氢氦离子辐照对4H-SiC表面形貌的影响
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摘要
以4H-SiC为研究对象,在800℃下,用24keV的H~+和30keV的He~+分别进行H~+单束、He~+单束、先H~+后He~+双束和先He~+后H~+双束辐照,并利用原子力显微镜(AFM)研究辐照对4H-SiC表面形貌的影响.实验表明:H~+辐照的样品表面出现直径平均约为8μm的大凸起,He~+辐照的样品表面则产生了均匀的纳米尺寸的小凸起;H~+辐照在材料表面产生的大凸起在辐照He~+后消失;而He~+预辐照之后再进行H~+辐照,材料表面不会产生大的凸起,并结合X射线衍射(XRD)数据对这种氢氦协同效应进行了解释.结论表明,He~+预辐照对凸起的形成有抑制作用,He~+后辐照则对已产生的凸起有抛光作用.
Single and sequential irradiations of 24 keV H~+ and 30 keV He~+ were performed at 800 ℃ to investigate the effects of irradiations on surface topography of 4H-SiC by using atomic force microscope(AFM).The experimental results show that blisters with diameter of about 8μm were observed on H~+-irradiated specimen while blisters with uniform nano-scale sizes were found on He~+-irradiated one.Large blisters induced by H~+ pre-irradiation disappeared after He~+ post-irradiation,and no blister appeared after H~+ post-irradiation with He~+pre-irradiation.The mechanisms behind the complex synergistic phenomena between H and He are discussed by combing with X-ray diffraction(XRD)data.Thus,it indicates that He~+ pre-irradiation can inhibit H blisters formation,while He~+ post-irradiation can remove the blisters induced by H~+ pre-irradiation.
Single and sequential irradiations of 24 keV H~+ and 30 keV He~+ were performed at 800 ℃ to investigate the effects of irradiations on surface topography of 4H-SiC by using atomic force microscope(AFM).The experimental results show that blisters with diameter of about 8μm were observed on H~+-irradiated specimen while blisters with uniform nano-scale sizes were found on He~+-irradiated one.Large blisters induced by H~+ pre-irradiation disappeared after He~+ post-irradiation,and no blister appeared after H~+ post-irradiation with He~+pre-irradiation.The mechanisms behind the complex synergistic phenomena between H and He are discussed by combing with X-ray diffraction(XRD)data.Thus,it indicates that He~+ pre-irradiation can inhibit H blisters formation,while He~+ post-irradiation can remove the blisters induced by H~+ pre-irradiation.
引文
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[26]OLIVIERO E,TROMAS C,PAILLOUX F,et al.Damage formation and recovery in temperature helium implanted 4H-SiC[J].Materials Science and Engineering,2003,102(1-3):289-292.DOI:10.1016/S0921-5107(02)00723-7.
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[2]FAN H Y,LI R H,YANG D M,et al.Observation of He bubbles in ion irradiated fusion materials by conductive atomic force microscopy[J].Journal of Nuclear Materials,2013,441(1-3):54-58.DOI:10.1016/j.jnucmat.2013.05.034.
[3]HEMMINGSSON C,SON N T,KORDINA O,et al.Deep level defects in electron-irradiated 4H-SiC epitaxial layers[J].Journal of Applied Physics,1997,81(9):6155-6159.DOI:10.1063/1.364397.
[4]LI B S,WANG Z G,JIN J F.Implantation temperature and thermal annealing behavior in H+2-implanted6H-SiC[J].Nuclear Instruments and Methods in Physics Research Section B,2013,316(12):239-244.DOI:10.1016/j.nimb.2013.09.016.
[5]张勇,张崇宏,周丽宏,等.氦离子注入4H-SiC晶体的纳米硬度研究[J].物理学报,2010,59(6):4130-4135.ZHANG Y,ZHANG C H,ZHOU L H,et al.Study on nanohardness of helium-implanted 4H-SiC[J].Acta Physica Sinica,2010,59(6):4130-4135(Ch).
[6]BARBOT J F,DECLEMY A,BEAUFORT M F,et al.Damage accumulation in He implanted SiC at different temperatures[J].Physica Status Solidi,2013,210(1):218-221.DOI:10.1002/pssa.201200364.
[7]BARBOT J F,BEAUFORT M F,TEXIER M,et al.Swelling and stacking fault formation in helium implanted SiC[J].Journal of Nuclear Materials,2011,413(3):162-165.DOI:10.1016/j.jnucmat.2011.04.022.
[8]HASEGAWA A,KOHYAMA A,JONES R H,et al.Critical issues and current status of SiC/SiC composites for fusion[J].Journal of Nuclear Materials,2000,283-287(00):128-137.DOI:10.1016/S0022-3115(00)00374-3.
[9]HASEGAWA A,OLIVER M B,NOGAMI S,et al.Study of helium effects in SiC/SiC composites under fusion reactor environment[J].Journal of Nuclear Materials,2000,283-287(4):811-815.DOI:10.1016/S0022-3115(00)00375-5.
[10]OLIVIERO E,BEAUFORT M F,BARBOT J F,et al.Helium implantation defects in SiC:A thermal helium desorption spectrometry[J].Journal of Applied Physics,2002,93(1):231-238.DOI:10.1063/1.1527974.
[11]MIWA S,HASEGAWA A,TAGUCHI T,et al.Cavity formation in a SiC/SiC composite under simultaneous irradiation of hydrogen,helium and silicon ions[J].Materials Transactions,2005,46(3):536-542.DOI:10.2320/matertrans.46.536.
[12]TAGUCHI T,IGAWA N,MIWA S,et al.Synergistic effects of implanted helium and hydrogen and the effect of irradiation temperature on the microstructure of SiC/SiC composites[J].Journal of Nuclear Materials,2004,335(3):508-514.DOI:10.1016/j.jnucmat.2004.08.014.
[13]HOJOU K,FURUNA S,KUSHITAK N,et al.Insitu observation of damage evolution in SiC crystals during He+and H+dual-ion beam irradiation[J].Journal of Nuclear Materials,1992,191-194(3):583-587.DOI:10.1016/S0022-3115(09)80113-X.
[14]OYA Y,ONISHI Y,TAKEDA T,et al.Interaction between hydrogen isotopes and damaged structures produced by He+implantation in SiC[J].Fusion Engineering and Design,2006,81(8-14):987-992.DOI:10.1016/j.fusengdes.2005.08.057.
[15]OYA Y,ONISHI Y,MIYAUCHI H,et al.Hydrogen isotope behavior and its interaction with post irradiated energetic helium in SiC[J].Journal of Radioanalytical and Nuclear Chemistry,2007,272(3):639-644.DOI:10.1007/s10967-007-0638-7.
[16]HOJOU K,FURUNO S,KUSHITA K N,et al.EELS analysis of SiC crystals under hydrogen and helium dual-ion beam irradiation[J].Nuclear Instruments&Methods in Physics Research Section B,1998,141(1-4):148-153.DOI:10.1016/S0168-583X(98)00181-5.
[17]ISHIKAWA Y,NAGATA S,ZHAO M,et al.Retention and thermal release behavior of deuterium and helium implanted in SiC[J].Journal of Nuclear Materials,2014,455(1-3):512-515.DOI:10.1016/j.jnucmat.2014.08.015.
[18]HOJOU K,FURUNO S,IZUI K,et al.In-situ observation of structural damage in SiC crystals induced by hydrogen ion irradiation and successive electron irradiation[J].Journal of Electron Microscopy,1991,40(3):157-161.
[19]STOLLER R E,TOLOCZKO M B,WAS G S,et al.On the use of SRIM for computing radiation damage exposure[J].Nuclear Instruments&Methods in Physics Research Section B,2013,310(310):75-80.DOI:10.1016/j.nimb.2013.05.008.
[20]徐超亮,张崇宏,李炳生,等.Kr离子注入SiC的拉曼光谱研究[J].原子核物理评论,2011,28(2):209-214.XU C L,ZHANG C H,LI B S,et al.Raman spectroscopy study of Kr-implanted silicon carbide[J].Nuclear Physics Review,2011,28(2):209-214(Ch).
[21]祝威,阮永丰,陈敬,等.高剂量中子辐照6H-SiC晶体的退火特性[J].硅酸盐通报,2012,31(2):386-390.ZHU W,RUAN Y F,CHEN J,et al.Annealing characteristics of heavy neutron-irradiated 6H-SiC crystal[J].Bulletin of the Chinese Ceramic Society,2012,31(2):386-390(Ch).
[22]CHEN X F,ZHOU W,FENG Q J,et al.Irradiation effects in 6H-SiC induced by neutron and heavy ions:Raman spectroscopy and high-resolution XRD analysis[J].Journal of Nuclear Materials,2016,478:215-221.DOI:10.1016/j.jnucmat.2016.06.020.
[23]MUTO S,TANABLE T,MARUYAMA T,et al.Cross sectional TEM observation of gas-ion-irradiation induced surface blisters and their precursors in SiC[J].Materials Transactions,2003,44(12):2599-2604.DOI:10.2320/matertrans.44.2599.
[24]IGARASHI S,MUTO S,TANABE T.Surface blistering of ion irradiated SiC studied by grazing incidence electron microscopy[J].Journal of Nuclear Materials,2002,307-311(2):1126-1129.DOI:10.1016/S0022-3115(02)01271-0.
[25]白志平,范红玉,袁凯,等.基于多模式扫描探针显微镜技术分析碳化硅的辐照损伤[J].核技术,2014,37(1):29-33.DOI:10.11889/j.0253-3219.2014.hjs.37.010204.BAI Z P,FAN H Y,YUAN K,et al.Irradiation damage in silicon carbide based on a multi-mode scanning probe microscope[J].Nuclear Techniques,2014,37(1):29-33.DOI:10.11889/j.0253-3219.2014.hjs.37.010204(Ch).
[26]OLIVIERO E,TROMAS C,PAILLOUX F,et al.Damage formation and recovery in temperature helium implanted 4H-SiC[J].Materials Science and Engineering,2003,102(1-3):289-292.DOI:10.1016/S0921-5107(02)00723-7.
[27]OYA Y,OKUNO K.Helium pre-implantation and post-implantation effects on hydrogen isotope retention in SiC[C]//IEEE Symposium on Fusion Engineering.New York:IEEE Press,2007:25-28.DOI:10.1109/FUSION.2007.4337917.