Ni-CeO_2复合镀层厚度对δ-Ni_2Al_3-CeO_2/Ni-CeO_2涂层体系扩散行为的影响
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  • 英文篇名:Influence of Thickness of Electrodeposited Ni-CeO_2 Film on Interdiffusion of δ-Ni_2Al_3-CeO_2/Ni-CeO_2 Coating System and Substrate at High Temperature
  • 作者:谭晓晓 ; 孙丹 ; 范其香
  • 英文作者:TAN Xiaoxiao;SUN Dan;FAN Qixiang;Engineering Training Center,Shanghai University of Engineering Science;School of Materials Engineering,Shanghai University of Engineering Science;Tianjin Key Laboratory of High Speed Cutting and Precision Machining,Tianjin University of Technology and Education;
  • 关键词:铝化物涂层 ; 扩散障 ; 复合电镀 ; 退火 ; 互扩散
  • 英文关键词:aluminide coating;;diffusion barrier;;electroplating;;annealing;;interdiffusion
  • 中文刊名:FSFJ
  • 英文刊名:Corrosion Science and Protection Technology
  • 机构:上海工程技术大学工程实训中心;上海工程技术大学材料工程学院;天津职业技术师范大学高速切削与精密加工重点实验室;
  • 出版日期:2019-05-15
  • 出版单位:腐蚀科学与防护技术
  • 年:2019
  • 期:v.31
  • 基金:国家自然科学基金(51501109和51501130)~~
  • 语种:中文;
  • 页:FSFJ201903006
  • 页数:6
  • CN:03
  • ISSN:21-1264/TQ
  • 分类号:37-42
摘要
在Ni基体电沉积不同厚度的Ni-CeO_2复合镀层并对其进行620°C低温渗铝,制备了剩余复合镀层厚度分别约为10和45μm厚的δ-Ni_2Al_3-CeO_2/Ni-CeO_2涂层体系。1000°C真空退火5 h后,以上两种涂层体系均可在铝化物/镀层界面形成CeO_2富集层。但剩余复合镀层厚度为10μm的涂层体系由于氧化物富集程度不足,涂层退化程度较剩余复合镀层厚度为45μm的涂层体系严重。可见,在镀层氧化物颗粒含量一定的情况下,渗铝后剩余镀层厚度是影响扩散障有效性的重要因素。
        Ni-CeO_2 composite films with different thicknesses were electrodeposited on Ni substrate and then aluminized at 620 ℃. Accordingly, two coating(δ-Ni_2Al_3-CeO_2/Ni-CeO_2) systems consisted of an outer portion of δ-Ni_2Al_3-CeO_2 and an inner portion of remaining Ni-CeO_2 films of ca 10 and 45 μm respectively in thickness were prepared. After vacuum annealing at 1000 ℃ for 5 h, the above two coating systems all formed a CeO_2-rich layer in between the outer aluminide coating and the inner Ni-CeO_2 film. However, the degradation of the coating system with the inner Ni-CeO_2 film of 10 μm was more serious than that of 45 μm due to the insufficient oxides enrichment at the interface of aluminide/Ni-CeO_2. It can be seen that the thickness of the remaining inner Ni-CeO_2 film after aluminizing is an important factor responsible to the effectiveness of diffusion barrier for the prepared Ni-CeO_2 film containing a designed amount of CeO_2 particles.
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