摘要
为实现894.6 nm低阈值、高稳定性、单模激光输出,设计了具有不同台面刻蚀结构的垂直腔面发射激光器(VCSEL)器件,研究了台面直径和氧化孔结构对器件激射性能的影响。研究结果表明:VCSEL台面直径越大,阈值电流越大;氧化孔径越偏向圆形,边模抑制比越高。制备了氧化孔为圆形、直径为4.4μm的VCSEL器件,该器件在70~90℃工作温度及0.6 mA驱动电流下实现了894.6 nm单模激光输出,边模抑制比高于35 dB。
In order to realize 894.6 nm single mode laser output with low threshold, high stability, we design vertical cavity surface emitting laser(VCSEL) devices with different mesa etching structure and study the influences of mesa diameter, oxide aperture shape and size on lasing performance. The research results show that the larger of the mesa in VCSEL device, the higher the threshold current; the more circular the oxide aperture, the higher the single mode suppression ratio. VCSEL devices with diameter of 4.4 μm circular oxide aperture is achieved, and the device can realize 894.6 nm single mode laser output with driving current of 0.6 mA and working temperature of 70-90 ℃, and the side mode suppression ratio is higher than 35 dB.
引文
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