新型模拟SEL故障注入模块设计
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摘要
单粒子锁定防护设备用于保证CMOS器件的正常工作,避免单粒子锁定效应(SEL,Single Event Latchup)带来的诸多危害。为了实现对SEL防护设备软件功能的验证,设计了一种新型模拟SEL故障注入和消除的模块。本文从硬件和软件两个方面阐述了对该模块的设计,通过增加CMOS器件电源输入端的电流,实现了SEL的模拟注入。使用VA140芯片SEL防护电路对该模块进行了检验、测试,测试的结果证明该模块可以实现SEL模拟注入,从而对SEL防护设备的软件功能进行验证。最后,该模块被成功用于硅阵列探测器的电子学读出系统软件中单粒子防护部分的功能测试,从另一个侧面说明了该模块的应用。
SEL protective equipment ensures the normal work of the CMOS device,and avoids a lot of harm of SEL.In order to verify the software function of the SEL protection device,a new type of Imitation SEL injection module has been designed.Methods of the design uses a combination of hardware and software,the power supply current is increased by this module,in order to achieve the simulation of SEL injection.This module is tested by VA140 chip SEL protection circuit,the result shows that it can verify the software function of the SEL protection device.At the end the readout system of silicon array detector is tested by this module.
SEL protective equipment ensures the normal work of the CMOS device,and avoids a lot of harm of SEL.In order to verify the software function of the SEL protection device,a new type of Imitation SEL injection module has been designed.Methods of the design uses a combination of hardware and software,the power supply current is increased by this module,in order to achieve the simulation of SEL injection.This module is tested by VA140 chip SEL protection circuit,the result shows that it can verify the software function of the SEL protection device.At the end the readout system of silicon array detector is tested by this module.
引文
[1]陈睿,余永涛,董刚,等.不同工艺尺寸CMOS器件单粒子闩锁效应及其防护方法[J].强激光与粒子柬,2014,(7):270-275.
[2]Johnston A H,Baze M P.Experimental methods for determining latchup paths in integrated circuits[J].IEEE Trans Nuclear Science,1990,32(6):4260-4265.
[3]Schroeder J E,Ochoa A,Dresendorfer P V,et al.Latchup elimination in bulk CMOS LSI circuits[J].IEEE Trans Nuclear Science,1980,27(6):1735-1738.
[4]Johnston A H.The influence of VLSI technology evolution on radiation induced latchup in space systems[J].IEEE Trans Nuclear Science,1996,43(2):505-521.
[5]Johnston A H,Huqhlock BW.Latchup In Cmos From Single particles[J].IEEE Transactions on nuclear science,1990,37(6):1886-1893.
[2]Johnston A H,Baze M P.Experimental methods for determining latchup paths in integrated circuits[J].IEEE Trans Nuclear Science,1990,32(6):4260-4265.
[3]Schroeder J E,Ochoa A,Dresendorfer P V,et al.Latchup elimination in bulk CMOS LSI circuits[J].IEEE Trans Nuclear Science,1980,27(6):1735-1738.
[4]Johnston A H.The influence of VLSI technology evolution on radiation induced latchup in space systems[J].IEEE Trans Nuclear Science,1996,43(2):505-521.
[5]Johnston A H,Huqhlock BW.Latchup In Cmos From Single particles[J].IEEE Transactions on nuclear science,1990,37(6):1886-1893.