石墨衬底上铝诱导法制备多晶硅薄膜
|
摘要
利用磁控溅射技术在石墨衬底上制备了石墨/a-Si/Al和石墨/Al/a-Si叠层结构,采用常规退火(CTA)和快速热退火(RTA)对样品进行退火,系统研究了不同退火条件对多晶硅薄膜制备的影响。利用X射线衍射(XRD),拉曼光谱(Raman)对制备的多晶硅薄膜进行表征,并利用谢乐公式计算了晶粒尺寸,结果表明制备的多晶硅薄膜具有高度(111)择优取向,结晶质量良好,利于后续外延制作多晶硅厚膜电池。基于实验结果,建立了铝诱导晶化模型,很好的解释了实验现象。
In this paper,graphite/a-Si/Al and graphite/Al/a-Si laminated structures were prepared on graphite substrate by magnetron sputtering,and systematically studied the effects of the samples annealed by conventional annealing( CTA) and rapid annealing( RTA). The poly-Si thin films were characterized by means of X-ray diffraction( XRD),Raman spectroscopy( Raman),and the grain size was calculated by the Scherrer formula,which show that the samples with strong preferred( 111) orientation and high crystallization quality are ideal for epitaxial growth poly-Si thick film cells. At the same time,we established the AIC model to explain the mechanism in the inverted AIC process.
In this paper,graphite/a-Si/Al and graphite/Al/a-Si laminated structures were prepared on graphite substrate by magnetron sputtering,and systematically studied the effects of the samples annealed by conventional annealing( CTA) and rapid annealing( RTA). The poly-Si thin films were characterized by means of X-ray diffraction( XRD),Raman spectroscopy( Raman),and the grain size was calculated by the Scherrer formula,which show that the samples with strong preferred( 111) orientation and high crystallization quality are ideal for epitaxial growth poly-Si thick film cells. At the same time,we established the AIC model to explain the mechanism in the inverted AIC process.
引文
[1]Widenborg P I,Aberle A G.Surface Morphology of Poly-Si Films Made by Aluminium-induced Crystallisation on Glass Substrates[J].Journal of Crystal Growth,2002,242(3):270-282.
[2]何海洋,陈诺夫,李宁,等.多晶硅薄膜太阳电池[J].微纳电子技术,2013,50(3):13-18+42.
[3]翟小利,谭瑞琴,戴世勋,等.铝诱导晶化制备多晶硅薄膜研究进展[J].材料导报,2012,26(21):148-152.
[4]Hoiaas I M,Kim D C,Weman H.Fabrication of Si(111)Crystalline Thin Film on Graphene by Aluminum-induced Crystallization[J].Applied Physics Letters,2016,108(16):1140.
[5]唐正霞,沈鸿烈,解尧,等.100μm大晶粒多晶硅薄膜的铝诱导法制备[J].功能材料,2010,41(3):453-456.
[6]Lee D W,Bhopal M F,Lee S H.Aluminum Induced Crystallization of Amorphous Silicon Dependent on Annealing Conditions with Graphite Plate[J].Electronic Materials Letters,2016,12(1):127-132.
[7]唐正霞.铝诱导多晶硅薄膜的制备、性能及生长机理研究[D].南京:南京航空航天大学,2010.
[8]焦栋茂,王新征,李洪涛,等.退火时间对铝诱导非晶硅薄膜晶化过程的影响[J].人工晶体学报,2011,40(2):370-373.
[9]Amin M S,Hozhabri N,Magnusson R.Effects of Solid Phase Crystallization by Rapid Thermal Annealing on the Optical Constants of Sputtered Amorphous Silicon Films[J].Thin Solid Films,2013,545(18):480-484.
[10]Huang S Y,Wang C C,Lin C L,et al.Mechanism of Aluminum Induced Lateral Crystallization of Amorphous Silicon[J].Japanese Journal of Applied Physics,2010,49(9):095601-095601-3.
[11]Zhang J M,Ma F,Xu K W.Calculation of the Surface Energy of FCC Metals with Modified Embedded-atom Method[J].Applied Surface Science,2004,229(7):1082-1090.
[2]何海洋,陈诺夫,李宁,等.多晶硅薄膜太阳电池[J].微纳电子技术,2013,50(3):13-18+42.
[3]翟小利,谭瑞琴,戴世勋,等.铝诱导晶化制备多晶硅薄膜研究进展[J].材料导报,2012,26(21):148-152.
[4]Hoiaas I M,Kim D C,Weman H.Fabrication of Si(111)Crystalline Thin Film on Graphene by Aluminum-induced Crystallization[J].Applied Physics Letters,2016,108(16):1140.
[5]唐正霞,沈鸿烈,解尧,等.100μm大晶粒多晶硅薄膜的铝诱导法制备[J].功能材料,2010,41(3):453-456.
[6]Lee D W,Bhopal M F,Lee S H.Aluminum Induced Crystallization of Amorphous Silicon Dependent on Annealing Conditions with Graphite Plate[J].Electronic Materials Letters,2016,12(1):127-132.
[7]唐正霞.铝诱导多晶硅薄膜的制备、性能及生长机理研究[D].南京:南京航空航天大学,2010.
[8]焦栋茂,王新征,李洪涛,等.退火时间对铝诱导非晶硅薄膜晶化过程的影响[J].人工晶体学报,2011,40(2):370-373.
[9]Amin M S,Hozhabri N,Magnusson R.Effects of Solid Phase Crystallization by Rapid Thermal Annealing on the Optical Constants of Sputtered Amorphous Silicon Films[J].Thin Solid Films,2013,545(18):480-484.
[10]Huang S Y,Wang C C,Lin C L,et al.Mechanism of Aluminum Induced Lateral Crystallization of Amorphous Silicon[J].Japanese Journal of Applied Physics,2010,49(9):095601-095601-3.
[11]Zhang J M,Ma F,Xu K W.Calculation of the Surface Energy of FCC Metals with Modified Embedded-atom Method[J].Applied Surface Science,2004,229(7):1082-1090.