氧化锌压敏陶瓷的微波烧结工艺研究
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摘要
微波烧结技术因能改善被烧结材料的微观结构和性能,已经成为材料制备领域里新的研究热点。本文以氧化锌压敏陶瓷为研究对象,以Bi_2O_3含量、升温速率、烧结温度、保温时间为四要素对陶瓷的微波烧结工艺设计了正交实验。研究发现,微波烧结所得样品与传统烧结样品相比,其漏电流和非线性系数均得到了优化。通过对正交实验数据的分析,得出了针对每个性能的最优工艺参数及各要素对各性能影响的主次顺序,最后经综合考虑确定了微波烧结氧化锌压敏陶瓷的最优工艺参数,得到了压敏电位梯度为362. 3 V/mm,非线性系数为50. 24,漏电流密度为1. 55×10~(-6)A/cm~2,密度为5. 603 g/cm~3的氧化锌压敏陶瓷。缩短了烧结时间,优化了陶瓷的性能。
Microwave sintering is a recently developed technology,absorbing lots of attentions,due to it has advantages to improve the uniformity,yield and properties of the sintered products. Here,the sintering behavior and the properties of the ZnO ceramics were studied using microwave sintering. The orthogonal experiments were designed to investigate the influence of the Bi_2O_3 content,heating rate,sintering temperature and holding time on the ceramics. The results showthat the leakage current and the nonlinear coefficient of the sample obtained by microwave sintering are optimized. The optimum technological parameters for fabricating ZnO ceramics are determined by considering densities and electric properties. The ZnO ceramic sintered following the optimized parameters shows a potential gradient of 362. 3 V/mm,a nonlinear coefficient of 50. 24,a leakage current density of 1. 55×10~(-6)A/cm~2 and a density of 5. 603 g/cm~3,The sintering time is shortened and the properties of ceramics are optimized,which might be helpful for the further development of the relative applications.
Microwave sintering is a recently developed technology,absorbing lots of attentions,due to it has advantages to improve the uniformity,yield and properties of the sintered products. Here,the sintering behavior and the properties of the ZnO ceramics were studied using microwave sintering. The orthogonal experiments were designed to investigate the influence of the Bi_2O_3 content,heating rate,sintering temperature and holding time on the ceramics. The results showthat the leakage current and the nonlinear coefficient of the sample obtained by microwave sintering are optimized. The optimum technological parameters for fabricating ZnO ceramics are determined by considering densities and electric properties. The ZnO ceramic sintered following the optimized parameters shows a potential gradient of 362. 3 V/mm,a nonlinear coefficient of 50. 24,a leakage current density of 1. 55×10~(-6)A/cm~2 and a density of 5. 603 g/cm~3,The sintering time is shortened and the properties of ceramics are optimized,which might be helpful for the further development of the relative applications.
引文
[1]Mei L T,Hsiang H I,Hsi C S,et al.Na2CO3doping effec on Zn O-Pr6O11-Co3O4ceramic varistor properties[J].Journa of Alloys&Compounds,2013,558(5):84-90.
[2]He J L,Hu J,Meng B W,et al.Requirement of ultrahigh voltage GIS arrester to voltage gradient of metaloxide varistor[J].Science in China,2009,52(2):450-455.
[3]徐东,施利毅,吴振红,等.微波烧结氧化锌压敏陶瓷的研究进展[J].电瓷避雷器,2007(5):25-30.
[4]林枞,徐政,彭虎,等.微波烧结氧化锌压敏电阻的致密化和晶粒生长[J].无机材料学报,2007,22(5):917-921.
[5]康雪雅,常爱民,韩英,等.Zn O压敏陶瓷的微波烧结[J].无机材料学报,1998,13(5):751-754.
[6]夏广斌,林枞,郭方方,等.微波烧结氧化锌压敏电阻的电性能研究[J].材料导报,2007(s2):128-130.
[7]李磊,徐政,林枞,等.氧化锌压敏电阻微波烧结行为的研究[J].材料科学与工程学报,2006,24(6):887-890.
[8]肖祥凯.Zn O压敏陶瓷的低温烧结及其电性能研究[D].北京:中国科学院大学,2015.
[9]He J L,Hu J.Discussions on Nonuniformity of Energy Absorption Capabilities of Zn OVaristors[J].IEEETransactions on Pow er Delivery,2007,22(3):1523-1532.
[10]任文娥,于钦学.氧化锌压敏陶瓷电阻片的电容对冲击破坏机理影响的研究探讨[J].电瓷避雷器,2000(1):39-41.
[11]张大卫,施利毅,徐东,等.Zn O压敏陶瓷烧结工艺优化[J].材料导报,2009,23(2):91-94.
[12]Zhao H,Hu J,Chen S,et al.Tailoring the highimpulse current discharge capability of Zn O varistor ceramics by doping w ith Ga2O3[J].Ceramics International,2016,42(4):5582-5586.
[13]Meng P,Gu S,Wang J,et al.Improving electrical properties of multiple dopant Zn O varistor by doping with indium and gallium[J].Ceramics International,2017,44(1).
[14]Long W,Hu J,Liu J,et al.Effects of cobalt doping on the electrical characteristics of Al-doped Zn O varistors[J].Materials Letters,2010,64(9):1081-1084.
[15]段雷,许高杰,王永晔,等.Si O2掺杂量对氧化锌压敏电阻性能的影响[J].人工晶体学报,2009(s1):215-218.
[16]Kim J,Kimura T,Yamaguchi T.Microstructure development in Sb2O3-doped Zn O[J].Journal of Materials Science,1989,24(7):2581-2586.
[17]Ott J,Lorenz A,Harrer M,et al.The Influence of Bi2O3and Sb2O3on the Electrical Properties of Zn O-Based Varistors[J].Journal of Electroceramics,2001,6(2):135-146.
[18]李建英,胡楠.提高Zn O压敏电阻片能量耐受能力的方法与途径[J].电瓷避雷器,1998(2):33-39.
[19]Umaru D,Zakaria A,Abdullah C A C,et al.Effect of sintering temperature on V2O5doped Zn O-Bi2O3-Sb2O3-Mn O2based varistor ceramics:Microstructure and electrical properties[J].Digest Journal of Nanomaterials and Biostructures,2016,11(3):707-714.
[20]Shen J,Jiang S,Xu Y,et al.Boron and sodium codoped Zn O varistor w ith high stability of pulse currentsurge[J].Journal of Alloys&Compounds,2017,728:280.
[21]叶小健.低压高通流量Zn O压敏电阻的研究[D].武汉:华中科技大学,2015.
[2]He J L,Hu J,Meng B W,et al.Requirement of ultrahigh voltage GIS arrester to voltage gradient of metaloxide varistor[J].Science in China,2009,52(2):450-455.
[3]徐东,施利毅,吴振红,等.微波烧结氧化锌压敏陶瓷的研究进展[J].电瓷避雷器,2007(5):25-30.
[4]林枞,徐政,彭虎,等.微波烧结氧化锌压敏电阻的致密化和晶粒生长[J].无机材料学报,2007,22(5):917-921.
[5]康雪雅,常爱民,韩英,等.Zn O压敏陶瓷的微波烧结[J].无机材料学报,1998,13(5):751-754.
[6]夏广斌,林枞,郭方方,等.微波烧结氧化锌压敏电阻的电性能研究[J].材料导报,2007(s2):128-130.
[7]李磊,徐政,林枞,等.氧化锌压敏电阻微波烧结行为的研究[J].材料科学与工程学报,2006,24(6):887-890.
[8]肖祥凯.Zn O压敏陶瓷的低温烧结及其电性能研究[D].北京:中国科学院大学,2015.
[9]He J L,Hu J.Discussions on Nonuniformity of Energy Absorption Capabilities of Zn OVaristors[J].IEEETransactions on Pow er Delivery,2007,22(3):1523-1532.
[10]任文娥,于钦学.氧化锌压敏陶瓷电阻片的电容对冲击破坏机理影响的研究探讨[J].电瓷避雷器,2000(1):39-41.
[11]张大卫,施利毅,徐东,等.Zn O压敏陶瓷烧结工艺优化[J].材料导报,2009,23(2):91-94.
[12]Zhao H,Hu J,Chen S,et al.Tailoring the highimpulse current discharge capability of Zn O varistor ceramics by doping w ith Ga2O3[J].Ceramics International,2016,42(4):5582-5586.
[13]Meng P,Gu S,Wang J,et al.Improving electrical properties of multiple dopant Zn O varistor by doping with indium and gallium[J].Ceramics International,2017,44(1).
[14]Long W,Hu J,Liu J,et al.Effects of cobalt doping on the electrical characteristics of Al-doped Zn O varistors[J].Materials Letters,2010,64(9):1081-1084.
[15]段雷,许高杰,王永晔,等.Si O2掺杂量对氧化锌压敏电阻性能的影响[J].人工晶体学报,2009(s1):215-218.
[16]Kim J,Kimura T,Yamaguchi T.Microstructure development in Sb2O3-doped Zn O[J].Journal of Materials Science,1989,24(7):2581-2586.
[17]Ott J,Lorenz A,Harrer M,et al.The Influence of Bi2O3and Sb2O3on the Electrical Properties of Zn O-Based Varistors[J].Journal of Electroceramics,2001,6(2):135-146.
[18]李建英,胡楠.提高Zn O压敏电阻片能量耐受能力的方法与途径[J].电瓷避雷器,1998(2):33-39.
[19]Umaru D,Zakaria A,Abdullah C A C,et al.Effect of sintering temperature on V2O5doped Zn O-Bi2O3-Sb2O3-Mn O2based varistor ceramics:Microstructure and electrical properties[J].Digest Journal of Nanomaterials and Biostructures,2016,11(3):707-714.
[20]Shen J,Jiang S,Xu Y,et al.Boron and sodium codoped Zn O varistor w ith high stability of pulse currentsurge[J].Journal of Alloys&Compounds,2017,728:280.
[21]叶小健.低压高通流量Zn O压敏电阻的研究[D].武汉:华中科技大学,2015.