电离总剂量效应对浮栅型Flash存储器擦写耐久与数据保持特性的影响研究
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摘要
文章通过电离总剂量效应、擦写循环和数据保持试验及其叠加试验,研究了总剂量效应对浮栅型Flash存储器擦写耐久和数据保持特性的影响。对较高总剂量(150 krad(Si))和含动态偏置在内的多种偏置条件进行了评估。结果表明:总剂量效应对擦写特性的影响较小,甚至可以忽略;总剂量效应对数据保持的影响主要表现在辐射致电荷泄漏,若总剂量效应试验后刷新数据,则其影响几乎可以忽略。为了减小辐射致电荷泄漏对数据保持的影响,在系统级应用上建议增加数据刷新次数。
The impact of the total ionizing dose(TID) on the endurance and the data retention characteristics of the typical floating gate Flash is investigated experimentally by the TID test, the program/erase cycling, the data retention test, and their combinations. A relatively high total dose of 150 krad(Si), and various bias conditions including the dynamic bias, are introduced and evaluated. It is demonstrated that the impact of the TID on the endurance is nearly negligible. And the impact of the TID on the data retention is majorly reflected in the radiation-induced leakage current(RILC), and the impact can be ignored as long as the data is refreshed after the TID test. For the system-level applications, an increased number of data refreshings is suggested, to reduce the impact of the RILC on the data retention.
The impact of the total ionizing dose(TID) on the endurance and the data retention characteristics of the typical floating gate Flash is investigated experimentally by the TID test, the program/erase cycling, the data retention test, and their combinations. A relatively high total dose of 150 krad(Si), and various bias conditions including the dynamic bias, are introduced and evaluated. It is demonstrated that the impact of the TID on the endurance is nearly negligible. And the impact of the TID on the data retention is majorly reflected in the radiation-induced leakage current(RILC), and the impact can be ignored as long as the data is refreshed after the TID test. For the system-level applications, an increased number of data refreshings is suggested, to reduce the impact of the RILC on the data retention.
引文
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[15]Failure mechanisms and models for semiconductor devices:JEP122G[S].Joint Electron Device Engineering Council,2011:21-24
[16]CESCHIA M,PACCAGNELLA A,CESTER A,et al.Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxide[J].IEEETransactions on Nuclear Science,1998,45(6):2375-2382
[17]董艺,沈鸣杰,刘岐.浮栅器件和普通MOS器件总剂量效应对比研究[J].航天器环境工程,2018,35(5):468-472DONG Y,SHEN M J,LIU Q.Comparison of TID effect between floating gate device and MOS device[J].Spacecraft Environment Engineering,2018,35(5):468-472
[2]SROUR J R,PALKO J W.Displacement damage effects in irradiated semiconductor devices[J].IEEE Transactions on Nuclear Science,2013,60(6):1740-1766
[3]NGUYEN D N,GUERTIN S M,SWIFT G M,et al.Radiation effects on advanced flash memories[J].IEEETransactions on Nuclear Science,1999,46(6):1744-1750
[4]OLDHAM T R,FRIENLICH M,CARTS M A,et al.Effect of radiation exposure on the endurance of commercial NAND flash memory[J].IEEE Transactions on Nuclear Science,2009,56(6):3280-3284
[5]KYNETT V N,BAKER A,FANDRICH M L,et al.An insystem reprogrammable 32K×8 CMOS flash memory[J].IEEE Journal of Solid-state Circuits,1988,23(5):132-133
[6]PAVAN P,BEZ R,OLIVO P,et al.Flash memory cellsan overview[J].Proceedings of the IEEE,1997,85(8):1248-1271
[7]BEZ R,CAMERLENGHI E,MODELLI A,et al.Introduction to flash memory[J].Proceedings of the IEEE,2003,91(4):489-502
[8]王文双,费武雄.电离总剂量辐射试验流程阐述[J].电子产品可靠性与环境试验,2012,30(1):163-166WANG W S,FEI W X.Test process for total ionizing dose[J].Electronic Product Reliability and Environmental Testing,2012,30(1):163-166
[9]Electrically erasable programmable ROM(EEPROM)program/erase endurance and data retention stress test:JESD22-A117C[S].Joint Electron Device Engineering Council,2011:6
[10]HUGHES H L,BENEDETTO J M.Radiation effects and hardening of MOS technology:devices and circuits[J].IEEE Transactions on Nuclear Science,2003,50(3):500-521
[11]SHANFIELD Z,BROWN G A,REVESZ A G,et al.Anew MOS radiation-induced charge:negative fixed interface charge[J].IEEE Transactions on Nuclear Science,1992,39(2):303-307
[12]沈鸣杰.CMOS工艺集成电路抗辐射加固设计研究[D].上海:复旦大学,2005:13-14
[13]BENEDETTO J M,BOESCH H E,MCLEAN F B,et al.Hole removal in thin-gate MOSFET’s by tunneling[J].IEEE Transactions on Nuclear Science,1985,NS-32(6):3916-3920
[14]YAMADA S,HIURA Y,YAMANE T,et al.Degradation mechanism of flash EEPROM programming after program/erase cycles[C]∥Proceedings of IEEEInternational Electron Devices Meeting,1993:23-26
[15]Failure mechanisms and models for semiconductor devices:JEP122G[S].Joint Electron Device Engineering Council,2011:21-24
[16]CESCHIA M,PACCAGNELLA A,CESTER A,et al.Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxide[J].IEEETransactions on Nuclear Science,1998,45(6):2375-2382
[17]董艺,沈鸣杰,刘岐.浮栅器件和普通MOS器件总剂量效应对比研究[J].航天器环境工程,2018,35(5):468-472DONG Y,SHEN M J,LIU Q.Comparison of TID effect between floating gate device and MOS device[J].Spacecraft Environment Engineering,2018,35(5):468-472