基于单壁碳纳米管的压阻式柔性传感器
|
摘要
一维纳米材料与微结构结合的纳器件制造过程,实现了微纳加工工艺上的创新升级,有可能突破微米级器件的性能极限。首先利用传统的硅微加工技术,在综合性能优异的聚酰亚胺PI(Polyimide)薄膜上制作金(Au)微电极,形成排列有序的平行电极对;然后通过交流介电电泳的方法在微电极对间实现单壁碳纳米管SWNTs(Single-Walled Carbon Nanotubes)一维定向排布;接着采用区域选择性电沉积技术定域沉积Au压覆SWNTs,改善SWNTs与电极的接触特性。最后,针对基于SWNTs的柔性微纳传感器进行了力电特性测试。结果表明:在环境温度为(23±5)℃,湿度为65±15%RH,0.1 V工作电压下,压阻因子约为443,精度约为5.16%。上述研究结果在柔性微纳器件的制作方面显示了一定的应用前景,为实现超微型化和高功能密度化的柔性器件铺平道路。
Nano device manufacturing process,which is the combination of one-dimensional nanomaterials and microstructure,implements micro-nano processing technology innovation and upgrade. It will break through the performance limits of micron scale devices. First,parallel arrays of Au microelectrode couples are formed in an orderly manner by using traditional silicon micromachining technology on polyimide(PI)film,which has excellent comprehensive properties. Then,one dimensional orientation arrangement of Single-walled carbon nanotubes(SWNTs)is realized by alternating the current dielectrophoresis between the microelectrode couples. Next,regional selective electrodeposition technology is used to deposit localized Au and press over SWNTs,as well as to improve the contact properties of SWNTs with electrodes. Finally,the electro-mechanical characteristics of the flexible micro-nano sensor based on SWNTs are measured. Experimental results indicate that the sensor's gauge factor can reach higher than 400 with an accuracy of 5.16%,working voltage U=0.1 V,ambient temperature of(23±5)℃,and the humidity of 65±15%RH. The abovementioned results present a certain application prospect in the production of flexible micro-nano devices and will pave the way for ultra-miniaturization and high density function of flexible components.
Nano device manufacturing process,which is the combination of one-dimensional nanomaterials and microstructure,implements micro-nano processing technology innovation and upgrade. It will break through the performance limits of micron scale devices. First,parallel arrays of Au microelectrode couples are formed in an orderly manner by using traditional silicon micromachining technology on polyimide(PI)film,which has excellent comprehensive properties. Then,one dimensional orientation arrangement of Single-walled carbon nanotubes(SWNTs)is realized by alternating the current dielectrophoresis between the microelectrode couples. Next,regional selective electrodeposition technology is used to deposit localized Au and press over SWNTs,as well as to improve the contact properties of SWNTs with electrodes. Finally,the electro-mechanical characteristics of the flexible micro-nano sensor based on SWNTs are measured. Experimental results indicate that the sensor's gauge factor can reach higher than 400 with an accuracy of 5.16%,working voltage U=0.1 V,ambient temperature of(23±5)℃,and the humidity of 65±15%RH. The abovementioned results present a certain application prospect in the production of flexible micro-nano devices and will pave the way for ultra-miniaturization and high density function of flexible components.
引文
[1]Abot J L,Anike J C,Jean E,et al.Foil Strain Gauges Using Piezoresistive Carbon Nanotube Yarn:Fabrication and Calibration[J].Sensors,2018,18(2):464.
[2]Souri H,Yu J,Jeon H,et al.A Theoretical Study on the Piezoresistive Response of Carbon Nanotubes Embedded in Polymer Nanocomposites in an Elastic Region[J].Carbon,2017,120(5):427-437.
[3]Kim J S,Kim G W.Hysteresis Compensation of Piezoresistive Carbon Nanotube/Polydimethylsiloxane Composite-Based Force Sensors[J].Sensors,2017,17(2):229.
[4]Chen K,Gao W,Emaminejad S,et al.Printed Carbon Nanotube E-lectronics and Sensor Systems[J].Advanced Materials,2016,28(22):4397-4414.
[5]Qiu C,Zhang Z,Xiao M,et al.Scaling Carbon Nanotube Complementary Transistors to 5-nm Gate Lengths[J].Science,2017,355(6322):271-276.
[6]Yang Y,Ding L,Han J,et al.High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films[J].Acs Nano,2017,11(4):4124-4132.
[7]Han S J,Tang J,Kumar B,et al.High-Speed Logic Integrated Circuits with Solution-Processed Self-Assembled Carbon Nanotubes[J].Nature Nanotechnology,2017,12(9):861-865.
[8]Sharma A,Singh V,Bougher T L,et al.A Carbon Nanotube Optical Rectenna[J].Nature Nanotechnology,2015,10(12):1027-1032.
[9]Budhathokiuprety J,Langenbacher R E,Jena P V,et al.A Carbon Nanotube Optical Sensor Reports Nuclear Entry via a Noncanonical Pathway[J].Acs Nano,2017,11(4):3875-3882.
[10]Pfohl M,Tune D D,Graf A,et al.Fitting Single-Walled Carbon Nanotube Optical Spectra[J].Acs Omega,2017,2(3):1163-1171.
[11]Ruoff R S.Strong Bundles Based on Carbon Nanotubes[J].Nature Nanotechnology,2018,13(7):533-534.
[12]Kato Y,Horibe M,Ata S,et al.Stretchable Electromagnetic-Interference Shielding Materials Made of a Long Single-Walled CarbonNanotube-Elastomer Composite[J].Rsc Advances,2017,7(18):10841-10847.
[13]Shi J,Li X,Cheng H,et al.Graphene Reinforced Carbon Nanotube Networks for Wearable Strain Sensors[J].Advanced Functional Materials,2016,26(13):2078-2084.
[14]Liu Q,Chen J,Li Y,et al.High-Performance Strain Sensors with Fish-Scale-Like Graphene-Sensing Layers for Full-Range Detection of Human Motions[J].Acs Nano,2016,10(8):7901-7906.
[15]Yang L,Anantram M P,Han J,et al.Band-Gap Change of Carbon Nanotubes:Effect of Small Uniaxial and Torsional Strain[J].Phys.Rev.B,1999,60(19):13874-13878.
[16]Yang L,Han J,Electronic Structure of Deformed Carbon Nanotubes[J].Physical Review Letter,2000,85(1):154-157.
[17]Cao J,Wang Q,Dai H J.Electromechanical Properties of Metallic,Quasimetallic,and Semiconducting Carbon Nanotubes under Stretching[J].Physical Review Letter,2003,90(15):157601.
[18]Grow R J,Wang Q,Cao J,et al.Piezoresistance of Carbon Nanotubes on Deformable Thin-Film Membranes[J].Physical Review Letter,2005,86(9):218.
[19]Pyo S,Choi J,Kim J.A Fully Transparent,Flexible,Sensitive,and Visible-Blind Ultraviolet Sensor Based on Carbon Nanotube-Graphene Hybrid[J].Advanced Electronic Materials,5(2):2018,1800737.
[20]Shi J,Li X,Cheng H,et al.Strain Sensing:Graphene Reinforced Carbon Nanotube Networks for Wearable Strain Sensors[J].Advanced Functional Materials,2016,26(13):2078-2084.
[21]Hong Z,Chang F,Zhu Z.The Fabrication of Carbon Nanotubes Array-Based Electrochemical Chiral Sensor by Electrosynthesis[J].Talanta,2017,166:70-74.
[22]Zheng F Z,Zhou Z Y,Yang X,et al.Investigation on StrainSensing Suspended Single-Walled Carbon Nanotube Arrays[J].IEEE Transactions on Nanotechnology,2010,10(4):694-698.
[23]Nshimiyimana J P,Zhang J,Hu X,et al.Controlling Conducting Channels of Single-Walled Carbon Nanotube Array with Atomic Force Microscopy[J].Applied Nanoscience,2017,7(8):1-6.
[24]Zhang M,Zhou Z Y,Yang X,et al.Pinning of Single-Walled Carbon Nanotubes by Elective Electrodeposition[J].Electrochemistry Communications,2008,10(10):1559-1562.
[25]Zheng F Z,Zhou Z Y,Yang X,et al.Sorting Single-Walled Carbon Nanotubes by Strain-Based Electrical Burn-Off[J].Carbon,2010,48(8):2169-2174.
[26]Nagahara L A,Amlani I,Lewenstein J,et al.Directed Placement of Suspended Carbon Nanotubes for Nanometer-Scale Assembly[J].Applied Physics Letters,2002,80(20):3826-3827.
[27]Jones T B.Electromechanics of Particles[M].New York:Cambridge University Press,1995.34-62.
[28]Jones T B.Basic Theory of Dielectrophoresis and Electrorotation[M].IEEE Engineering in Medicine and Biology Magazine,2003,November/December:33-42.
[29]Shekhar S,Stokes P,Khondaker S I.Ultrahigh Density Alignment of Carbon Nanotube Arrays by Dielectrophoresis[J].American Chemical Society Nano,2011,5(3):1739-1746.
[30]粘正勋,邱闻锋.介电泳动-承先启后的纳米操纵技术[J].物理双月刊,2004,23(6):491-498.
[31]Lao C S,Liu J,Gao P,et al.ZnO Nanobelt/Nanowire Schottky Diodes Formed by Dielectrophoresis Alignment Across Au Electrodes[J].Nano Letters,2006,6(2):263-266.
[32]Wang Y G,Wang T H,Lin X W,et al.Ohmic Contact Junction of Carbon Nanotubes Fabricated by in situ Electron Beam Deposition[J].Nanotechnology,2006,17(24):6011-6015.
[33]Zhang Z B,Zhang S L.All-Around Contact for Carbon Nanotube Field-Effect Transistors Made by ac Dielectrophoresis[J].Journal of Vacuum Science and Technology B,2006,24(1):131-135.
[34]Nam C Y,Kim J Y,Fischer J E.Focused-Ion-Beam Platinum Nanopatterning for Ga N Nanowires:Ohmic Contacts and Patterned Growth[J].Applied Physics Letters,2005,86(19):193112.
[35]Vajtai R,Wei B Q,Zhang Z J.Building Carbon Nanotubes and Their Smart Architectures[J].Smart Materials and Structures,2002,11(5):691-698.
[36]Ajayan P M,Ravikmar V,Charlier J C.Surface Reconstructuctions and Dimensional Changes in Single-Walled Carbon Nanotubes[J].Physical Review Letters,1998,81(7):1437-1440.
[37]Sze S M,Wei B Q,Zhang Z J.Semiconductor Devices:Physics and Technology[M].Toronto:Wiley,1985.27-46.
[38]唐一科,郑富中,周兆英,等.基于单壁碳纳米管阵列的力敏传感器[J].机械工程学报,2010,46(18):13-17.
[2]Souri H,Yu J,Jeon H,et al.A Theoretical Study on the Piezoresistive Response of Carbon Nanotubes Embedded in Polymer Nanocomposites in an Elastic Region[J].Carbon,2017,120(5):427-437.
[3]Kim J S,Kim G W.Hysteresis Compensation of Piezoresistive Carbon Nanotube/Polydimethylsiloxane Composite-Based Force Sensors[J].Sensors,2017,17(2):229.
[4]Chen K,Gao W,Emaminejad S,et al.Printed Carbon Nanotube E-lectronics and Sensor Systems[J].Advanced Materials,2016,28(22):4397-4414.
[5]Qiu C,Zhang Z,Xiao M,et al.Scaling Carbon Nanotube Complementary Transistors to 5-nm Gate Lengths[J].Science,2017,355(6322):271-276.
[6]Yang Y,Ding L,Han J,et al.High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films[J].Acs Nano,2017,11(4):4124-4132.
[7]Han S J,Tang J,Kumar B,et al.High-Speed Logic Integrated Circuits with Solution-Processed Self-Assembled Carbon Nanotubes[J].Nature Nanotechnology,2017,12(9):861-865.
[8]Sharma A,Singh V,Bougher T L,et al.A Carbon Nanotube Optical Rectenna[J].Nature Nanotechnology,2015,10(12):1027-1032.
[9]Budhathokiuprety J,Langenbacher R E,Jena P V,et al.A Carbon Nanotube Optical Sensor Reports Nuclear Entry via a Noncanonical Pathway[J].Acs Nano,2017,11(4):3875-3882.
[10]Pfohl M,Tune D D,Graf A,et al.Fitting Single-Walled Carbon Nanotube Optical Spectra[J].Acs Omega,2017,2(3):1163-1171.
[11]Ruoff R S.Strong Bundles Based on Carbon Nanotubes[J].Nature Nanotechnology,2018,13(7):533-534.
[12]Kato Y,Horibe M,Ata S,et al.Stretchable Electromagnetic-Interference Shielding Materials Made of a Long Single-Walled CarbonNanotube-Elastomer Composite[J].Rsc Advances,2017,7(18):10841-10847.
[13]Shi J,Li X,Cheng H,et al.Graphene Reinforced Carbon Nanotube Networks for Wearable Strain Sensors[J].Advanced Functional Materials,2016,26(13):2078-2084.
[14]Liu Q,Chen J,Li Y,et al.High-Performance Strain Sensors with Fish-Scale-Like Graphene-Sensing Layers for Full-Range Detection of Human Motions[J].Acs Nano,2016,10(8):7901-7906.
[15]Yang L,Anantram M P,Han J,et al.Band-Gap Change of Carbon Nanotubes:Effect of Small Uniaxial and Torsional Strain[J].Phys.Rev.B,1999,60(19):13874-13878.
[16]Yang L,Han J,Electronic Structure of Deformed Carbon Nanotubes[J].Physical Review Letter,2000,85(1):154-157.
[17]Cao J,Wang Q,Dai H J.Electromechanical Properties of Metallic,Quasimetallic,and Semiconducting Carbon Nanotubes under Stretching[J].Physical Review Letter,2003,90(15):157601.
[18]Grow R J,Wang Q,Cao J,et al.Piezoresistance of Carbon Nanotubes on Deformable Thin-Film Membranes[J].Physical Review Letter,2005,86(9):218.
[19]Pyo S,Choi J,Kim J.A Fully Transparent,Flexible,Sensitive,and Visible-Blind Ultraviolet Sensor Based on Carbon Nanotube-Graphene Hybrid[J].Advanced Electronic Materials,5(2):2018,1800737.
[20]Shi J,Li X,Cheng H,et al.Strain Sensing:Graphene Reinforced Carbon Nanotube Networks for Wearable Strain Sensors[J].Advanced Functional Materials,2016,26(13):2078-2084.
[21]Hong Z,Chang F,Zhu Z.The Fabrication of Carbon Nanotubes Array-Based Electrochemical Chiral Sensor by Electrosynthesis[J].Talanta,2017,166:70-74.
[22]Zheng F Z,Zhou Z Y,Yang X,et al.Investigation on StrainSensing Suspended Single-Walled Carbon Nanotube Arrays[J].IEEE Transactions on Nanotechnology,2010,10(4):694-698.
[23]Nshimiyimana J P,Zhang J,Hu X,et al.Controlling Conducting Channels of Single-Walled Carbon Nanotube Array with Atomic Force Microscopy[J].Applied Nanoscience,2017,7(8):1-6.
[24]Zhang M,Zhou Z Y,Yang X,et al.Pinning of Single-Walled Carbon Nanotubes by Elective Electrodeposition[J].Electrochemistry Communications,2008,10(10):1559-1562.
[25]Zheng F Z,Zhou Z Y,Yang X,et al.Sorting Single-Walled Carbon Nanotubes by Strain-Based Electrical Burn-Off[J].Carbon,2010,48(8):2169-2174.
[26]Nagahara L A,Amlani I,Lewenstein J,et al.Directed Placement of Suspended Carbon Nanotubes for Nanometer-Scale Assembly[J].Applied Physics Letters,2002,80(20):3826-3827.
[27]Jones T B.Electromechanics of Particles[M].New York:Cambridge University Press,1995.34-62.
[28]Jones T B.Basic Theory of Dielectrophoresis and Electrorotation[M].IEEE Engineering in Medicine and Biology Magazine,2003,November/December:33-42.
[29]Shekhar S,Stokes P,Khondaker S I.Ultrahigh Density Alignment of Carbon Nanotube Arrays by Dielectrophoresis[J].American Chemical Society Nano,2011,5(3):1739-1746.
[30]粘正勋,邱闻锋.介电泳动-承先启后的纳米操纵技术[J].物理双月刊,2004,23(6):491-498.
[31]Lao C S,Liu J,Gao P,et al.ZnO Nanobelt/Nanowire Schottky Diodes Formed by Dielectrophoresis Alignment Across Au Electrodes[J].Nano Letters,2006,6(2):263-266.
[32]Wang Y G,Wang T H,Lin X W,et al.Ohmic Contact Junction of Carbon Nanotubes Fabricated by in situ Electron Beam Deposition[J].Nanotechnology,2006,17(24):6011-6015.
[33]Zhang Z B,Zhang S L.All-Around Contact for Carbon Nanotube Field-Effect Transistors Made by ac Dielectrophoresis[J].Journal of Vacuum Science and Technology B,2006,24(1):131-135.
[34]Nam C Y,Kim J Y,Fischer J E.Focused-Ion-Beam Platinum Nanopatterning for Ga N Nanowires:Ohmic Contacts and Patterned Growth[J].Applied Physics Letters,2005,86(19):193112.
[35]Vajtai R,Wei B Q,Zhang Z J.Building Carbon Nanotubes and Their Smart Architectures[J].Smart Materials and Structures,2002,11(5):691-698.
[36]Ajayan P M,Ravikmar V,Charlier J C.Surface Reconstructuctions and Dimensional Changes in Single-Walled Carbon Nanotubes[J].Physical Review Letters,1998,81(7):1437-1440.
[37]Sze S M,Wei B Q,Zhang Z J.Semiconductor Devices:Physics and Technology[M].Toronto:Wiley,1985.27-46.
[38]唐一科,郑富中,周兆英,等.基于单壁碳纳米管阵列的力敏传感器[J].机械工程学报,2010,46(18):13-17.