Effects of p-type GaN thickness on optical properties of Ga N-based light-emitting diodes

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英文篇名：Effects of p-type Ga N thickness on optical properties of Ga N-based light-emitting diodes 作者：徐明升 ; 张恒 ; 周泉斌 ; 王洪 英文作者：XU Ming-sheng;ZHANG Heng;ZHOU Quan-bin;WANG Hong;Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics,South China University of Technology;State Key Laboratory of Crystal Materials, Shandong University; 中文刊名：OELJ 英文刊名：光电子快报(英文版) 机构：Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics,South China University of Technology;State Key Laboratory of Crystal Materials, Shandong University; 出版日期：2016-07-01 出版单位：Optoelectronics Letters 年：2016 期：v.12;No.67 基金：supported by the National High Technology Research and Development Program of China(No.2014AA032609);; the National Natural Science Foundation of China(Nos.61504044,61404050 and 51502156);; the China Postdoctoral Science Foundation(Nos.2015M582384 and 2016T90782);; the Major Scientific and Technological Special Project of Guangdong Province(No.2014B010119002);; the Fundamental Research Funds for the Central Universities(No.2015ZM074);; the Union Funds of Guizhou Science and Technology Department and Guizhou Minzu University(No.LH20157221) 语种：英文; 页：OELJ201604003 页数：4 CN：04 ISSN：12-1370/TN 分类号：14-17

摘要

The influence of p-type Ga N(p Ga N) thickness on the light output power(LOP) and internal quantum efficiency(IQE) of light emitting diode(LED) was studied by experiments and simulations. The LOP of Ga N-based LED increases as the thickness of p Ga N layer decreases from 300 nm to 100 nm, and then decreases as the thickness decreases to 50 nm. The LOP of LED with 100-nm-thick pG a N increases by 30.9% compared with that of the conventional LED with 300-nm-thick p Ga N. The variation trend of IQE is similar to that of LOP as the decrease of Ga N thickness. The simulation results demonstrate that the higher light efficiency of LED with 100-nm-thick p Ga N is ascribed to the improvements of the carrier concentrations and recombination rates.
        The influence of p-type Ga N(p Ga N) thickness on the light output power(LOP) and internal quantum efficiency(IQE) of light emitting diode(LED) was studied by experiments and simulations. The LOP of Ga N-based LED increases as the thickness of p Ga N layer decreases from 300 nm to 100 nm, and then decreases as the thickness decreases to 50 nm. The LOP of LED with 100-nm-thick pG a N increases by 30.9% compared with that of the conventional LED with 300-nm-thick p Ga N. The variation trend of IQE is similar to that of LOP as the decrease of Ga N thickness. The simulation results demonstrate that the higher light efficiency of LED with 100-nm-thick p Ga N is ascribed to the improvements of the carrier concentrations and recombination rates.

引文

[1]G.-c.Chen and G.-h.Fan,Optoelectronics Letters 10,250(2014).
    [2]G.Lu,B.Wang and Y.-w.Ge,Optoelectronics Letters 11,348(2015).
    [3]Y.Zhengmao,L.Xiaoyan,W.Huining,W.Yongzhong,H.Xiaopeng,J.Ziwu and X.Xiangang,Optics Express21,28531(2013).
    [4]J.Zhang,X.-J.Zhuo,D.-W.Li,Z.-W.Ren,H.-X.Yi,J.-H.Tong,X.-F.Wang,X.Chen,B.-J.Zhao and S.-T.Li,Superlattices and Microstructures 73,145(2014).
    [5]Z.H.Zhang,W.Liu,Z.Ju,S.T.Tan,Y.Ji,Z.Kyaw,X.Zhang,L.Wang,X.W.Sun and H.V.Demir,Appl.Phys.Lett.105,033506(2014).
    [6]H.J.Li,J.J.Kang,P.P.Li,J.Ma,H.Wang,M.Liang,Z.C.Li,J.Li,X.Y.Yi and G.H.Wang,Appl.Phys.Lett.102,011105(2013).
    [7]Z.H.Zhang,W.Liu,S.T.Tan,Y.Ji,L.Wang,B.Zhu,Y.Zhang,S.Lu,X.Zhang and N.Hasanov,Appl.Phys.Lett.105,153503(2014).
    [8]L.Sun,G.-E.Weng,M.-M.Liang,L.-Y.Ying,X.-Q.Lv,J.-Y.Zhang and B.-P.Zhang,Physica E:Low-dimensional Systems and Nanostructures 60,166(2014).
    [9]T.Fujii,Y.Gao,R.Sharma,E.Hu,S.Den Baars and S.Nakamura,Appl.Phys.Lett.84,855(2004).
    [10]T.-H.Lin,S.-J.Wang,Y.-C.Tu,C.-H.Hung,C.-A.Lin,Y.-C.Lin and Z.-S.You,Solid-State Electronics 107,30(2015).
    [11]Y.C.Shen,J.J.Wierer,M.R.Krames,M.J.Ludowise,M.S.Misra,F.Ahmed,A.Y.Kim,G.O.Mueller,J.C.Bhat and S.A.Stockman,Proc.SPIE 5366,LightEmitting Diodes:Research,Manufacturing,and Applications VIII,20(2004).
    [12]C.-H.Liao,C.-Y.Chen,H.-S.Chen,K.-Y.Chen,W.-L.Chung,W.-M.Chang,J.-J.Huang,Y.-F.Yao,Y.-W.Kiang and C.-C.Yang,IEEE Photonics Technology Letters 23,1757(2011).
    [13]S.-S.Schad,M.Scherer,M.Seyboth and V.Schwegler,Physica Status Solidi A Applied Research 188,127(2001).
    [14]J.W.Lee,Y.Tak,J.Y.Kim,H.G.Hong,S.Chae,B.Min,H.Jeong,J.Yoo,J.R.Kim and Y.Park,J.Cryst.Growth315,263(2011).
    [15]APSYS,Crosslight Software Inc.,Burnaby,Canada.
    [16]M.Zhang,F.Yun,Y.Li,W.Ding,H.Wang,Y.Zhao,W.Zhang,M.Zheng,Z.Tian and X.Su,Physica Status Solidi 212,954(2015).
    [17]L.Cheng,S.Wu,H.Chen,C.Xia and Q.Kong,Optical&Quantum Electronics 48,1(2016).
    [18]E.F.Schubert,Light-emitting Diodes,Cambridge University Press,Cambridge,2006.
    [19]M.Suzuki,T.Uenoyama and A.Yanase,Physical Review B 52,8132(1995).