HgI_2-HI-H_2O溶液中静电场诱导的α-碘化汞晶体生长
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摘要
在HgI_2-HI-H_2O溶液体系中,采用静电场诱导技术生长了HgI_2晶体。利用紫外-可见光谱分析了溶液中分子/离子的存在形式;通过改变电场强度和溶液浓度等因素,得到了不同形貌的HgI_2晶体。结果表明,HgI_2-HI-H_2O溶液中存在[HgI_3]~-,[HgI_4]~(2-)和HgI_2等3种主要成分。静电场诱导离子发生定向迁移,形成取向性生长的晶体,晶体形貌受电场诱导和结构因素(分子键力)共同制约。溶质(负离子)向正极迁移,形成颗粒度大的HgI_2晶体;负极主要是由中性HgI_2键合并相变形成的小颗粒HgI_2晶体。分析认为,HgI_2-HI-H_2O溶液中负离子可以成为晶体生长的基本单元。
The mechanism of α-HgI_2 growth by applying electric field in HgI_2-HI-H_2O solution was investigated.The specimen(molecular and/or ion) in solution was determined by UV-visible spectrometer; different morphology of mercuric iodide crystal grown were acquired by changing concentration in solution and applying electric field.The results show that constituents [HgI_3]~- and [HgI_4]~(2-) are identified in the solution, as well as HgI_2. Its crystallizing morphology is controlled by structure of HgI_2 crystal and applying electric field. The orientation growth appears by migration of growth unit(complexes) under applying electric field. Bigger grain in volume occurs in positive electrode, originated from migration of complexes, and increasement of HgI_2 concentration in local position in solution. While smaller one, bonding with mercuric iodide molecule is present in negative electrode. The discussions suggest that electronegative [HgI_3]~- and [HgI_4]~(2-) are also growth unit in solution.
The mechanism of α-HgI_2 growth by applying electric field in HgI_2-HI-H_2O solution was investigated.The specimen(molecular and/or ion) in solution was determined by UV-visible spectrometer; different morphology of mercuric iodide crystal grown were acquired by changing concentration in solution and applying electric field.The results show that constituents [HgI_3]~- and [HgI_4]~(2-) are identified in the solution, as well as HgI_2. Its crystallizing morphology is controlled by structure of HgI_2 crystal and applying electric field. The orientation growth appears by migration of growth unit(complexes) under applying electric field. Bigger grain in volume occurs in positive electrode, originated from migration of complexes, and increasement of HgI_2 concentration in local position in solution. While smaller one, bonding with mercuric iodide molecule is present in negative electrode. The discussions suggest that electronegative [HgI_3]~- and [HgI_4]~(2-) are also growth unit in solution.
引文
[1]Xu G,Li J Y,Nan R H,et al.J.Optoelectron.Adv.Mater.,2016,9-10:842-846
[2]Sellin P J.Nucl.Instrum.Methods Phys.Res.Sect.A,2003,513:332-339
[3]Piechotka M.Mater.Sci.Eng.,1997,18(1/2):1-18
[4]Zentai G,Schieber M,Partain L,et al.J.Cryst.Growth,2005,275(1/2):e1327-e1331
[5]Ayres F,Machado W V M,Justo J F,et al.Phys.B:Condens.Matter,2003,340-342:918-922
[6]Tang J T,Li D T,Feng Z X,et al.J.Alloys Compd.,2015,653:310-314
[7]Rao M R,Verma J K D,Patro A P.J.Phys.D:Appl.Phys.,1980,13:1545-1550
[8]Nicolau I F,Joly J P.J.Cryst.Growth,1980,48(1):61-73
[9]XU Gang(许岗),GU Zhi(谷智),WEI Shu-Min(魏淑敏).Journal of Functional Materials and Devices(功能材料与器件学报),2012,18(5):426-430
[10]XU Gang(许岗),GU Zhi(谷智),WEI Shu-Min(魏淑敏).Semiconductor Optoelectronics(半导体光电),2013,34(2):247-250
[11]Nicolau I F.J.Cryst.Growth,1980,48(1):51-60
[12]Cross E S,Buffleben G,Soria E,et al.Nucl.Instrum.Methods Phys.Res.Sect.A,1996,380(1/2):23-25
[13]Piechotka M,Kaldis E.Monatsh.Chem.,1987,118(2):137-153
[14]XU Gang(许岗),GUO Yan-Fei(郭炎飞),GU Zhi(谷智),et al.China Patent,201410082226.0.2014-03-07.
[15]Fornaro L,Luchini L,K觟ncke M,et al.J.Cryst.Growth,2000,217(3):263-270
[16]XU Gang(许岗),LI Jun-Ying(李俊英),GU Zhi(谷智),et al.Chinese J.Inorg.Chem.(无机化学学报),2016,32(7):1135-1140
[17]Bengtsson L A,Norén B,Stegemann H,et al.Acta Chem.Scand.,1995,49:391-398
[18]Jovan M N,Rajna H,Olga I M.Langmuir,1992,8(1):299-302
[2]Sellin P J.Nucl.Instrum.Methods Phys.Res.Sect.A,2003,513:332-339
[3]Piechotka M.Mater.Sci.Eng.,1997,18(1/2):1-18
[4]Zentai G,Schieber M,Partain L,et al.J.Cryst.Growth,2005,275(1/2):e1327-e1331
[5]Ayres F,Machado W V M,Justo J F,et al.Phys.B:Condens.Matter,2003,340-342:918-922
[6]Tang J T,Li D T,Feng Z X,et al.J.Alloys Compd.,2015,653:310-314
[7]Rao M R,Verma J K D,Patro A P.J.Phys.D:Appl.Phys.,1980,13:1545-1550
[8]Nicolau I F,Joly J P.J.Cryst.Growth,1980,48(1):61-73
[9]XU Gang(许岗),GU Zhi(谷智),WEI Shu-Min(魏淑敏).Journal of Functional Materials and Devices(功能材料与器件学报),2012,18(5):426-430
[10]XU Gang(许岗),GU Zhi(谷智),WEI Shu-Min(魏淑敏).Semiconductor Optoelectronics(半导体光电),2013,34(2):247-250
[11]Nicolau I F.J.Cryst.Growth,1980,48(1):51-60
[12]Cross E S,Buffleben G,Soria E,et al.Nucl.Instrum.Methods Phys.Res.Sect.A,1996,380(1/2):23-25
[13]Piechotka M,Kaldis E.Monatsh.Chem.,1987,118(2):137-153
[14]XU Gang(许岗),GUO Yan-Fei(郭炎飞),GU Zhi(谷智),et al.China Patent,201410082226.0.2014-03-07.
[15]Fornaro L,Luchini L,K觟ncke M,et al.J.Cryst.Growth,2000,217(3):263-270
[16]XU Gang(许岗),LI Jun-Ying(李俊英),GU Zhi(谷智),et al.Chinese J.Inorg.Chem.(无机化学学报),2016,32(7):1135-1140
[17]Bengtsson L A,Norén B,Stegemann H,et al.Acta Chem.Scand.,1995,49:391-398
[18]Jovan M N,Rajna H,Olga I M.Langmuir,1992,8(1):299-302