全透明低回滞s-SWCNT/AgNW薄膜晶体管的可控制备
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摘要
利用高纯度、高均一性的半导体型单壁碳纳米管(s-SWCNT)网络薄膜作为薄膜晶体管的沟道材料,以高透明度、低薄膜电阻的银纳米线(Ag NW)网络薄膜作为源、漏电极,在玻璃基底上制备了大面积、高透明度的碳纳米管薄膜晶体管阵列,并使用聚甲基丙烯酸甲酯(PMMA)薄膜在器件表面通过干法封装获得了较低回滞的电子器件,得到了整体透明度达到82%以上的器件。提出的器件制备方法不仅制备材料易得,不需要高温过程,而且能够实现器件的大面积制备,对碳纳米管薄膜晶体管的全透明柔性化进程具有推进作用。
In this paper,using homogeneous and highly purified networks of semiconductor single-walled carbon nanotubes(s-SWCNTs)as the channel materials,and highly transparent and low sheet resistance networks of Ag nanowires(Ag NW)as the source and drain electrodes,large-area and transparent carbon nanotube thin film transistors were fabricated on glass substrates.Finally,polymethyl methacrylate(PMMA)thin films were used to dry-laminating encapsulate the devices to obtain low hysteresis carbon nanotube transistors.Devices with overall transparency of more than 82% were obtained.The proposed method is not only easy to prepare materials with no requirement of high temperature process,but also can achieve large area fabrication of devices,which plays an important role in promoting the fabrication of fully transparent and flexible carbon nanotube thin film transistors.
In this paper,using homogeneous and highly purified networks of semiconductor single-walled carbon nanotubes(s-SWCNTs)as the channel materials,and highly transparent and low sheet resistance networks of Ag nanowires(Ag NW)as the source and drain electrodes,large-area and transparent carbon nanotube thin film transistors were fabricated on glass substrates.Finally,polymethyl methacrylate(PMMA)thin films were used to dry-laminating encapsulate the devices to obtain low hysteresis carbon nanotube transistors.Devices with overall transparency of more than 82% were obtained.The proposed method is not only easy to prepare materials with no requirement of high temperature process,but also can achieve large area fabrication of devices,which plays an important role in promoting the fabrication of fully transparent and flexible carbon nanotube thin film transistors.
引文
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[3]Samant S S,Gopal A.Study of a prototype high quantum efficiency thick scintillation crystal video-electronic portal imaging device[J].Med.Phys.,2006,33:2783-2791.
[4]Zhang Jialu,Wang Chuan,Zhou Chongwu.Rigid/flexible transparent electronics based on separated carbon nanotube thin-film transistors and their application in display electronics[J].ACS Nano.,2012,6:7412-7419.
[5]Kim B S,Ju S,Back J H,et al.Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes[J].Adv.Mater.,2009,21:564-568.
[6]Yu W J,Lee S Y,Chae S H,et al.Small hysteresis nanocarbon-based integrated circuits on flexible and transparent plastic substrate[J].Nano.Lett.,2011,11:1344-1350.
[7]Chae S H,Yu W J,Bae J J,et al.Transferred wrinkled Al2O3for highly stretchable and transparent graphene-carbon nanotube transistors[J].Nat.Mater.,2013,12:403-410.
[8]Sangwan V K,Southard A,Moore T L,et al.Transfer printing approach to all-carbon nanoelectronics[J].Microelectron.Eng.,2011,88:3150-3154.
[9]Aikawa S,Einarsson E,Thurakitseree T,et al.Deformable transparent all-carbon-nanotube transistors[J].Appl.Phys.Lett.,2012,100:063502.
[10]Wu Falin,Li Pengcheng,Sun Kuan,et al.Conductivity enhancement of PEDOT∶PSS via addition of chloroplatinic acid and its mechanism[J].Adv.Electron.Mater.,2017,3(7):1700047.
[11]Zhang Chengpeng,Zhu Yuwen,Yi Peiyun,et al.Fabrication of flexible silver nanowire conductive films and transmittance improvement based on moth-eye nanostructure array[J].J.Micromech.Microeng.,2017,27:075010.
[12]Snell A J,Mackenzie K D,Spear W E,et al.Application of amorphous-silicon field effect transistors in addressable liquidcrystal display panels[J].Appl.Phys.,1981,24:357-362.
[13]Powell M J.The physics of amorphous-silicon thin-film transistors[J].IEEE Trans.Electron.Devices,1989,36:2753-2763.
[14]Pecora A,Maiolo L,Cuscuna M,et al.Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic[J].Solid State Electron.,2008,52:348-352.
[15]Forrest S R.The path to ubiquitous and low-cost organic electronic appliances on plastic[J].Nature,2004,428:911-918.
[16]Gelinck G H,Huitema H E A,Veenendaal E V,et al.Flexible active-matrix displays and shift registers based on solution-processed organic transistors[J].Nat.Mater.,2004,3:106-110.
[17]Lee S K,Kim B J,Jang H,et al.Stretchable graphene transistors with printed dielectrics and gate electrodes[J].Nano.Lett.,2011,11:4642-4646.
[18]Lee S K,Jang H Y,Jang S,et al.All graphene-based thin film transistors on flexible plastic substrates[J].Nano.Lett.,2012,12:3472-3476.
[19]Lee D,Seol M L,Moon D I,et al.High-performance thinfilm transistors produced from highly separated solutionprocessed carbon nanotubes[J].Appl.Phys.Lett.,2014,104:143508.
[20]Gu Jianting,Han Jie,Liu Dan,et al.Solution-processable high-purity semiconducting SWCNT for large-area fabrication of high-performance thin-film transistors[J].Small,2016,12:4993-4999.
[21]Yang Yi,Wang Zhongwu,Xu Zeyang,et al.Low hysteresis carbon nanotube transistors constructed via ageneral drylaminating encapsulation method on diverse surfaces[J].ACS Appl.Mater.Interfaces,2017,9:14292-14300.
[22]Ding Jianfu,Li Zhao,Lefebvre J,et al.A hybrid enrichment process combining conjugated polymer extraction and silica gel absorption for high purity semiconducting single-walled carbon nanotubes(SWCNT)[J].Nanoscale,2015,7:15741-15747.
[23]Pochorovski I,Wang Huiliang,Feldblyum J I,et al.Hbonded supramolecular polymer for the selective dispersion and subsequent release of large-diameter semiconducting single-walled carbon nanotubes[J].J.Am.Chem.Soc.,2015,137:4328-4331.
[24]Wang Chuan,Zhang Jialu,Zhou Chongwu.Macroelectronic integrated circuits using high-performance separated carbon nanotube thin-film transistors[J].ACS Nano.,2010,4:7123-7132.
[25]Wu Jiang,Que Xinglu,Hu Qin,et al.Multi-length scaled silver nanowire grid for application in efficient organic solar cells[J].Adv.Funct.Mater.,2016,26:4822-4828.