摘要
设计基于绝缘栅型场效应管(metal-oxide-semiconductor field-effect transistor,MOSFET)的快门脉冲发生器,将MOSFET串联作为开关组,采用电平移位法对其进行驱动,由可编辑逻辑器件FPGA控制延时触发,经过脉冲形成电路分别得到高压脉冲的快前沿与快后沿.结果表明,在1.1μF的负载下,可获得幅值为800 V、前后沿均小于1μs、脉宽为81μs的高压快脉冲,该系统抗干扰能力强,可靠性好.
A shutter pulse generator was designed,which is based on the metal oxide semiconductor field effect transistor(MOSFET).By using the N-channel level shifter for driving switch groups,which consist of Series MOSFETs and controlled by programmable logic device FPGA(field programmable gate array),a high-voltage pulse is achieved with high-speed front edge and back edge,after processing by pulse forming circuit.Experimental results showed that with a load of 1.1 μF the amplitude of pulse is 800 V and the width of pulse is 81 μs,both its front edge and back edge lasted less than 1 μs.The system is anti-jamming and reliable.
引文
[1]Li Jingzhen.Technology of time amplification on atomictime resolution[J].China Science Series E:Technologi-cal Sciences,2009,39(12):1887-1904.(in Chinese)李景镇.迈向原子时间分辨的时间放大技术[J].中国科学E辑:技术科学,2009,39(12):1887-1904.
[2]Pendley G J.High-speed imaging technology:yesterday,today&tomorrow[J].SPIE,2003,4948:101-103.
[3]Wang Chunlei,Li Jichao,Zhao Minglei.FerroelectricPhysical of Piezoelectric[M].Beijing:Science Press,2009:25-71.(in Chinese)王春雷,李吉超,赵明磊.压电铁电物理[M].北京:科学出版社,2009:25-71.
[4]Zhang Tao,Sun Lining,Cai Hegao.Study on the funda-mental characteristics of piezoelectric element[J].Op-tics and Precision Engineering,1998,6(5):36-32.(inChinese)张涛,孙立宁,蔡鹤皋.压电陶瓷基本特性研究[J].光学精密工程,1998,6(5):36-32.
[5]Chen Daren,Li Guorong,Yin Qingrui.Piezoelectric con-stants measured from converse piezoelectric effect and pie-zoelectric ceramic actuators[J].Journal of Inorganic Ma-terials,1997,12(6):861-866.(in Chinese)陈大任,李国荣,殷庆瑞.逆压电效应的压电常数和压电陶瓷微位移驱动器[J].无机材料学报,1997,12(6):861-866.
[6]Edward K K.Light Value:US3,2,997,922[P].1961-08-29.
[7]Cai Houzhi,Liu Jinyuan.Investigation and application ofultrafast pulse circuitry[J].Journal of Shenzhen Univer-sity Science and Engineering,2010,27(1):33-36.(inChinese)蔡厚智,刘进元.超快脉冲电路的研制及应用[J].深圳大学学报理工版,2010,27(1):33-36.
[8]Amitabh C,Kanad M,Oak S M.The principal of opera-tion of the avalanche transistor-based Marx bank circuit:anew perspective[J].Review of Scientific Instruments,1998,69(5):2166-2170.
[9]Wu Kan,Shao Chong,Li Xinwan.Research on thegeneration of negative high-voltage pulse using avalanchetransistor[J].Electronic Technology,2009,46(5):75-77.(in Chinese)吴侃,邵冲,李新碗.用雪崩三极管电路生成高压负脉冲技术研究[J].电子技术,2009,46(5):75-77.
[10]Hess H,Baker R J.Transformerless capacitive couplingof gate signals for series operation of power MOS devices[J].IEEE Transactions on Power Electronics,2000,15(5):923-930.
[11]Mentze E J,Hess H L,Buck K M,et a1.A scalablehigh-voltage output driver for low-voltage CMOS technolo-gies[J].IEEE Transactions on Very Large Scale Inte-gration(VLSI)Systems,2006,14(12):1347-1353.
[12]McEwan E.High voltage mosfet swtching circuit[P].U-nited States Patent 5332938,1994.
[13]Xu Jialong.High-speed Camera of the Rotating Mirror[M].Beijing:Science Press,1985:240-248.(in Chi-nese)许家隆.转镜式高速摄影[M].北京:科学出版社,1985:240-248.
[14]Jin Guofan,Li Jingzhen.Laser Surveying[M].Beijing:Science Press,1998:1054-1057.(in Chinese)金国藩,李景镇.激光测量学[M].北京:科学出版社,1998:1054-1057.
[15]Yang Haigang,Sun Jiabin,Wang Wei.An overview toFPGA device design technologies[J].Journal of Elec-tronics&Information Technology,2010,32(3):714-727.(in Chinese)杨海钢,孙嘉斌,王慰.FPGA器件设计技术发展综述[J].电子与信息学报,2010,32(3):714-727.
[16]Xia Yuwen.Digtial System Design Tutorial[M].Beijing:Bei Hang University Press,2008:183-245.(in Chinese)夏宇闻.Verilog数字系统设计教程[M].北京:北京航空航天大学出版社,2008:183-245.
[17]Niu Hanben.Optoelectronic techniques used in image in-formation acquisition[J].Journal of Shenzhen UniversityScience and Engineering,2001,18(3):75-87.(inChinese)牛憨笨.图像信息获取中的光电子技术[J].深圳大学学报理工版,2001,18(3):75-87.