无凹槽AlGaN/GaN肖特基势垒二极管正向电流输运机制
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摘要
研究了无凹槽AlGaN/GaN肖特基势垒二极管(SBD)的正向电流输运机制。分别采用Ni/Au和TiN作为阳极金属材料制备了无凹槽AlGaN/GaN SBD,对比了两种SBD的直流特性。并通过测量器件的变温I-V特性,研究了器件的正向电流输运机制。结果表明,TiN-SBD(0.95 V@1 mA·mm~(-1))与Ni/Au-SBD(1.15 V@1 mA·mm~(-1))相比实现了更低的开启电压,从而改善了正向导通特性。研究发现两种SBD的势垒高度和理想因子都强烈依赖于环境温度,通过引入势垒高度的高斯分布模型解释了这种温度依赖性,验证了正向电流输运机制为与势垒高度不均匀分布相关的热电子发射机制。
The forward current transport mechanism of the recess-free AlGaN/GaN Schottky barrier diodes(SBDs) were studied. Recess-free AlGaN/GaN SBDs were fabricated by using Ni/Au and TiN as anode metal materials respectively, and the DC characteristics of two kinds of SBDs were compared. The forward current transport mechanism of the devices were studied by measuring the voltage-current characteristics at different temperatures. The results show that compared with the Ni/Au-SBD(1.15 V@1 mA·mm~(-1)), a lower turn-on voltage of the TiN-SBD(0.95 V@1 mA·mm~(-1)) is achieved and the forward conduction characteristic is improved. It is found that the potential barrier height and ideality factor of both SBDs are strongly depend on the ambient temperature. The temperature dependence is explained by introducing the Gaussian distribution model of the potential barrier height, and the forward current transport mechanism is verified as the thermionic-emission mechanism related to the inhomogeneous distribution of the potential barrier height.
The forward current transport mechanism of the recess-free AlGaN/GaN Schottky barrier diodes(SBDs) were studied. Recess-free AlGaN/GaN SBDs were fabricated by using Ni/Au and TiN as anode metal materials respectively, and the DC characteristics of two kinds of SBDs were compared. The forward current transport mechanism of the devices were studied by measuring the voltage-current characteristics at different temperatures. The results show that compared with the Ni/Au-SBD(1.15 V@1 mA·mm~(-1)), a lower turn-on voltage of the TiN-SBD(0.95 V@1 mA·mm~(-1)) is achieved and the forward conduction characteristic is improved. It is found that the potential barrier height and ideality factor of both SBDs are strongly depend on the ambient temperature. The temperature dependence is explained by introducing the Gaussian distribution model of the potential barrier height, and the forward current transport mechanism is verified as the thermionic-emission mechanism related to the inhomogeneous distribution of the potential barrier height.
引文
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[22] LI D B,SUN X J,SONG H,et al.Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors[J].Applied Physics Letters,2011,98(1):011108.
[23] MILLER E J,DANG X Z,YU E T.Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors[J].Journal of Applied Physics,2000,88(10):5951-5958.
[24] KHAN M.The transmission electron microscope [M].Pakistan:InTech,2012:103-106.
[2] KANG X W,WANG X H,HUANG S,et al.Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking [C]// Proceedings of IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).Chicago,IL,USA,2018:280-283.
[3] AO J P,YASUO O.Refractory metal nitride Schottky contact on GaN[J].半导体技术,2008,33(s1):75-79.
[4] SJOBLOM G,WESTLINDER J,OLSSON J.Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes [J].IEEE Transactions on Electron Devices,2005,52(10):2349-2352.
[5] TALLARICO A N,MAGNONE P,STOFFELS S,et al.On-state degradation in AlGaN/GaN-on-silicon Schottky barrier diodes:investigation of the geometry dependence[J].IEEE Transactions on Electron Devices,2016,63(9):3479-3486.
[6] MA J,ZANUZ D C,MATIOLI E.Field plate design for low leakage current in lateral GaN power Schottky diodes:role of the pinch-off voltage [J].IEEE Electron Device Letters,2017,38(9):1298-1301.
[7] WESTLINDER J,SCHRAM T,PANTISANO L,et al.On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices [J].IEEE Electron Device Letters,2003,24(9):550-552.
[8] 张金凤,郝跃.AlGaN/GaN 中二维电子气研究新进展[J].西安电子科技大学学报,2003,30(3):326-330.ZHANG J F,HAO Y.AlGaN/GaN two-dimensional gas:a critical review [J].Journal of Xidian University,2003,30 (3):326-330(in Chinese).
[9] 施敏,伍国珏.半导体器件物理 [M].耿莉,张睿智,译.3版.西安:西安交通大学出版社,2008:118-120.
[10] AMBACHER O.Growth and applications of group Ⅲ-nitrides [J].Journal of Physics:D,1998,31(20):2653-2710.
[11] ANWAR A F M,FARACLAS E W.Schottky barrier height in GaN/AlGaN heterostructures [J].Solid-State Electronics,2006,50(6):1041-1045.
[12] CHATTERJEE A,KHAMARI S K,DIXIT V K,et al.Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN[J].Journal of Applied Physics,2015,118(17):175703-1-175703-7.
[13] AKKAYA A,KARAASLAN T,DEDE M,et al.Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes[J].Thin Solid Films,2014,564:367-374.
[14] RAO P K,PARK B,LEE S T,et al.Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies[J].Journal of Applied Physics,2011,110(1):013716-1-013716-5.
[15] WERNER J H,GüTTLER H H.Barrier inhomogeneities at Schottky contacts[J].Journal of Applied Physics,1991,69(3):1522-1533.
[16] LI Y,NG G I,ARULKUMARAN S,et al.AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate[J].Physica Status Solidi:A,2017,214(3):1600555-1-1600555-7.
[17] WHEELER V D,ANDERSON T J,AHN S,et al.ALD TiN Schottky gates for improved electrical and thermal stability in Ⅲ-N devices [J].ECS Transactions,2017,80(3):17-25.
[18] SJOBLOM G,WESTLINDER J,OLSSON J.Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes[J].IEEE Transactions on Electron Devices,2005,52(10):2349-2352.
[19] TEKELI Z,ALTINDAL ?,?AKMAK M,et al.The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)—Al0.3Ga0.7N/AlN/GaN heterostructures at high temperatures[J].Journal of Applied Physics,2007,102(5):054510-1-054510-8.
[20] MAMOR M.Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts[J].Journal of Physics:Condensed Matter,2009,21(33):335802-1-335802-12.
[21] PERSANO A,PIO I,TASCO V,et al.Electrical pro-perties of planar AlGaN/GaN Schottky diodes:role of 2DEG and analysis of non-idealities[J].Journal of Applied Physics,2017,121(13):135701.
[22] LI D B,SUN X J,SONG H,et al.Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors[J].Applied Physics Letters,2011,98(1):011108.
[23] MILLER E J,DANG X Z,YU E T.Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors[J].Journal of Applied Physics,2000,88(10):5951-5958.
[24] KHAN M.The transmission electron microscope [M].Pakistan:InTech,2012:103-106.