Progress in research of GaN-based LEDs fabricated on SiC substrate
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摘要
The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated.It is found that the Al GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with Al N buffer layer.To increase the light extraction efficiency of GaN-based LEDs on Si C substrate,flip-chip structure and thin film flip-chip structure were designed and optimized.The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 m A.At 350 m A,the output power,the Vf,the dominant wavelength,and the wall-plug efficiency of the blue LED were 644 m W,2.95 V,460 nm,and 63%,respectively.
The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated.It is found that the Al GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with Al N buffer layer.To increase the light extraction efficiency of GaN-based LEDs on Si C substrate,flip-chip structure and thin film flip-chip structure were designed and optimized.The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 m A.At 350 m A,the output power,the Vf,the dominant wavelength,and the wall-plug efficiency of the blue LED were 644 m W,2.95 V,460 nm,and 63%,respectively.
The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated.It is found that the Al GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with Al N buffer layer.To increase the light extraction efficiency of GaN-based LEDs on Si C substrate,flip-chip structure and thin film flip-chip structure were designed and optimized.The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 m A.At 350 m A,the output power,the Vf,the dominant wavelength,and the wall-plug efficiency of the blue LED were 644 m W,2.95 V,460 nm,and 63%,respectively.
引文
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[21]Grosse P,Basset G,Calvat C,Couchaud M,Faure C,Ferrand B,Grange Y,Anikin M,Bluet J M,Chourou K and Madar R 1999 Mater.Sci.Eng.B 61–62 58
[22]Yang K,Chen X,Yang X,Peng Y,Hu X and Xu X 2014 J.Synth.Cryst.43 3055
[23]Xu M,Hu X and Xu X 2014 J.Synth.Cryst.43 1346
[24]Li G,Chua J S,Xu S J,Wang W,Li P,Beaumont B and Gibart P 1999Appl.Phys.Lett.74 2821
[25]Krames M R,Ochiai-Holcomb M,H ofler G E,Carter-Coman C,Chen E I,Tan I H,Grillot P,Gardner N F,Chui H C,Huang J W,Stockman S A,Kish F A,Craford M G,Tan T S,Kocot C P,Hueschen M,Posselt J,Loh B,Sasser G and Collins D 1999 Appl.Phys.Lett.75 2365
[26]Baur J,Hahn B,Fehrer M,Eisert D,Stein W,Pl ossl A,K uhn F,Zull H,Winter M and Harle V 2002 Phys.Stat.Sol.(a)194 399
[27]Xu M,Xu H,Shen Y,Hu X and Xu X 2014 IEEE Photon.Technol.Lett.26 1053
[28]Xi J Q,Luo H,Pasquale A J,Kim K S and Schubert E F 2006 IEEE Photon.Technol.Lett.18 2347
[29]Von Malm N,Wirth R,Illek S and Steegm uller U 2010 Proc.SPIE7784 778411
[30]Shchekin O B,Epler J E,Trottier T A,Margalith T,Steigerwald D A,Holcomb M O,Martin P S and Krames M R 2006 Appl.Phys.Lett.89071109
[2]Moran B,Wu F,Romanov A E,Mishra U K,Denbaars S P and Speck J S 2004 J.Crystal.Growth 273 38
[3]Whitaker T 2001 Compd.Semicond.7 7
[4]Whitaker T 2000 Compd.Semicond.6 11
[5]Berkman E,Leonard R T,Paisley M J,Khlebnikov Y,O’Loughlin M J,Burk A A,Powell A R,Malta D P,Deyneka E,Brady M F,Khlebnikov I,Tsvetkov V F,Hobgood H M,Sumakeris J,Basceri C,Balakrishna V,Carter C H Jr and Balkas C 2009 Mater.Sci.Forum 615 3
[6]Schad S S,Scherer M,Seyboth M and Schwegler V 2001 Phys.Stat.Sol.(a)188 127
[7]Momeen and Khan M Y 1995 Crystal.Res.Technol.30 1127
[8]Han R,Xu X,Hu X,Yu N,Wang J,Tian Y and Huang W 2003 Opt.Mater.23 415
[9]Kanaya M,Takahashi J,Fujiwara Y and Moritani A 1991 Appl.Phys.Lett.58 56
[10]Augustine G,Hobgood M,Balakrishna V,Dunne G and Hopkins R H1997 Phys.Stat.Sol.(b)202 137
[11]Tairov Y M and Tsvetkov V F 1983 Prog.Crystal.Growth Charact.7111
[12]Yakimova R,Syvajarvi M,Iakimov T,Jacobsson H,Ra back R,Vehanen A and Janze′n E 2000 J.Crystal.Growth 217 255
[13]Rost H J,Siche D,Dolle J,Eiserbeck W,M uller T,Schulz D,Wagner G and Wollweber J 1999 Mater.Sci.Eng.B 61–62 68
[14]Stein R A and Lanig P 1993 J.Crystal.Growth 131 71
[15]Dmitriev V,Rendakova S,Kuznetsov N,Savkina N,Andreev A,Rastegaeva M,Mynbaeva M and Morozov A 1999 Mater.Sci.Eng.B 61–62446
[16]Heindl J,Dorsch W,Eckstein R,Hofmann D,Marek T,M uller St G,Strunk H P and Winnacker A 1997 J.Crystal.Growth 179 510
[17]Giocondi J,Rohrer G S,Skowronski M,Balakrishna.V,Augustine G,Hobgood H M and Hopkins R H 1997 J.Crystal.Growth 181 351
[18]Liu J,Gao J,Cheng J,Yang J and Qiao G 2005 Mater.Lett.59 2374
[19]Frank F C 1951 Acta Cryst.4 497
[20]Ning L,Hu X,Xu X,Chen X,Wang Y,Jiang S and Li J 2008 J.Appl.Cryst.41 939
[21]Grosse P,Basset G,Calvat C,Couchaud M,Faure C,Ferrand B,Grange Y,Anikin M,Bluet J M,Chourou K and Madar R 1999 Mater.Sci.Eng.B 61–62 58
[22]Yang K,Chen X,Yang X,Peng Y,Hu X and Xu X 2014 J.Synth.Cryst.43 3055
[23]Xu M,Hu X and Xu X 2014 J.Synth.Cryst.43 1346
[24]Li G,Chua J S,Xu S J,Wang W,Li P,Beaumont B and Gibart P 1999Appl.Phys.Lett.74 2821
[25]Krames M R,Ochiai-Holcomb M,H ofler G E,Carter-Coman C,Chen E I,Tan I H,Grillot P,Gardner N F,Chui H C,Huang J W,Stockman S A,Kish F A,Craford M G,Tan T S,Kocot C P,Hueschen M,Posselt J,Loh B,Sasser G and Collins D 1999 Appl.Phys.Lett.75 2365
[26]Baur J,Hahn B,Fehrer M,Eisert D,Stein W,Pl ossl A,K uhn F,Zull H,Winter M and Harle V 2002 Phys.Stat.Sol.(a)194 399
[27]Xu M,Xu H,Shen Y,Hu X and Xu X 2014 IEEE Photon.Technol.Lett.26 1053
[28]Xi J Q,Luo H,Pasquale A J,Kim K S and Schubert E F 2006 IEEE Photon.Technol.Lett.18 2347
[29]Von Malm N,Wirth R,Illek S and Steegm uller U 2010 Proc.SPIE7784 778411
[30]Shchekin O B,Epler J E,Trottier T A,Margalith T,Steigerwald D A,Holcomb M O,Martin P S and Krames M R 2006 Appl.Phys.Lett.89071109