碳化硅与硅探测器辐射探测性能比较
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摘要
碳化硅(SiC)材料因其禁带宽度大、晶体原子离位能高等物理特性,而被视为制作耐高温和抗辐射器件极具潜力的宽带隙半导体材料。本文采用Geant4模拟得到了30μm厚的SiC和Si材料对不同能量的电子、质子、α粒子以及X射线的响应,并对SiC和Si探测器器件的I-V特性和能谱测量结果进行了比较。仿真及试验结果证明,SiC粒子阻挡本领及X射线探测效率与Si探测器相当,SiC与Si探测器对带电粒子的能谱分辨率也没有明显差别。
For its wider bandgap and higher threshold displacement energy,the composed semi- conduct material Silicon carbide( SiC) is investigated as a candidate to replace the semi- conduct material Si to be used in high- temperature and harsh radiation environments by researchers all around the world. In this work,the response of 30μm thick SiC and Si materials to different particlessuch as electrons,protons,alpha particles and X- rays with different energies were obtained using the Geant4 package separately,I- V characteristics of the SiC and Si detectors and energy spectrum measurement results were compared. The simulation and test results showed that the particle stopping power of SiC and X ray detection efficiency are comparable to that of the Si detector,and the SiC and Si detectors have no significant difference in the spectral resolution of charged particles.
For its wider bandgap and higher threshold displacement energy,the composed semi- conduct material Silicon carbide( SiC) is investigated as a candidate to replace the semi- conduct material Si to be used in high- temperature and harsh radiation environments by researchers all around the world. In this work,the response of 30μm thick SiC and Si materials to different particlessuch as electrons,protons,alpha particles and X- rays with different energies were obtained using the Geant4 package separately,I- V characteristics of the SiC and Si detectors and energy spectrum measurement results were compared. The simulation and test results showed that the particle stopping power of SiC and X ray detection efficiency are comparable to that of the Si detector,and the SiC and Si detectors have no significant difference in the spectral resolution of charged particles.
引文
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[2]D.H.Lumb,et al.Development of compound semiconductor detectors at ESA[J].Nuclear Instruments and Methods in Physics Research A,2006,568 427-432.
[3]Paul J.Sellin.Recent advances in compound semiconductor radiation Detectors[J].Nuclear Instruments and Methods in Physics Research A,2003,513 332-339.
[4]D.S.Mc Gregor and H.Hermonb.Room-temperature compound semiconductor radiation detectors[J].Nuclear Instruments and Methods in Physics Research A,1997,395 101-124.
[5]G.Lucas and L.Pizzagalli.Comparison of threshold displacement energies inβ-SiC determined by classical potentials and ab initio calculations[J].Nuclear Instruments and Methods in Physics Research B,2005,229 359-366.
[6]Pensel G,et al.Silicon carbide III nitrides and related materials[J].Mater.Sci Forum,1998,295 264268.
[7]Harris G L.Properties of SiC[M].London:The Institute of Electrical Engineers,1995:10-25.
[8]Agostinelli,et al.Geant4 a simulation toolkit[J].Nuclear Instruments and Methods in Physics Research A,2003,506 250-303.
[9]Knoll,G.F.Radiation Detection and Measurement[M].New York,USA:John Wiley and Sons,2000:106-121.
[10]Nava F,et al.Minimum ionizing and alpha particles detectors based on epitaxial semiconductor silicon carbide[J].IEEE Trans.Nucl.Sci,2004,51 238 44.