitter in 0.13 μm CMOS for vehicular radar[C]//IEEE Custom Integrated Circuits Conference.San Jose,USA:IEEE,2007:753-756.
[5] Natarajan A,Komijani A,Hajimiri A.A fully integrated 24-GHz phased-array transmitter in CMOS[J].IEEE Journal of Solid-State Circuits,2005,40(12):2502-2514.
[6] Tabesh M,Chen J S,Marcu C,et al A 65 nm CMOS 4-element sub-34 mW/element 60 GHz phased-array transceiver[J].IEEE Journal of Solid-State Circuits,2011,46(12):3018-3032.
[7] Kong L,Seo D,Alon E.A 50 mW-TX 65 mW-RX 60 GHz 4-element phased-array transceiver with integrated antennas in 65 nm CMOS[C]//IEEE International Solid-state Circuits Conference Digest of Technical Papers.San Francisco,USA:IEEE,2013:234-235.
[8] Pozar D M.Microwave engineering[M].3rd ed.New York:John Wiley & Sons,Inc.,2005.
[9] Razavi B.Design of analog CMOS integrated circuit[M].New York:McGraw-Hill Education,2000.
[10] Chan W L,Long J R.A 58～65 GHz neutralized CMOS power amplifier with PAE above 10% at 1 V supply[J].IEEE Journal of Solid-State Circuits,2010,45(3):554-564.
[11] Koh K J,Rebeiz G M.0.13-μm CMOS phase shifters for X-,Ku-,and K-Band phased arrays[J].IEEE Journal of Solid-State Circuits,2007,42(11):2535-2546.
[2] Yang J,Pyo G,Kim C Y,et al.A 24-GHz CMOS UWB radar transmitter with compressed pulses[J].IEEE Transactions on Microwave Theory and Techniques,2012,60(4):1117-1125.
[3] Tan K W,Lo A H,Chu T S,et al.A K-band reconfigurable pulse-compression automotive radar transmitter in 90 nm CMOS[J].IEEE Transactions on Microwave Theory and Techniques,2015,63(4):1380-1387.
[4] Krishnaswamy H,Hashemi H.A 4-channel 24～27 GHz UWB phased array transmitter in 0.13 μm CMOS for vehicular radar[C]//IEEE Custom Integrated Circuits Conference.San Jose,USA:IEEE,2007:753-756.
[5] Natarajan A,Komijani A,Hajimiri A.A fully integrated 24-GHz phased-array transmitter in CMOS[J].IEEE Journal of Solid-State Circuits,2005,40(12):2502-2514.
[6] Tabesh M,Chen J S,Marcu C,et al A 65 nm CMOS 4-element sub-34 mW/element 60 GHz phased-array transceiver[J].IEEE Journal of Solid-State Circuits,2011,46(12):3018-3032.
[7] Kong L,Seo D,Alon E.A 50 mW-TX 65 mW-RX 60 GHz 4-element phased-array transceiver with integrated antennas in 65 nm CMOS[C]//IEEE International Solid-state Circuits Conference Digest of Technical Papers.San Francisco,USA:IEEE,2013:234-235.
[8] Pozar D M.Microwave engineering[M].3rd ed.New York:John Wiley & Sons,Inc.,2005.
[9] Razavi B.Design of analog CMOS integrated circuit[M].New York:McGraw-Hill Education,2000.
[10] Chan W L,Long J R.A 58～65 GHz neutralized CMOS power amplifier with PAE above 10% at 1 V supply[J].IEEE Journal of Solid-State Circuits,2010,45(3):554-564.
[11] Koh K J,Rebeiz G M.0.13-μm CMOS phase shifters for X-,Ku-,and K-Band phased arrays[J].IEEE Journal of Solid-State Circuits,2007,42(11):2535-2546.